Fuji Electric Co., Ltd.

Kazuyoshi Shibata

Harutaka Taniguchi

Tomoyuki Kawashima

Hisato Kato

Hisato Katou

Shin'ichi Nakamata

Shinichi Nakamata

An electroluminescent display device with decreased voltage requirements comprises a substrate having a major surface, a first electrode over the major surface, a light-emitting film over the first electrode, and a second electrode over the light-emitting film. At least one insulating film is disposed in contact with a major surface of the light-emitting film, which insulating film has a columnar crystal structure oriented parallel to an electric field formed between the two electrodes.

Electroluminescent display device including a columnar crystal structure

A method of making electroluminescence emitting films each containing sulfide such as Sr, Ca, etc. as a base material and a rare earth element such as Ce, Eu, Pr, etc. as an emitting center by sputtering method, so that the electroluminescence emitting film can produce with high luminance and with various emission light colors. In the method, an element such as Sr to be sulfidized for a base material is used as a target. A sputtering gas such as Argon to be supplied to a sputtering apparatus is mixed with an H.sub.2 S gas as a base material sulfur compound. A rare earth element compound such as tris-cyclopentadienyl-cerium for an emitting center is gasified by a gas generator while being heated under supply of a carrier gas such as Ar, so that the gasified rare earth element compound is added to the sputtering gas. In the above-mentioned condition, an electroluminescence emitting film is produced on a display panel by a high frequency sputtering method in a sputtering atmosphere of the sputtering gas containing sulfur for the base material and a rare earth element for the emitting center.

Method of producing electroluminescence emitting film

An electroluminescent display device with decreased voltage requirements comprises:

Electroluminescent display device and method of manufacturing same

A method for manufacturing a thin-film EL device utilizes a Zn-Mn target that contains less Mn than the optimum Mn concentration on the basis of the finding that the light-emitting layer grown by the sputtering method contains more Mn than in the target. Manganese concentration on the target surface layer is controlled by changing the area ratio between ZnS and Mn exposed on the surface of the target. Manganese concentration on the target surface is controlled at preferably from 0.3 to 0.4 wt % when the target surface is sulfurized during sputtering and less than 0.1 wt % when the target surface is not sulfurized.

Method for manufacturing thin-film EL device

A light-emitting layer is prepared by using sputtering gas containing H.sub.2 S gas at a concentration greater than 20% by volume, and by sputtering a target under the optimal electric discharge power corresponding to the concentration of H.sub.2 S gas. A light-emitting layer having good light-emitting characteristics is obtained under a high film-forming rate.

Method for preparing thin film electro-luminescence element

A method of making electroluminescence emitting films each containing sulfide such as Sr, Ca, etc. as a base material and a rare earth element such as Ce, Eu, Pr, etc. as an emitting center by sputtering method, so that the electroluminescence emitting film can produce with high luminance and with various emission light colors. In the method, an element such as Sr to be sulfidized for a base material is used as a target. A sputtering gas such as Argon to be supplied to a sputtering apparatus is mixed with an H.sub.2 S gas as a base material sulfur compound. A rare earth element compound such as tris-cyclopentadienyl-cerium for an emitting center is gasified by a gas generator while being heated under supply of a carrier gas such as Ar, so that the gasified rare earth element compound is added to the sputtering gas. In the abovementioned condition, an electroluminescence emitting film is produced on a display panel by a high frequency sputtering method in a sputtering atmosphere of the sputtering gas containing sulfur for the base material and a rare earth element for the emitting center.

The present invention reduces weak points in the insulation films of electro-luminescence (EL) panels by constructing, at least the lower part of the insulating film, as a coated film comprising an insulator in film form created by coating a fluidic material in an EL indicating panel which includes a light emitting film disposed between a lower electrode film and an upper electrode film, and insulation films disposed in a way that will make contact with the light emitting film; and further by forming the contours of the light emitting film parts larger than the area in which the lower and upper electrode films intersect with each other in an EL indicating panel in which the light emitting film is divided into many light emitting film parts.

Electro-luminescence indicating panel and method of manufacture

During manufacture of electroluminescent elements, layers of material are deposited upon a substrate as it is moving in a vacuum chamber beneath masks that shield the terminal regions of transparent electrodes formed upon the substrate. The masks are arranged so as to not contact the substrate, and are placed between the layer-forming material source. First insulation films, the light-emitting layers, or the second insulation films, or combinations thereof may be deposited using the method.

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Yokohama, Japan

Kazuyoshi Shibata