Fuji Photo Film Company, Limited

Fujifilm Corporation

Kazuyoshi Mizutani

Shinichi Kanna

Shoichiro Yasunami

Tomoya Sasaki

Toshiaki Aoai

Toru Tsuchihashi

Shinji Tarutani

Shinichi Sugiyama

Shuji Hirano

Kaoru Iwato

Kunihiko Kodama

Kana Fujii

Hyou Takahashi

Jiro Yokoyama

Hideaki Tsubaki

Wataru Hoshino

Kenji Wada

Keita Kato

Yuichiro Enomoto

Shohei Kataoka

Sou Kamimura

Fumikazu Kobayashi

Makoto Momota

Kenichiro Sato

Toru Fujimori

Masaomi Makino

Koji Shirakawa

Hiroshi Yoshimoto

Hiromi Kanda

Shiro Tan

Ichiro Koyama

Yu Iwai

Keitaro Aoshima

Haruki Inabe

Kazuo Maemoto

Akira Nagashima

Yasutomo Kawanishi

Yoshitaka Kamochi

Takamitsu Tomiga

Provided is a method of forming a pattern, ensuring excellent sensitivity, limiting resolving power, roughness characteristic, exposure latitude (EL), dependence on post-exposure bake (PEB) temperature and focus latitude (depth of focus DOF), and a resist composition for use in the method. The method comprises (A) forming a film from a resist composition comprising a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, which resin thus when acted on by an acid decreases its solubility in a developer containing an organic solvent, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent.

Pattern forming method and resist composition

Provided are a laminate which is capable of forming an excellent organic semiconductor pattern, a kit for manufacturing an organic semiconductor, which is used to manufacture such a laminate, and a resist composition for manufacturing an organic semiconductor, which is used for the kit for manufacturing an organic semiconductor. The laminate includes an organic semiconductor film, a protective film on the organic semiconductor film, and a resist film on the protective film, in which the resist film is formed of a photosensitive resin composition that contains a photoacid generator (A) which generates an organic acid of which a pKa of the generated acid is &#x2212;1 or less and a resin (B) which reacts with an acid generated by the photoacid generator so that the rate of dissolution in a developer containing an organic solvent is decreased.

Laminate, kit for manufacturing organic semiconductor, and resist composition for manufacturing organic semiconductor

Provided is an actinic-ray- or radiation-sensitive resin composition and a method of forming a pattern using the same, ensuring excellent the etching resistivity and the stability during a post-exposure delay (PED) period. The composition contains a resin containing a repeating unit containing a group that is decomposed when acted on by an acid to thereby produce an alcoholic hydroxyl group, and a compound that generates an acid of pKa&#x2267;&#x2212;1.5 when exposed to actinic rays or radiation.

Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the same

Provided is a method of forming a pattern, ensuring excellent exposure latitude (EL) and focus latitude (depth of focus DOF). The method of forming a pattern includes (A) forming a film from a resist composition, the resist composition, (B) exposing the film to light, and (C) developing the exposed film using a developer containing an organic solvent, thereby forming a negative pattern. The resist composition contains (a) a resin that is configured to decompose when acted on by an acid and &#x394;SP thereof represented by formula (1) below is 2.5 (MPa)or above, (b) a compound that is composed to generate an acid when exposed to actinic rays or radiation, and (c) a solvent.&#x394;SP=SP&#x2212;SP&#x2003;&#x2003;(1)

A resist composition and a pattern forming method using the composition are provided, the resist composition including: (A) a resin that decomposes by an action of an acid to increase a solubility of the resin (A) in an alkali developer; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a compound represented by formula (C1); and (D) a solvent: 

Resist composition and pattern forming method using the same

A pattern forming method comprising a step of applying a resist composition whose solubility in a negative tone developer decreases upon irradiation with an actinic ray or radiation and which contains a resin having an alicyclic hydrocarbon structure and a dispersity of 1.7 or less and being capable of increasing the polarity by the action of an acid, an exposure step, and a development step using a negative tone developer; a resist composition for use in the method; and a developer and a rinsing solution for use in the method, are provided, whereby a pattern with reduced line edge roughness and high dimensional uniformity can be formed.

Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method

According to one embodiment, an actinic ray-sensitive or radiation-sensitive resin composition includes (A) a resin containing the repeating units of formulae (I), (II) and (III) that when acted on by an acid, becomes soluble in an alkali developer, and (B) a compound that when irradiated with actinic rays or radiation, generates a fluorine-containing acid, wherein each of Rindependently represents a hydrogen atom or an optionally substituted methyl group, Rrepresents a halogen atom, an optionally substituted alkyl group, an optionally substituted cycloalkyl group, an optionally substituted aryl group or an optionally substituted aralkyl group, and n is an integer of 0 to 5, provided that when n is 2 or greater, multiple Rs may be identical to or different from each other.

Actinic ray-sensitive or radiation-sensitive resin composition and method of forming pattern therewith

A positive resist composition, includes: (B1) a resin capable of decomposing under an action of an acid to increase a solubility of the resin (B1) in an aqueous alkali solution, the resin (B1) containing a specific hydroxystyrene-based repeating unit and/or (meth)acrylic acid-based repeating unit as defined in the specification; (B2) a resin capable of decomposing under an action of an acid to increase a solubility of the resin (B2) in an aqueous alkali solution, the resin (B2) containing a specific hydroxystyrene-based repeating unit and/or (meth)acrylic acid-based repeating unit as defined in the specification and containing a specific aromatic ring structure-containing repeating unit as defined in the specification; and (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, and a pattern forming method uses the composition.

Positive resist composition and pattern forming method using the same

A positive resist composition, includes: (A) a resin having a repeating unit represented by formula (A) as defined in the specification, which decomposes under an action of an acid to increase a solubility of the resin (A) in an alkali developer; and a pattern forming method uses the composition.

Provided is a resist composition including a compound having a molecular weight of 1,000 or less and containing at least one sulfonamide group (&#x2014;SONH&#x2014;).

A pattern forming method includes (a) coating a substrate with a resist composition including a resin that includes a repeating unit represented by a following general formula (NGH-1), and, by the action of an acid, increases the polarity and decreases the solubility in a negative developing solution; (b) exposing; and (d) developing with a negative developing solution: wherein Rrepresents a hydrogen atom or an alkyl group; and Rto Reach independently represents a hydrogen atom or a hydroxyl group, provided that at least one of Rto Rrepresents a hydroxyl group.

Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method

A resist composition includes (A) a resin including: a repeating unit capable of decomposing by the action of an acid to increase solubility in an alkali developing solution and represented by formula (I), and a repeating unit represented by formula (II); and (B) a compound capable of generating an acid upon irradiation with actinic ray or radiation: wherein A represents a hydrogen atom, an alkyl group, a hydroxyl group, an alkoxyl group, a halogen atom, a cyano group, a nitro group, an acyl group, an acyloxy group, a cycloalkyl group, an aryl group, a carboxyl group, an alkyloxycarbonyl group, an alkylcarbonyloxy group, or an aralkyl group; Ra represents a group containing a group capable of decomposing by the action of an acid; Rb represents an alkylene group, a cycloalkylene group, or a group of combining these groups; Y represents a heterocyclic group; and m represents 0 or 1.

Resist composition and pattern-forming method using the same

A positive resist composition comprising (A) a resin which contains all of the repeating units represented by formulae (I) to (III), and becomes soluble in an alkali developer by the action of an acid, and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and a pattern forming method using the composition. A represents a group capable of decomposing and leaving by the action of an acid, each Rindependently represents hydrogen or a methyl group, Rrepresents a phenyl group or a cyclohexyl group, m represents 1 or 2, and n represents an integer of 0 to 2. By virtue of this construction, a resist composition ensuring high resolution, good pattern profile, sufficient depth of focus, little defects after development, and sufficiently high plasma etching resistance is provided. 

A resist composition, which comprises: (A) a resin containing a repeating unit represented by formula (I); and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation:  wherein AR represents a benzene ring or a naphthalene ring; R represents a hydrogen atom, an alkyl group, a cycloalkyl group or an aryl group; Z represents a linking group for forming a ring together with AR; and A represents an atom or group selected from the group consisting of a hydrogen atom, an alkyl group, a halogen atom, a cyano group and an alkyloxycarbonyl group, and a pattern forming method using the resist composition.

Growing community of inventors

Shizuoka, Japan

Kazuyoshi Mizutani