Az Electronic Materials USA Corp.

Kazuyo Ono

Hatsuyuki Tanaka

Yusuke Takano

Satoru Funato

A method of forming resist patterns comprises the steps of (a) applying and forming a chemically amplified photoresist film, (b) applying a treating agent with a pH value of 1.3 to 4.5 onto said chemically amplified photoresist film, (c) baking said chemically amplified photoresist film after at least one of the steps of applying and forming said chemically amplified photoresist film and applying said treating agent, (d) selectively exposing said chemically amplified photoresist film, (e) post exposure-baking said chemically amplified photoresist film, and (f) developing said chemically amplified photoresist film, wherein the contact angle of a non-exposed portion of said chemically amplified photoresist film to a developing solution after wash with water to remove the treating agent on the photoresist and spin-drying before development is made lower by 10&#xb0; to 110&#xb0; than that in the case where said treating agent is not applied. In this method, the wetting property of the developing solution to the photoresist film are improved and the influence of floating basic species are reduced by the action of an acid component such as organic acid contained in the treating agent to form resist patterns with good shape.

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Tokyo, Japan

Kazuyo Ono