Sharp Kabushiki Kaisha Corporation

Kazuya Tsujino

Toshihiko Sakai

Liumin Zou

Takeshi Kamikawa

Masatomi Harada

Tokuaki Kuniyoshi

Atsushi Hachiya

Teruaki Higo

Kenichi Higashi

Naoki Asano

Rihito Suganuma

Tadashi Iwamatsu

Tomohiro Kosaka

Kohji Shinkawa

Hiroaki Furukawa

Yuta Matsumoto

Masamichi Kobayashi

Chikao Okamoto

Natsuko Fujiwara

Reshan Maduka Abeysinghe

Tomoko Teranishi

Naoki Koide

Makoto Higashikawa

Chihiro Tachino

Michio Matsumura

Provided is an analysis device capable of analyzing a wide range of ion concentrations. The analysis device includes: an ion separating unit selectively conducting a specific kind of ions from among a plurality of kinds of ions flowing through a flow path; a detection electrode provided in the flow path and disposed toward an outlet with respect to the ionization unit; and a deflection electrode positioned across the flow path from the detection electrode, and generating an electric field that moves the specific kind of ions toward the detection electrode. The deflection electrode is capable of adjusting a width of a region in which the electric field is generated in a width direction perpendicular to a direction in which the flow path extends.

Analysis device

An electrowetting device includes a first substrate, a plurality of first electrodes formed on the first substrate, a dielectric layer formed on the plurality of first electrodes, a first water-repellent layer formed on the dielectric layer, a second substrate, a second electrode formed on the second substrate, and a second water-repellent layer formed on the second electrode. The first substrate and the second substrate are arranged with a gap between the first water-repellent layer and the second water-repellent layer. The first electrode includes an indium oxide-zinc oxide layer, the dielectric layer includes a silicon nitride layer, and the silicon nitride layer is formed directly on the indium oxide-zinc oxide layer.

Electrowetting device

This electron emitting element includes a lower electrode, a surface electrode facing the lower electrode, a resistance layer arranged between the lower electrode and the surface electrode, and an insulating layer arranged between the lower electrode and the surface electrode. The resistance layer is an insulating resin layer containing conductive fine particles in a dispersed state. The insulating layer has a peripheral region for defining the electron emission region, and an emission control region which is arranged so as to overlap the electron emission region defined by the peripheral region. The emission control region is configured by a line-shaped insulating layer, a plurality of dot-shaped insulating layers, or both a line-shaped insulating layer and a plurality of dot-shaped insulating layers. The percentage of an area that the emission control region represents within an area of an electron emission region defined by the peripheral region is 2% or more and 60% or less.

Electron emitting element

A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction.

Photovoltaic devices and photovoltaic modules

Provided are an active matrix substrate having a reduced driving voltage and excellent adhesion between a dielectric layer and a water-repellent layer and a microfluidic device including the substrate. The active matrix substrate includes an array electrode, a dielectric layer covering the array electrode, and a first water-repellent layer in this order on a first substrate. The dielectric layer includes a silicon nitride film located on the side in contact with the first water-repellent layer, and the silicon nitride film has a surface layer region containing oxygen in the surface on the side in contact with the first water-repellent layer.

Active matrix substrate, microfluidic device provided with same, method for producing said active matrix substrate, and method for producing said microfluidic device

Provided is a photoelectric conversion device capable of suppressing diffusion of a dopant in a p layer or n layer into an adjacent layer. A photoelectric conversion device is provided with a silicon substrate, a substantially intrinsic amorphous layer formed on one surface of the silicon substrate, and a first conductive amorphous layer that is formed on the intrinsic amorphous layer. The first conductive amorphous layer includes a first concentration layer and a second concentration layer that is stacked on the first concentration layer. The dopant concentration of the second concentration layer is 8&#xd7;10cmor more, and is lower than the dopant concentration of the first concentration layer.

Photoelectric conversion device

An active matrix substrate includes: a first substrate; and first electrodes, a dielectric layer covering the first electrodes, and a first water-repelling layer in this sequence on the first substrate, wherein the dielectric layer has a multilayer structure including two or more layers and includes a silicon nitride film and a metal-oxide film between the silicon nitride film and the first water-repelling layer, and the silicon nitride film has an oxygen-containing surface layer region on a surface thereof that is in contact with the metal-oxide film.

Method of manufacturing active matrix substrate

An electron emission element of the present invention includes a lower electrode, a surface electrode, and a silicone resin layer disposed between the lower electrode and the surface electrode, wherein the surface electrode includes a silver layer, and the silver layer is in contact with the silicone resin layer.

Electron emission element and method for manufacturing same

A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction. Therefore, the photovoltaic device has an improved heat resistance.

In a photovoltaic device (), first amorphous semiconductor portions () and second amorphous semiconductor portions () are provided alternately on one of faces of a semiconductor substrate (). Each first amorphous semiconductor portion () has at least one first amorphous semiconductor strip (), and each second amorphous semiconductor portion () has at least one second amorphous semiconductor strip (). A plurality of first electrodes () are provided spaced apart from each other on each first amorphous semiconductor strip (), and a plurality of second electrodes () are provided spaced apart from each other on each second amorphous semiconductor strip ().

Photovoltaic device

A photovoltaic conversion device () includes a semiconductor substrate (), a passivation film (), n-type amorphous semiconductor strips, p-type amorphous semiconductor strips (), and electrodes (). The passivation film () is formed on one of the surfaces of the semiconductor substrate (). The n- and p-type amorphous semiconductor strips are arranged alternately as viewed along an in-plane direction of the semiconductor substrate () (Y-axis direction). The p-type amorphous semiconductor strips () have reduced-thickness regions () at some intervals as viewed along the length direction of the p-type amorphous semiconductor strips () (X-axis direction). The n-type amorphous semiconductor strips have a similar structure. The electrodes () are provided on the p-type amorphous semiconductor strips (), but not in areas where the reduced-thickness regions () have a positive curvature r with respect to the length direction of the reduced-thickness regions (). Electrodes on the n-type amorphous semiconductor strips have a similar arrangement.

Photovoltaic conversion device, photovoltaic module, and solar power generation system

A photovoltaic device and a photovoltaic module are provided that suppressing diffusion of boron and thereby improving conversion efficiency. A photovoltaic deviceincludes: a semiconductor substrate; an intrinsic amorphous semiconductor layerprovided on the semiconductor substrate; n-type amorphous semiconductor stripscontaining phosphorus as a dopant; and p-type amorphous semiconductor stripscontaining boron as a dopant, the n- and p-type amorphous semiconductor stripsandbeing provided alternately on the intrinsic amorphous semiconductor layeras viewed along an in-plane direction. Each n-type amorphous semiconductor stripincludes a reduced-thickness region TD(n) on a face thereof adjacent to one of the p-type amorphous semiconductor strips. Each p-type amorphous semiconductor stripincludes a reduced-thickness region TD(p) on a face thereof adjacent to one of the n-type amorphous semiconductor strips. The reduced-thickness region TD(p) of the p-type amorphous semiconductor striphas a steeper angle of inclination than does the reduced-thickness region TD(n) of the n-type amorphous semiconductor strip

A photovoltaic device () includes: an i-type amorphous semiconductor layer () formed in contact with one of the surfaces of a semiconductor substrate (); p-type amorphous semiconductor strips () spaced apart from each other and provided on the i-type amorphous semiconductor layer (); and n-type amorphous semiconductor strips () spaced apart from each other and provided on the i amorphous semiconductor layer (), each n-type amorphous semiconductor strip () being adjacent to at least one of the p-type amorphous semiconductor strips () as traced along an in-plane direction of the semiconductor substrate (). The photovoltaic device () further includes electrodes () as a protection layer formed in contact with the i-type amorphous semiconductor layer () between adjacent p-type amorphous semiconductor strips () and between adjacent n-type amorphous semiconductor strips ().

There is provided a photoelectric conversion element which includes an n-type single crystal silicon substrate (). The n-type single crystal silicon substrate () includes a central region () and an end-portion region (). The central region () is a region which has the same central point as the central point of the n-type single crystal silicon substrate () and is surrounded by a circle. The diameter of the circle is set to be a length which is 40% of a length of the shortest side among four sides of the n-type single crystal silicon substrate (). The central region () has a thickness t. The end-portion region () is a region of being within 5 mm from an edge of the n-type single crystal silicon substrate (). The end-portion region () is disposed on an outside of the central region () in an in-plane direction of the n-type single crystal silicon substrate (), and has a thickness twhich is thinner than the thickness t. The end-portion region () has average surface roughness which is smaller than average surface roughness of the central region ().

Photoelectric conversion element and solar cell module provided with same

A crystalline substratehaving straight or spiral deep pores is obtained in cost effective manner. A method for forming pores comprises the steps of preparing the monocrystalline substrateof which (100) surface is processed to be perpendicular to the depth direction of pores to be formed, and an etchant containing 10.0% by weight or less hydrofluoric acid; and chemically etching the substrate surface with metallic particlessuch as silver, platinum and palladium electroless-plated on it.

Growing community of inventors

Sakai, Japan

Kazuya Tsujino