National Institute for Materials Science

Riken Corporation

Japan Science and Technology Agency

Other

Japan Science and Technology Corporation

Nec Corporation

Panasonic Holdings Corporation

Kazuya Terabe

Masakazu Aono

Tsuyoshi Hasegawa

Tomonobu Nakayama

Kenji Kitamura

Shunji Takekawa

Hirofumi Tanaka

Tadahiko Sugibayashi

Kensuke Nakura

Toshitsugu Sakamoto

Hideki Hatano

Takuji Tsujita

Sunao Kurimura

Hisao Kawaura

Masaru Nakamura

Takuji Ogawa

Shunichi Hishida

Xiaoyan Liu

Tomoko Ebihara

Toru Tsuruoka

Takami Hino

Fumiko Yano

Shunichi Hishita

Yaomi Itoh

Xijun Li

Tohru Tsuruoka

Tamaki Shimura

Takashi Tsuchiya

Taichi Okuda

Jin Su

Yu Nishitani

A solid electrolyte according to the present disclosure has a composition represented by MgZr(PO)(0<x≤3.5, 0≤y<1.5, and 3≤z≤4.25), and includes an amorphous part. The composition may be represented by Mg(PO)(3≤x≤3.5 and 3≤z≤4.25). The composition may be represented by MgZr(PO)(0<x<3.5, 0<y<1.5, and 3≤z≤4.25).

Solid electrolyte and magnesium secondary battery using same

A nonvolatile three-terminal element is provided that operates by controlling a bandgap in an electron state of a graphene-based material. An ion conductor () having hydrogen ion or oxygen ion conductivity is provided between graphene oxide or graphene (hereinafter, referred to as GO) (), and a gate electrode (). In addition, a drain electrode () and a source electrode () are provided on a GO () side.

Electrical conduction element, electronic device, and method for operating electrical conduction element

The object of the invention is to provide a three-terminal switch (electrochemical transistor) capable of achieving sharp on-off operation. A source electrode and a drain electrode are juxtaposed with an insulator interposed between them, and on the assembly there is an ion diffusion member such as TaOlocated. On the opposite surface of the ion diffusion member, there is a gate electrode located that is capable of supplying metal ions such as copper ions. By application of voltage to the gate electrode, the metal ions going out of the gate electrode are reversibly precipitated as metal on both source and drain electrodes as well as on the insulator near them, thereby controlling conduction and non-conduction between the source electrode and the drain electrode.

Electrochemical transistor

A micro-switching element provided with a first electrodecontaining an ionic conductor and a second electrodecomposed of an electric conductor, wherein the first electrodeand the second electrodeare physically and electrically connected to each other through deposition of a metal ion from the ionic conductor, and wherein a photoresponsive filmthat receives light to generate a carrier is disposed between the first electrodeand the second electrodeto fill up the space between the electrodes. Accordingly, a micro-switching element is provided of which the characteristic fluctuation is small and which hardly produces a problem of operation failure.

Switching element and application of the same

A method of fixing a polarization-reversed region formed in a ferroelectric single crystal, including preparing a ferroelectric single crystal having a polarization-reversed region; and irradiating an ion beam or a neutral beam on the ferroelectric single crystal. The ferroelectric single crystal is a substantially stoichiometric lithium tantalate single crystal or a substantially stoichiometric lithium niobate single crystal, and the polarization-reversed region is fixed and any back switch and expansion of the polarization-reversed region are suppressed.

Method of fixing polarization-reversed region formed in ferroelectric single crystal

Provided are a method and an apparatus for forming a nanometer-order polarization-reversed region in a ferroelectric single crystal, and a device using the ferroelectric single crystal. The method according to the present invention for forming a polarization-reversed region in a ferroelectric single crystal includes the steps of grounding a first surface of the ferroelectric single crystal, and irradiating a second surface of the ferroelectric single crystal opposite to the first surface with an ion beam. The ion beam is irradiated such that the charge density Q (&#x3bc;C/cm) accumulated on the second surface irradiated with the ion beam satisfies the following relationship:0.7&#xd7;where Ps is the spontaneous polarization (&#x3bc;C/cm) of the ferroelectric single crystal.

Method of forming polarization reversal area, apparatus thereof and device using it

The present invention relates to a transistor for selecting a storage cell and a switch using a solid electrolyte. In a storage cell, a metal is stacked on a drain diffusion layer of a field-effect transistor formed on a semiconductor substrate surface. The solid electrolyte using the metal as a carrier is stacked on the metal. The solid electrolyte contacts with the metal via a gap, and the metal is connected to a common grounding conductor. A source of the field-effect transistor is connected to a column address line, and a gate of the field-effect transistor is connected to a row address line.

Electric device using solid electrolyte

There are provided a point contact array, in which a plurality of point contacts are arranged, each point contact electrically and reversibly controlling conductance between electrodes and being applicable to an arithmetic circuit, a logic circuit, and a memory device, a NOT circuit, and an electronic circuit using the same. A circuit includes a plurality of point contacts each composed of a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. The conductance of each point contact is controlled to realize the circuit. AgS, AgSe, CuS, or CuSe is preferably used as the compound conductive material. When a semiconductor or insulator material is interposed between the electrodes, a crystal or an amorphous material of GeS, GeSe, GeTe, or WO(0&#x3c;x&#x3c;100) is preferably used as the semiconductor or insulator material. A NOT circuit is realized using a device which includes an atomic switch serving as a two-terminal device, the device including a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance, and capable of controlling conductance between the electrodes.

Point contact array, not circuit, and electronic circuit using the same

A NOT circuit realized using an atomic switch serving as a two terminal device and including a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. AgS, AgSe, CuS, or CuSe is preferably used as the compound conductive material.

Point contact array, not circuit, and electronic circuit comprising the same

A problem to be solved is to provide a method of forming domain inverted regions of short period in a ferroelectric single crystal in a controllable time period of application of voltage and an optical wavelength conversion element using the same. A solving means of it solves the problem by forming (i) a control layer having a larger defect density Dthan the defect density Dof a ferroelectric single crystal (D&#x3c;D) or forming (ii) a control layer having a lower degree of order of lattice points than the degree of order of lattice points of the ferroelectric single crystal on a face perpendicular to the direction of polarization of the ferroelectric single crystal in the ferroelectric single crystal.

Method of inverting polarization by controlling defect density or degree of order of lattice points

A point contact array, including plural point contacts electrically and reversibly controlling conductance between electrodes and being applicable to an arithmetic circuit, a logic circuit, a memory device, a NOT circuit, and an electronic circuit including the same. The circuit includes plural point contacts each including a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. The conductance of each point contact is controlled to realize the circuit. AgS, AgSe, CuS, or CuSe is preferably used as the compound conductive material. When a semiconductor or insulator material is interposed between the electrodes, a crystal or an amorphous material of GeS, GeSe, GeTe, or WO(0&#x3c;x&#x3c;100) is preferably used as the semiconductor or insulator material. The NOT circuit is realized using a device including an atomic switch serving as a two-terminal device, the device including a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance, and capable of controlling conductance between the electrodes.

This invention provides a method for constructing bridge including fine wires or point contacts producing a quanitized inter-electrode conductance, and provides a method for easily controlling the conductance of this bridge. Further, it aims to provide an electronic element using conductance control due to the bridge, fine wire or point contact formed between the electrodes. These objects are accomplied with an electronic element comprising a first electrode comprising a mixed electroconducting material having ion conductance and electron conductance, and a second electrode comprising an electroconducting substance, wherein the inter-electric conductance can be controlled. In another aspect, this invention is an electronic element formed by a bridge between electrodes, by applying a voltage between the electrodes so that the second electrode is negative with respect to the first electrode and movable ions migrate from the first electrode to the second electrode. In a third aspect, this invention is a method of controlling inter-electrode conductance comprising at least one of applying a voltage between the electrodes of the above electronic element so that the second electrode is negative with respect to the first electrode so that a bridge is formed between the electrodes due to the migration of movable ions from the first electrode to the second electrode, and reversing the inter-electrode polarity so that the bridge is thinned or disconnected.

Electronic device having controllable conductance

An apparatus provided for evaluating electrical characteristics by bringing a plurality of metal probes in contact with a sample. A metal probe is formed on a free end of a cantilever on which are formed a resistor, two electrodes for resistance detection, and an electrode for measuring electrical characteristics. A tip of the metal probe projects beyond the free end of the cantilever. The probe position is controlled by an atomic force microscopy.

Apparatus for evaluating electrical characteristics

The invention provides a probe for use with a scanning tunneling microscope, a method of treating the probe, and a method of fabricating a nano-structure, which facilitates formation of a continuous nano-structure. The probe for the scanning tunneling microscope is formed of an Ag S crystal having both ion conductivity and electron conductivity. Voltage and tunnel current are applied between the probe and a substrate in order to move movable Ag ions to thereby grow, on the tip end of the probe, a projection (mini chip) composed of Ag ions or Ag atoms. The polarity of the applied voltage is reversed after the growth of the projection in order to return the Ag ions or Ag atoms constituting the grown projection (mini chip) into the Ag S crystal to thereby contract the projection. Thus, the probe can have a projection composed of Ag ions or Ag atoms and a regulated shape. Further, the movable ions or atoms of the mixed-conductive material are transferred onto the substrate so as to form a nano-structure on the substrate.

Growing community of inventors

Toda, Japan

Kazuya Terabe