Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Renesas Electronics Corporation

Kazuyasu Nishikawa

Hiroki Ootera

Yuji Kawano

Masakazu Taki

Kenji Shintani

Shinnosuke Soda

Tatsuo Oomori

Yoshinori Yokoyama

Jun Tomisawa

Akira Inoue

Jun Fujita

Yoshitsugu Yamamoto

Tsuyoshi Kawakami

Hiroshi Kobayashi

Yoshinori Tatenuma

Hideki Shimauchi

Manabu Tsukamoto

Yoichi Nogami

Kenichi Morokuma

Akihisa Fukumoto

Kazuyo Endo

Akihiko Furukawa

Naruhisa Miura

Masahiro Yokotani

Masayuki Imaizumi

Toshiaki Shinohara

Takashi Tokunaga

Yasuhiro Kagawa

Taisuke Furukawa

Kei Yamamoto

Tetsuya Uchida

Yasushi Hashizume

Tetsu Negishi

Mutumi Tuda

Narihito Ota

Shingo Tomohisa

A power module includes an insulated circuit board, a semiconductor element, a first buffer plate, and first and second joining materials. The semiconductor element is disposed on a side of one main surface of the insulated circuit board. The first buffer plate is disposed between the insulated circuit board and the semiconductor element. The first joining material is divided into a plurality of portions in a plan view. The first buffer plate is higher in coefficient of linear expansion than the semiconductor element and lower in coefficient of linear expansion than the insulated circuit board. The first buffer plate is lower in Young's modulus than the semiconductor element.

Power module

A power module includes a power semiconductor element, an interconnection material, a circuit board, an external terminal, a joining material, and a sealing resin. A clearance portion is continuously formed between the sealing resin and each of an end surface of the joining material and a surface of the interconnection material so as to extend from the end surface of the joining material to the surface of the interconnection material, the end surface of the joining material being located between the power semiconductor element and the interconnection material, the surface of the interconnection material being located between the end surface and a predetermined position of the interconnection material separated by a distance from the end surface.

A plurality of semiconductor element is formed on a substrate. A plurality of sealing windows and a support portion supporting the plurality of sealing windows are formed on a SOI substrate. The SOI substrate is pressured against the substrate by using a pressurizing member and the plurality of sealing windows of the SOI substrate is bonded to the substrate via a low melting point glass member arranged around the plurality of semiconductor elements. The support portion is separated from the plurality of sealing windows bonded to the substrate.

Method for manufacturing semiconductor device

A signal transmission circuit includes, in each of a first circuit connected to a first coil of an insulating transformer and a second circuit connected to a second coil of the insulating transformer, a transmitting circuit, a receiving circuit, a coil-side switching circuit, an input/output-side switching circuit, an abnormality detection circuit, a delay circuit, and a direction control section. In the signal transmission circuit, the direction control section controls the switching circuit to switch a signal direction between input and output, and the switching circuit switches between transmission and reception. The delay circuit delays a received signal and returns the resultant signal to the transmitting side, and the abnormality detection circuit detects abnormality to perform self-diagnosis.

Signal transmission circuit and power conversion device equipped with same

A transmitter circuit feeds to a transmitter coil, every time transmission data changes in logical value, a current signal in pulse form having a positive or negative polarity that is alternately inverted in response to each change in logical value; and a receiver circuit inputs induction voltage signals each being double pulses having both positive and negative polarities, which have been induced in a receiver coil by the current signal fed to the transmitter coil, to demodulate the transmission data. The receiver circuit includes: an amplifier that amplifies the induction voltage signals of double pulses induced in the receiver coil; and a signal generating unit that, when detecting first single pulses in the induction voltage signals of double pulses amplified by the amplifier, sets up an insensitive period for second single pulses therein, to generate an output signal corresponding to the transmission data, based solely on the first single pulses.

Signal transmitting circuit

A differential amplifier generates an offset correction signal based on a rotation detection signal from a rotation detector apparatus and an offset signal. A comparator compares the offset correction signal with a threshold voltage, and outputs a binarized signal representing the comparison result. An average value signal generator circuit generates an average value signal representing the average value of the offset correction signal. The offset signal generator circuit generates the offset signal so that the signal voltage of the average value signal has a voltage value between a threshold voltage and a threshold voltage.

Binarization circuit for binarizing detection signal representing rotation or movement of object

A magnetic position detection apparatus includes a substrate, a magnet, a bridge circuit including first through fourth magneto-electric converting elements formed on the substrate, and a detection circuit. A substrate surface is substantially perpendicular to a magnet magnetization direction. The second and third magneto-electric converting elements are, when viewed along the magnet magnetization direction, disposed to be on or in the vicinity of a straight line passing through a center point of a magnetic pole of the magnet and parallel to a straight line perpendicular to both the magnet magnetization direction and the magnetic mobile object. The first and fourth magneto-electric converting elements are disposed so that, when not opposed to the magnetic mobile object, a component of a substrate of a magnetic field to be applied thereto is substantially same as that of a magnetic field to be applied to the second and third magneto-electric converting elements.

Magnetic position detection apparatus

A power semiconductor device includes a second conductive type sense outer-peripheral well formed to surround a plurality of sense wells on the surface of a drift layer, a first conductive type main-cell source region selectively formed on the surface of the main cell well, a first conductive type sense source region selectively formed on the surface of the sense well, a first conductive type capacitor lower electrode region selectively formed on the surface of the sense outer-peripheral well, a gate insulation film formed on the channel regions and on the sense outer-peripheral well, a gate electrode formed on the gate insulation film, and a sense pad electrically connected to the sense well and the sense source region as well as on the sense outer-peripheral well and the capacitor lower electrode region.

Power semiconductor device

A semiconductor device includes: a substrate; a semiconductor element on the substrate; an interconnection on the substrate and electrically connected to the semiconductor element; a window frame member on the substrate, surrounding the semiconductor element, and in contact with the interconnection; and a sealing window bonded to the window frame member and encapsulating the semiconductor element. The window frame member is a low melting glass and has a sheet resistance of 10-10&#x3a9;/&#x25a1;.

Semiconductor device

A magnetic detection apparatus includes a first comparison circuit that waveform-shapes the amplitude of a detection signal from magneto-electric transducers by DC coupling, a third comparison circuit that waveform-shapes the detection signal by AC coupling, an oscillation circuit having a natural frequency, a control circuit that counts the output of the first comparison circuit by using the oscillation means, and a selection circuit that selects the output of the first comparison means and the output of the second comparison means. The control circuit counts rising from the next rising or falling from the next falling of an output rectangular wave of the first comparison circuit, and provides output to the selection circuit at the time point at which the count value reaches a desired value. The selection circuit selects and outputs the output rectangular wave of the first comparison circuit or the third comparison circuit.

Magnetic detection apparatus

A power amplifier device that satisfies both delivering a high output and reducing the chip area occupied by the power amplifier device. Over a substrate, are primary inductors arranged in a generally circular geometry, a ground pattern, transistor pairs, and a secondary inductor. The ground pattern extends from a portion of a region inside the circular primary inductor into regions outside the primary inductor, and grounded at a plurality of points in the regions outside the primary inductor. The primary inductors are coupled to the ground pattern through transistors.

Power amplifier device

This invention provides a power amplifier device that satisfies both of delivering a high output and reducing the chip area occupied by the power amplifier device. The power amplifier device formed over a substrate comprises primary inductors arranged in a generally circular geometry, a ground pattern, transistor pairs, and a secondary inductor. The ground pattern is provided to extend from a portion of a region inside the circular primary inductor into regions outside the primary inductor, when viewed from the direction perpendicular to the substrate, and grounded at a plurality of points in the regions outside the primary inductor. To both ends of each primary inductor, first main electrodes of first and second transistors forming a transistor pair in linkage with the primary inductor are coupled respectively. Second main electrodes of the first and second transistors are coupled to the ground pattern in the region inside the primary inductor and have electrical conduction to the respective plurality of points grounded.

A semiconductor integrated circuit includes a differential amplifier circuit receiving first and second input voltages, a latch circuit comparing a voltage received from a first output terminal of the differential amplifier circuit through a first capacitor and a voltage received from the second output terminal of the differential amplifier circuit through a second capacitor and providing a digital signal representing a result of a comparison between the first and second input voltages, and a third capacitor having a first terminal coupled to a second terminal of the first capacitor and a second terminal coupled to a second terminal of the second capacitor.

Semiconductor integrated circuit performing a voltage comparison and preventing deterioration of a voltage comparison accuracy

A spiral inductor in which, where a spiral interconnect and an underpass interconnect intersect with each other, at least one layer of an electrically conductive film that forms the spiral interconnect is the underpass interconnect. The spiral interconnect has a smaller number of electrically conductive layers in the intersecting portion and has a wider interconnect width than the spiral interconnect in a non-intersecting portion.

Spiral inductor and transformer

A plasma processing method includes introducing at least one first processing gas into a processing chamber including a mounting stage supporting a substrate having a surface; generating a plasma in the first processing gas; introducing a second processing gas into a gas storage chamber separated from the processing chamber by a partition opposite the mounting stage and including a plurality of jet holes; and jetting neutral particles of the second processing gas from the gas storage chamber toward the substrate through the jet holes in a direction generally perpendicular to the surface of the substrate, thereby plasma processing the substrate.

Growing community of inventors

Chiyoda-ku, Japan

Kazuyasu Nishikawa