Mitsubishi Electric Corporation

Toyota Jidosha Kabushiki Kaisha

Kazuya Okada

Yasutaka Shimizu

Koichi Masuda

Hidetoshi Ishibashi

Yuji Miyazaki

Hiroki Muraoka

Nobuhiro Asaji

Shoji Izumi

A first controller of a first device monitors communication to a first vehicle connected to the network. Further, when it is detected that an attack on the first vehicle is being carried out from the attack source device, the first controller transmits a first command for activating a honeypot server simulating a vehicle system of the first vehicle to the second device and transmits a second command for transferring packets transmitted from the attacking device to the first vehicle to the second device to a communication device that relays communication to the first vehicle in the network. Further, a second controller of a second device processes packets transmitted from the attack source device to the first vehicle and transferred to the second device by the communication device.

Attack detection system

A power semiconductor device in which the size of an insulating substrate is reduced and connection failure can be suppressed includes an insulating substrate, a semiconductor element, and a printed circuit board. The semiconductor element is bonded to one main surface of the insulating substrate. The printed circuit board is bonded to face the semiconductor element. The semiconductor element has a main electrode and a signal electrode. The printed circuit board includes a core member, a first conductor layer, and a second conductor layer. The second conductor layer has a bonding pad. The printed circuit board has a missing portion. A metal column portion is arranged to pass through the inside of the missing portion and reach the insulating substrate. The signal electrode and the bonding pad are connected by a metal wire. The metal column portion and the insulating substrate are bonded.

Power semiconductor device and method of manufacturing the same, and power conversion device

The object is to provide a technology for enabling detection of the voltage resistance in an assembled snubber substrate. A semiconductor device includes: a snubber substrate fixed to a base while being spaced from a p electrode and an n electrode; a snubber circuit disposed on the snubber substrate and electrically connected to the p electrode and the n electrode; and a semiconductor element electrically connected to the snubber circuit. The base includes an insulating component insulating the p electrode, the n electrode, and the snubber substrate from one another.

Semiconductor device and method for manufacturing the same

Provided is a technique for improving product attachment. In a semiconductor device, the following expression is satisfied by an angle A formed by an imaginary line connecting two attachment holes together and an imaginary line connecting together a lowest point of one of two projections positioned in a surrounding portion of one of the two attachment holes and a contact point between a bulge and a heat sink, with a screw fastened to the heat sink through the one attachment hole, where M represents a vertical direction between the lower end of a body and the lower end of a case, where W represents a bulge amount of the bulge, where T represents a height of the projection, where L represents a horizontal distance from the outer peripheral end of the case to the outer peripheral end of the heat dissipation plate: 0&#x3c;A&#x3c;arctan((M+W&#x2212;T)/L).

Growing community of inventors

Tokyo, Japan

Kazuya Okada