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Kazuo Tsubouchi

Kazuyoshi Sugai

Nobuo Mikoshiba

Tomohiko Shibata

Hiroaki Sasaki

Kazuma Soeta

A spectrum diffusion signal including data representing a center frequency of an acoustic surface filter in a transmitter side is transmitted with its carrier-frequency being swept. When a receiver side receives a modulation signal, a spectrum diffusion signal including data representing a center frequency of an acoustic surface filter in a receiver side is transmitted on the carrier-frequency equal to the center frequency of the surface acoustic wave matched filter in the transmitter side included in the modulation signal. Thereafter, the transmitter side transmits spectrum diffusion signals having the carrier-frequency equal to the center frequency of the surface acoustic wave matched filter in the receiver side included in the modulation signal.

Communication system using a surface acoustic wave-matched filter

An acoustic surface wave device includes a substrate made of an elastic material, a multilayer structure disposed on a surface of the substrate and having a silicon dioxide layer and an aluminum nitride layer superimposed on each other, and electrodes having predetermined configurations formed on the multilayer structure. The main component of the elastic material is a silicon monocrystal, whose temperature coefficient of delay time for acoustic surface waves is positive, and the piezo-electric axis of the aluminum nitride is either perpendicular or parallel to the surface of the substrate, with a negative delay coefficient, counteracting that of the substrate.

Multi-layer acoustic surface wave device having minimal delay time

A surface acoustic wave device comprises an elastic substrate having a major surface with a given crystal orientation and having a positive temperature coefficient of delay (TCD), and AlN film deposited on the elastic substrate so that piezoelectric axis of the AlN film has a predetermined direction with respect to the major surface of the elastic substrate having a negative TCD, and electrodes provided on the AlN film or between the elastic substrate and the AlN film.

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Sendai, Japan

Kazuyoshi Sugai