Kabushiki Kaisha Toshiba

Toshiba Energy Systems & Solutions Corporation

Toshiba Infrastructure Systems & Solutions Corporation

Kazuyasu Takimoto

Hiroshi Mochikawa

Hiromichi Tai

Yosuke Nakazawa

Naotake Watanabe

Atsuhiko Kuzumaki

Hiroki Sekiya

Nobumitsu Tada

Daisuke Hiratsuka

Hitoshi Matsumura

Yuuji Hisazato

Hiroaki Ito

Naotaka Iio

Akihisa Matsushita

Yuta Ichikura

Toshiharu Ohbu

Naoki Yamanari

According to an embodiment, a semiconductor device includes a first metal plate, a second metal plate, and two or more semiconductor units. The two or more semiconductor units are disposed on the first metal plate. The each of the two or more semiconductor units includes a first metal member, a second metal member, and a semiconductor element. The first metal member has a first connection surface connected to the first major surface. The second metal member has a second connection surface connected to the second major surface. The semiconductor element includes an active region having surfaces respectively opposing the first connection surface and the second connection surface. A surface area of the first connection surface is greater than a surface area of the surface of the active region opposing the first connection surface. A surface area of the second connection surface is greater than a surface area of the surface of the active region opposing the second connection surface.

Semiconductor device

According to one embodiment, a semiconductor switch includes a main element including a switching element and an antiparallel diode, and a reverse voltage application circuit. The reverse voltage application circuit includes an auxiliary electric-power supply, a high-speed free wheeling diode, an auxiliary element, and a capacitor. The high-speed free wheeling diode comprises a plurality of diodes connected in series.

Semiconductor switch having reverse voltage application circuit and power supply device including the same

According to one embodiment, a semiconductor switch includes a first element that includes a switching element and an anti-parallel diode. The switching element has a breakdown voltage and is coupled to a control terminal and second and third terminals. The semiconductor switch further includes a second element having a breakdown voltage lower than that of the first element. The second element is coupled to a control terminal and second and third terminals. The semiconductor switch also includes a flyback diode having a breakdown voltage substantially similar to that of the first element. A negative electrode of the first element is connected to a negative electrode of the second element and the flyback diode is connected in parallel between a positive terminal of the first element and a positive terminal of the second element. The control terminal for the first element and the control terminal for the second element are coupled to one or more control circuits independently of each other.

Semiconductor switching system

Growing community of inventors

Fuchu, Japan

Kazuyasu Takimoto