Nippon Steel Corporation

Kazuyoshi Sai

Kazuo Yamamoto

Koichi Kitamura

Hidenori Mimura

Yasumitsu Ohta

Tamio Saito

Youichi Nagatake

Kazuhiko Kawamura

Noboru Otani

A contact type image sensor including a plurality of photodiodes for converting a light signal into an electric signal according to the intensity of the light and a plurality of blocking diodes, arranged in either a back-to-back or a front-to-front connection with the photodiodes, for functioning as switching elements to have the information stored on the photodiodes read out, and adapted to be driven by a matrix drive system. For a back-to-back connection of the blocking diodes and photodiodes, a control circuit maintains the potential difference between cathodes of the photodiodes at zero volts at all times. Similarly, for a front-to-front connection of the blocking diodes and photodiodes, a control/drive circuit maintains the potential difference between the anodes of the photodiodes at zero volts at all times. Since the potential difference between the cathodes (for the back-to-back connection) or anodes (for the front-to-front connection) of all of the photodiodes is always maintained at zero volts, crosstalk at crossover portions between output lines connected to the photodiodes is reduced.

Contact type image sensor

A complete-contact type image sensor includes matrix-driven sensor elements arranged on a light transmitting substrate. Both input contact members connected with the sensor elements at their input side and output contact members connected with the sensor elements at their output side are formed at one same side on the light transmitting substrate. By virtue of this arrangement, the sensor elements and an original are brought into close contact, thereby improving the MTF (Modulation Transfer Function) and reducing the width of the light transmitting substrate.

Complete-contact type image sensor

A full contact image sensor device comprising sensor elements adapted to macroscopically touch a document to receive reflected light from the document and to generate electric signals in response thereto, wherein a receiving surface of each sensor element has an uneven contour and the device wherein each sensor element corresponding to a pixel comprises a plurality of sensor element blocks is proposed. The devices are easily manufactured and have excellent MTF and sensitivity.

Full contact image sensor device with light blocking means

A complete close-contact type image sensor which comes into contact with an original and reads information from the original and which includes a sensor element for photoelectro conversion of a light signal reflected from the original and electronic parts such as a driven unit for driving the sensor element and taking out an electric signal stored in the sensor element, the image sensor being characterized in that the electronic parts such as the driving unit are disposed inside a plane including the surface of contact with the original. According to the above construction of the present invention, since the electronic parts, including the driving unit, are disposed inside the plane which includes the surface of contact with the original, the path of transfer of the original can be made rectilinear to stabilize the feed of the original without enlarging the gap between the sensor element and the original.

Complete close-contact type image sensor

An image sensor device having a plurality of sensor elements connected in a matrix is driven by sequentially applying successive driving pulses, wherein a leading edge of a driving pulse coincides with a trailing edge of a preceding driving pulse and the slew rate at the leading edge is equal to the slew rate at the trailing edge.

Method and apparatus for driving image sensor device

A pin diode having an incident layer which includes 1 to 10% of microcrystallized silicon is formed in a condition where a molar ratio of hydrogen to monosilane is 5:1 to 100:1 and applied power is 0.001 to 0.05 W/cm.sup.2. The pin diode as well as a contact image sensor comprising the same as excellent photoelectric transfer efficiency.

Diode and producing method thereof and contact image sensor device

A contact type image sensor device comprises a plurality of photodiodes connected in a matrix, and an equal number of blocking diodes. A capacity ratio of a photo electric part constituting the photodiodes to a diode part constituting the blocking diode is in the range of 2:1 to 30:1. Dynamic range, magnitude of the signal current, light sensitivity and after image characteristics of the image sensor are improved according to the invention.

Growing community of inventors

Kawasaki, Japan

Kazuyoshi Sai