Lintec Corporation

Fsk Kabushiki Kaisha

Other

Texas Instruments Japan Limited

Kazuyoshi Ebe

Hayato Noguchi

Takanori Saito

Katsuhisa Taguchi

Osamu Yamazaki

Mikio Komiyama

Masazumi Amagai

Yoshihisa Mineura

Yasunao Miyazawa

Hiroaki Narita

Yoshitaka Akeda

Kazuhiro Takahashi

Hideo Senoo

Norito Umehara

Mamoru Kobayashi

Hideki Numazawa

Toshio Minagawa

Kouichi Nagamoto

Koichi Nagamoto

Yuichi Iwakata

Shin Kubota

Kazumi Itou

Takeshi Kondoh

Hiroshi Koike

Akira Nozaki

Takeshi Ikeda

Shinya Takyu

A semiconductor device, which is obtained by sticking an adhesive sheetcomprising a base materialan adhesive agent layerformed on the base materialand conductor bodiesburied in the adhesive agent layerto a semiconductor wafer, and removing the base material from the adhesive agent layer of the adhesive sheet. The adhesive agent layerand a substrate are then aligned and the semiconductor wafer and the substrate are adhered via the adhesive agent layerto avoid defects caused by fluidity of an under filling material.

Method for manufacturing semiconductor device using adhesive sheet with embedded conductor bodies

A semiconductor device, which is obtained by sticking an adhesive sheetcomprising a base material, an adhesive agent layerformed on the base materialand conductor bodiesburied in the adhesive agent layerto a semiconductor wafer, and removing the base material from the adhesive agent layer of the adhesive sheet. The adhesive agent layerand a substrate are then aligned and the semiconductor wafer and the substrates are adhered via the adhesive agent layerto thereby avoid defects caused by fluidity of an under filling material.

Semiconductor device adhesive sheet with conductor bodies buried therein

A semiconductor integrated circuit is adhered to the substrate and includes semiconductor integrated circuit electrodes. A hardened adhesive agent layer is formed from an adhesive agent with gradable adhesiveness and has conductor bodies buried therein. The adhesive agent includes a (meth)acrylate copolymer having a weight-average molecular weight of not less than 30,000, an epoxy resin having a weight-average molecular weight of 100 to 10,000, a photopolymerizable low molecular compound and thermal activation latent epoxy resin curing agent. The conductor bodies are connected with the semiconductor integrated circuit electrodes, and the adhesive agent layer is aligned with the substrate so that the conductor bodies buried in the adhesive agent layer and the substrate electrodes are electrically connected.

Semiconductor device including adhesive agent layer with embedded conductor bodies

A resin tie barA is formed from a base materialof a heat-resistant resin whose melting point is higher than the temperature during resin molding and an insulative adhesive layeron the base materialand formed from an insulative adhesive agent that may or may not be removable prior to resin molding depending upon its composition. The resin tie barA is applied to the surface of the leadsof a lead frame, and resin molding is then performed, during which the resin tie barA is pressed by a heated moldwhich softens the insulative adhesive agent of the resin tie barA and pushes it into the gapsbetween the leadsof the lead frame. Thus the resin tie barA can be easily formed into a shape that is favorable for the leadsof the lead frame.

Tape for forming resin tie bar, resin tie bar, lead frame equipped with resin tie bar, resin-molded semiconductor device, and method for producing same

Disclosed herein is a pressure sensitive adhesive sheet for fixing a semiconductor wafer during semiconductor wafer processing in vacuum, comprising a substrate and, superimposed on one side or both sides thereof, a layer of ultraviolet curable pressure sensitive adhesive composition comprising an ultraviolet curable copolymer having ultraviolet polymerizable groups as side chains and a phosphorous photopolymerization initiator. The pressure sensitive adhesive sheet for semiconductor wafer processing, even in the processing of a semiconductor wafer in vacuum, is free from generating gases from the pressure sensitive adhesive sheet, thereby avoiding wafer deformation attributed to evaporated gas components and adhesive transfer caused thereby.

Pressure sensitive adhesive sheet for semiconductor wafer processing

A method of processing a semiconductor wafer. The wafer is secured to a wafer supporting member having a data carrier. Information required for working the semiconductor wafer is input to the data carrier. The wafer is then worked according to information read from the data carrier. The data carrier is configured to permit operations such as back grinding, dicing and pickup of the wafer, and prevents wafer breakage when the wafer is carried between different operations.

Method of processing semiconductor wafer and semiconductor wafer supporting member

Process for producing a chip

A surface protective sheet for semiconductor wafer, used in wafer back grinding during a process comprising (1) forming grooves on the surface a of semiconductor wafer furnished with a circuit so that the cutting depth of the grooves are smaller than the thickness of the wafer and (2) grinding the back of the wafer so that the thickness of the wafer is reduced and that the wafer is finally divided into individual chips. The above surface protective sheet is comprised of a substrate and, superimposed thereon, a pressure sensitive adhesive layer having an elastic modulus of at least 1.0&times;10 Pa at 40&deg; C. This surface protective sheet is applicable to a process which enables producing extremely thin IC chips with high yield.

Method for grinding a wafer back

A process for producing semiconductor chips, comprising the following steps. A semiconductor wafer having a surface overlaid with circuits is provided. An arrangement wherein a back of the semiconductor wafer is fixed on a dicing tape and wherein a pressure sensitive adhesive double coated sheet is stuck to a circuit surface of the semiconductor wafer is formed. The pressure sensitive adhesive double coated sheet comprises a shrinkable base having its both sides overlaid with pressure sensitive adhesive layers. At least one of the layers is composed of an energy radiation curable pressure sensitive adhesive. The semiconductor wafer together with the pressure sensitive adhesive double coated sheet is diced by each circuit to thereby form semiconductor chips. The semiconductor chips are fixed on a transparent hard plate by adherence of the pressure sensitive adhesive layer of the pressure sensitive adhesive double coated sheet remote from the semiconductor chips. The dicing tape is stripped from the semiconductor chips. The pressure sensitive adhesive double coated sheet, on its transparent hard plate side, is irradiated with energy radiation. The shrink base of the pressure sensitive adhesive double coated sheet is shrunk, and the semiconductor chips are picked up. In the working of a semiconductor wafer into extremely reduced thickness, semiconductor chips can be produced with high yield without suffering from damaging of semiconductor chips such as chip splitting or cracking.

Process for producing semiconductor chip

Disclosed herein is a pressure sensitive adhesive double coated sheet comprising a shrink substrate and, superimposed on both sides thereof, pressure sensitive adhesive layers, at least one of the pressure sensitive adhesive layers being composed of an energy radiation curable pressure sensitive adhesive. The pressure sensitive adhesive double coated sheet according to the invention enables efficiently processing a work piece with high precision. In particular the pressure sensitive adhesive double coated sheet is suitable to a process capable of producing IC chips of high thickness precision with high yield by reducing warpage and minimizing carrying breakage in the grinding of extremely thin or large diameter silicon wafers and capable of performing back grinding and dicing in the same configuration. Further, the invention provides a process of producing semiconductors of high reliability in which the above pressure sensitive adhesive double coated sheet is used.

Method of using pressure sensitive adhesive double coated sheet

Pressure sensitive adhesive sheet for producing a chip

Disclosed is a process for preparing a semiconductor device comprising the steps of adhering a back surface of a wafer, a front surface of which has been formed a circuit, onto the radiation curable adhesive layer, dicing the wafer into chips, rinsing, drying, irradiating the adhesive layer with radiation to cure said adhesive layer, expanding the adhesive sheet if necessary to make the chips apart from each other, then picking up the chips, mounting the picked chips on a lead frame, bonding, and molding to give such a structure that the back surfaces of the chips are partially or wholly in contact with a package molding resin, wherein the radiation curable adhesive layer comprises 100 parts by weight of an acrylic adhesive composed of a copolymer of an acrylic ester and an OH group-containing polymerizable monomer and 50-200 parts by weight of a radiation polymerizable compound having two or more unsaturated bonds, and the radiation curable adhesive layer has an elastic modulus of not less than 1&times;10,dyn/cm,after curing by irradiation with radiation.

Process for preparing a semiconductor wafer

Process for producing chip and pressure sensitive adhesive sheet for said process

Cover tape for chip transportation and sealed structure

A layer of base material has a film layer and a barrier layer on the film layer, and also adhesive tape has the base material and an adhesive layer on the barrier layer. Thus, they do not have any fish-eye or foreign substance on their surfaces, so that accuracy in thickness are improved and contamination of a material to be adhered with the adhesive layer is also improved.

Base material and adhesive tape using the same

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Shiraoka-machi, Japan

Kazuyoshi Ebe