Kabushiki Kaisha Toshiba

Hitachi High-Tech Corporation

Victor Company of Japan, Limited

Toyo Engineering Corporation

Kazuya Yamada

Norihiko Ikeda

Naoki Yasui

Isao Mori

Hideki Nakamura

Koji Tanaka

Masaru Izawa

Kazunori Nishikawa

Shigeo Kasai

Yoshie Akai

Yasuo Takagi

Kentaro Matsunaga

Tsuneji Kameda

Koichi Yamamoto

Shoko Suyama

Masato Yoshino

Makoto Fujie

Haruhiko Takase

Tadashi Fukushima

Kenichiro Ide

Hisao Oomura

Yasushi Yamaguchi

Yasuhiro Yamada

Yutaka Hasegawa

Masahiko Yamada

Shuji Seki

Atsushi Ohara

Yoshiyasu Ito

Kazuo Murakami

Yoshikazu Matsubayashi

Tetsuya Noda

Manabu Sakurai

Noboru Jimbo

Masaru Komatsubara

Daisuke Horikawa

Ryouta Takahashi

Seiji Fujiwara

Kazuaki Nakagawa

Hidetsugu Fujii

Hisao Watanabe

Yumiko Abe

Norihisa Saito

Keiji Murata

Masahiko Oosaki

Takao Takada

Yoshikazu Hagiwara

Mitsutoshi Hamamura

Yasuhito Sakakibara

Shinichi Makino

Taiichi Ito

Toshihide Kobayashi

A plasma processing apparatus includes a processing chamber in which a sample is subjected to plasma processing, a first radio frequency power supply that supplies radio frequency power for generating plasma, a sample stage on which the sample is mounted, and a second radio frequency power supply that supplies radio frequency power to the sample stage, the plasma processing apparatus further includes a DC power supply that applies a DC voltage, that is changed according to a periodically repeated waveform, to the sample stage, and the waveform of one cycle has a period in which amplitude changes by a predetermined amount or more during a predetermined time. Accordingly, charged particles on a wafer surface are removed, a trench shape with high verticality can be obtained, and damage to a film that is not to be etched inside a trench can be reduced.

Plasma processing apparatus

A plasma processing apparatus includes: a processing chamber; a first radio frequency power supply configured to supply a first radio frequency power; a second radio frequency power supply configured to supply a second radio frequency power; and a control device configured to, when the first radio frequency power is modulated by a first waveform having a first period and a second period adjacent to the first period, and the second radio frequency power supply is modulated by a second waveform having a period A and a period B, control the second radio frequency power supply such that each second radio frequency power in the period A is supplied in the first period and the second period, in which an amplitude in the second period is smaller than an amplitude in the first period, and an amplitude in the period A is larger than an amplitude in the period B.

According to one embodiment, a plasma processing apparatus includes a processing chamber, a sample stage that is disposed inside the processing chamber and electrically divided into a plurality of regions on which a sample is placed, an electromagnetic wave introduction unit that introduces electromagnetic waves into the processing chamber, and a bias power applying unit that applies bias power to the sample stage, in which the bias power applying unit is configured to include a first radio frequency power applying unit that applies first radio frequency power to a first region out of the plurality of electrically divided regions of the sample stage, a second radio frequency power applying unit that applies second radio frequency power to a second region out of the plurality of electrically divided regions of the sample stage, and a phase adjuster that controls the first radio frequency power applying unit and the second radio frequency power applying unit to shift the phases of the first radio frequency power and the second radio frequency power by a predetermined amount.

Plasma processing apparatus and plasma processing method

A plasma processing apparatus includes a processing chamberwhere a waferis processed using plasma, a radio frequency power supplyconfigured to supply a radio frequency power for generating the plasma, a mechanism configured to form a magnetic field for forming ECR and to control a magnetic flux density thereof, and a sample stageon which the waferis placed. The plasma processing apparatus further includes a control unitconfigured to, based on image data of the plasma, monitor a height of ECR which is electron cyclotron resonance generated by an interaction between the radio frequency power and the magnetic field, and to control a frequency of the radio frequency power such that the monitored ECR height becomes a predetermined height.

Plasma processing apparatus, plasma processing method, and ECR height monitor

In a plasma processing apparatus, a placement electrode includes an inner peripheral electrode for electrostatically adsorbing a wafer and an outer peripheral electrode disposed outside the inner peripheral electrode for electrostatically adsorbing the wafer, and a DC power supply unit on which the wafer is placed supplies a first radio frequency power to the inner peripheral electrode via an inner peripheral transmission path. A DC power supply unit supplies a second radio frequency power having the same frequency as the frequency of the first radio frequency power to the outer peripheral electrode via an outer peripheral transmission path. An electromagnetic wave generating power supply supplies a third radio frequency power for generating plasma. A control device controls a phase difference between a phase of the first radio frequency power and a phase of the second radio frequency power so that a phase of a radio frequency voltage applied to the inner peripheral electrode and a phase of a radio frequency voltage applied to the outer peripheral electrode are equal.

A hydrogen production system includes: a steam generator heating supplied raw water and generating steam; an electrolytic cell receiving the steam and generating hydrogen and oxygen through a high temperature electrolysis; a cooling unit cooling an unreacted part of the steam in the high temperature electrolysis and changing the unreacted part of the steam into steam condensate; a gas/liquid separator performing gas/liquid separation on the generated hydrogen and the generated steam condensate; a hydrogen compression unit compressing the separated hydrogen and transmitting thermal energy generated when the hydrogen is compressed, to the raw water; and a hydrogen storage unit storing the compressed hydrogen.

Hydrogen production system and method for producing hydrogen

In one embodiment, an electrical power storage system using hydrogen includes a power generation unit generating power using hydrogen and oxidant gas and an electrolysis unit electrolyzing steam. The electrical power storage system includes a hydrogen storage unit storing hydrogen generated by the electrolysis and supplying the hydrogen to the power generation unit during power generation, a high-temperature heat storage unit storing high temperature heat generated accompanying the power generation and supplying the heat to the electrolysis unit during the electrolysis, and a low-temperature heat storage unit storing low-temperature heat, which is exchanged in the high-temperature heat storage unit and generating with this heat the steam supplied to the electrolysis unit.

Electrical power storage system using hydrogen and method for storing electrical power using hydrogen

Calculation is made about standard deviations of portions of high-frequency components GH, RH, and BH along respective predetermined directions. The portions of the high-frequency components GH, RH, and BH represent a prescribed number of pixels including an interpolation pixel located at a position corresponding to none of photosensor pixels in G, R, and B image sensors. The smallest one is detected among the calculated standard deviations. The predetermined direction relating to the detected smallest standard deviation is labeled as a highest-correlation direction in which the highest correlation occurs. Interpolation is implemented in response to portions of the high-frequency components GH, RH, and BH which correspond to the highest-correlation direction to generate a high-frequency interpolation-result signal RGBHI for the interpolation pixel and other pixels. Low-frequency components GL, RL, and BL are combined with the high-frequency interpolation-result signal RGBHI to generate high-definition green, red, and blue signals G(HD), R(HD), and B(HD).

Imaging apparatus and method of processing video signal

A hydrogen iodide manufacturing method which includes a step of producing aqueous solution of hydrogen iodide and sulfuric acid by causing iodine-containing aqueous solution and sulfur dioxide to react with each other in a pressurized condition. The pressurized condition may be of not lower than 0.1 MPa in gauge pressure. The method may further include: a separation step of adding iodine to the aqueous solution of hydrogen iodide and separating an upper phase containing sulfuric acid relatively to a large extent and a lower phase containing hydrogen iodide relatively to a large extent; and a step of producing hydrogen iodide by adding sulfur dioxide to the upper phase in a pressurized condition and extracting the produced hydrogen iodide to the lower phase.

Hydrogen iodide manufacturing method and hydrogen iodide manufacturing apparatus

A filtering apparatus having a vessel and a filter made from fluororesin and treated before filtering operation by at least one of adding thermal treatment in gas or liquid and penetrating with fluid composed of hot water or steam at a temperature of less than melting point of the fluororesin.

Filtering apparatus, back wash method therefor, filtering device and power plant

Growing community of inventors

Tokyo, Japan

Kazuya Yamada