Shin-etsu Handotai Co., Ltd.

Kabushiki Kaisha Square Enix

Rodel Nitta Company

Kazuya Tomii

Tetsuro Uchida

Daisuke Miyata

Yoshimasa Asao

Yuuichi Tanzawa

Hisashi Masumura

Koji Kitagawa

Kazutoshi Mizushima

Nakaji Miura

Hiroyasu Kikuchi

Makoto Suzuki

Shigenao Ito

Kenichi Anzai

Kenichi Inoue

Yasuhiro Sekine

A method for measuring a DIC defect shape on a silicon wafer, the method including steps of: detecting a DIC defect on a main surface of the silicon wafer with a particle counter; specifying position coordinates of the detected DIC defect; and measuring a shape including at least a height or depth of the detected DIC defect by utilizing the specified position coordinates according to phase-shifting interferometry. The method for measuring a DIC defect shape by which the shape including size of DIC defect generated on a main surface of a silicon wafer is easily and precisely measured.

Method for measuring DIC defect shape on silicon wafer and polishing method

An apparatus and method for providing a touch operation is provided. The apparatus includes a display to display an image, a coordinate input to input a coordinate on a display screen of the display, and a processor to execute a process. The process including determining first input detected as a first specifying operation specifying an area on a display screen. The process also includes determining, when a second input is detected and the first input is continuously detected, the first and the second inputs as a second specifying operation. Also, the process includes determining, when one of the first and the second inputs is discontinued after determining the second specifying operation, a continuing and remaining input as the first specifying operation which treats the continuing and remaining input as the first input.

Information processing apparatus, method for information processing, and game apparatus for performing different operations based on a movement of inputs

A method for determining a defect region of a silicon wafer which is sliced off from a silicon single crystal manufactured by a CZ method, the method including: (1) mirror-surface processing the silicon wafer in such a manner that a haze level of a surface thereof in haze measurement performed by a particle counter which uses a laser having a wavelength of 266 nm becomes 0.06 ppm or less; (2) measuring the number of defects and/or a defect density distribution on the mirror-surface-processed surface of the silicon wafer by using a particle counter capable of measuring defects having a size of 15 nm or less; and (3) determining the defect region of the silicon wafer from the measured number of the defects and/or defect density distribution.

Method for determining defect region

[Problem] The present invention intends to provide a scrolling screen apparatus, a method for scrolling screen, and a game apparatus, which prevent from scrolling display screen by user's misoperation and scroll display screen with intuitive operation. [Method of solution] A control deviceof the present invention scrolls the display screen by the amount of displacement corresponding to the displacement vector of each input coordinate, in a displacement scroll mode between the input of the touch coordinates and the input of the release coordinates to the coordinate input deviceand, meanwhile the control devicescrolls the display screen by the amount of displacement corresponding to the scroll distance which is the sum total of the distances between the touch coordinates, each sampling coordinate and release coordinates read from the coordinate storage device, in an inertia scroll mode after the input of release coordinates. For example, the present invention scrolls the display screen by the amount of displacement corresponding to the sliding distance of the user's finger on the display.

Scrolling screen apparatus, method for scrolling screen, and game apparatus

The present invention is a method for slicing a workpiece into wafers by pressing a cylindrical workpiece held with a workpiece holder against a wire row formed by a wire spirally wound between a plurality of wire guides and making the wire travel while supplying a slurry to a contact portion between the workpiece and the wire, wherein the workpiece is sliced with an axis direction of the workpiece inclined with respect to a plane formed by the wire row, after the workpiece is inclined in such a manner that a side far from the wire row plane is a side where the wire guides are to be axially expanded. As a result, there is provided a method for slicing that enable wafers having a good Warp shape to be obtained by precisely slicing a workpiece with a wire saw.

Method for slicing workpiece

A method for polishing a wafer effectively preventing a sag in an outer peripheral portion of a wafer and a polishing pad for polishing a wafer preferably used in the method for polishing a wafer are provided. The method for polishing a wafer comprises the step of: mirror-polishing a wafer with a main surface of the wafer being in contact with a polishing pad of non-woven fabric impregnated with resin, wherein a ratio of surface roughness of the polishing pad to compressibility thereof {surface roughness Ra (&#x3bc;m)/compressibility (%)} is 3.8 or more.

Method and pad for polishing wafer

In a process for polishing the chamfered peripheral part of a wafer using a polishing cloth while supplying a polishing slurry in order to improve productivity of the process by reducing a polishing time, at least two steps of polishing processes are performed in sequence. The process comprises a first polishing process to polish a particular part, e.g. the part corresponding to the {110} plane of a peripheral part of the wafer and a second polishing process in which the whole part of a peripheral part of the wafer is polished for finishing by means of varying a hardness of the polishing clothes and/or a particle size of abrasives in the slurry such as the hardness of the polishing cloth in the second polishing process being softer than that of in the first polishing process and a particle size of abrasives in the slurry in the second polishing process being finer than that of in the first polishing process.

Growing community of inventors

Chiyoda-ku, Japan

Kazuya Tomii