Tokyo Electron Limited

Tokyo Electron Limi Ted

Kazuyoshi Yamazaki

Shintaro Aoyama

Tsuyoshi Takahashi

Masanobu Igeta

Takashi Kamio

Hiroshi Shinriki

Koji Akiyama

Naotaka Noro

Miyako Kaneko

Yasushi Fujii

Yu Nunoshige

Hiroaki Ashizawa

Tetsuya Saitou

Hideo Nakamura

Seokhyoung Hong

Kouji Shimomura

Naoshige Fushimi

Miki Aruga

An apparatus includes: a processing container; a stage provided inside the processing container to place a substrate thereon; a gas supply mechanism for supplying a processing gas into the processing container; and at least three ultraviolet light sources provided to irradiate the processing gas inside the processing container with ultraviolet rays. The ultraviolet light sources are provided to be offset from a rotation axis of the stage in a plan view, and are arranged in a light source arrangement direction with distances from the ultraviolet light sources to the rotation axis being different from one another. The ultraviolet light sources include first to third ultraviolet light source. The third ultraviolet light source is arranged such that distances L1, L2, and L3 from the first to third ultraviolet light sources, respectively, to the rotation axis in a plan view satisfies a relationship of L1&#x3c;L3&#x3c;L2.

Substrate processing apparatus and substrate processing method

A step of constantly supplying first and second carrier gases into a processing container having a substrate therein through first and second carrier gas flow paths, respectively, and supplying a source gas into the processing container through a source gas flow path, a step of purging the source gas by supplying a purge gas into the processing container through a purge gas flow path provided separately from the carrier gas, a step of supplying a reactant gas into the processing container through a reactant gas flow path, and a step of purging the reactant gas by supplying a purge gas into the processing container through the purge gas flow path are performed in a predetermined cycle. An additive gas having a predetermined function is supplied as at least a part of the purge gas in at least one of the purging steps.

Film forming method and film forming apparatus

A metal-containing film can be formed with high continuity with respect to a base when forming the metal-containing film on the base by CVD or ALD. A film forming method of forming, by ALD or CVD, a Ti-containing film on a base film of a processing target object having a SiOfilm as the base film includes performing a surface processing of accelerating formation of a silanol group on a surface of the SiOfilm by bringing a fluid containing O and H into contact with the surface of the SiOfilm; and performing a film forming processing of forming the Ti-containing film on the SiOfilm, on which the surface processing is performed, by the ALD or the CVD with a Ti source gas which reacts with the silanol group.

Film forming method, film forming system and surface processing method

There is provided a method for modifying a high-k dielectric thin film provided on the surface of an object using a metal organic compound material. The method includes a preparation process for providing the object with the high-k dielectric thin film formed on the surface thereof, and a modification process for applying UV rays to the highly dielectric thin film in an inert gas atmosphere while maintaining the object at a predetermined temperature to modify the high-k dielectric thin film. According to the above constitution, the carbon component can be eliminated from the high-k dielectric thin film, and the whole material can be thermally shrunk to improve the density, whereby the occurrence of defects can be prevented and the film density can be improved to enhance the specific permittivity and thus to provide a high level of electric properties.

Method for modifying high-k dielectric thin film and semiconductor device

A disclosed substrate processing method in a single wafer substrate processing device including a first process position for introducing nitrogen atoms to a high-dielectric film and a second process position for performing heat treatment on the high-dielectric film includes: successively conveying plural substrates to be processed to the first process position and the second process position one by one; and successively performing the introduction of nitrogen atoms and the heat treatment on the high-dielectric film on the substrates to be processed, wherein the treatment on the substrate to be processed is started within 30 seconds at the second process position after the process at the first position.

High-dielectric film substrate processing method

A film forming method for forming an oxide film on a surface of a substrate to be processed in a processing vessel at a predetermined processing temperature, wherein the method includes a temperature elevating step of elevating a temperature of said substrate to a predetermined processing temperature, the step of elevating the temperature including a step of holding the substrate in an atmosphere containing oxygen before the substrate reaches a temperature of 450&#xb0; C. The film forming method further comprises, after the step of elevating the temperature, a film forming step of forming a radical oxide film by irradiating the substrate surface with energy capable of exciting an oxygen gas.

Film forming method

A method to solve such a problem that plasma will not ignite in restarting operation of a processing container that has not been operated with the inside kept drawn to vacuum. Gas containing oxygen is passed in a processing container, and ultraviolet light is irradiated to the gas while gas inside the processing containeris being discharged. After that, a remote plasma sourceis driven to ignite plasma.

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Nirasaki, Japan

Kazuyoshi Yamazaki