Flosfia Inc.

Kazuyoshi Norimatsu

Takashi Shinohe

Isao Takahashi

Mitsuru Okigawa

Koji Amazutsumi

Osamu Imafuji

Yuji Kato

Ryohei Kanno

Provided is a semiconductor device including: at least a semiconductor layer having a corundum structure, the semiconductor layer including a first surface having at least a first side and a second side shorter than the first side, the first surface being a c-plane or an m-plane, a direction of the first side being a direction of a c-axis or a direction of an m-axis.

Semiconductor device

A crystal that is useful for semiconductor element and a semiconductor element that has enhanced electrical properties are provided. A crystal, including: a corundum structured crystalline oxide, the crystalline oxide including gallium and/or indium, and the crystalline oxide further including a metal of Group 4 of the periodic table. The crystal is used to make a semiconductor element, and the obtained semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.

Crystal, semiconductor element and semiconductor device

Growing community of inventors

Kyoto, Japan

Kazuyoshi Norimatsu