Tokyo Electron Limited

Kabushiki Kaisha Toshiba

Octec, Inc.

Tokyo Electron Yamanashi Limited

Sharp Kabushiki Kaisha Corporation

Ibiden Company Limited

Kazuya Nagaseki

Shinji Himori

Masanobu Honda

Koichi Nagami

Kazuki Moyama

Shoichiro Matsuyama

Keizo Hirose

Katsuya Okumura

Kosuke Imafuku

Yukio Naito

Shosuke Endo

Kazuhiro Tahara

Daisuke Hayashi

Akira Koshiishi

Koji Maruyama

Michishige Saito

Tatsuro Ohshita

Hisataka Hayashi

Masayuki Tomoyasu

Naoyuki Satoh

Toshiya Matsuda

Akihiro Yokota

Gen Tamamushi

Takanori Mimura

Hiroshi Nishikawa

Yoshio Sakamoto

Shinji Kubota

Mitsuaki Komino

Etsuji Ito

Shota Kaneko

Hiroki Matsumaru

Hiroto Takenaka

Alok Ranjan

Peter Ventzek

Nobuyuki Nagayama

Tokuhisa Ohiwa

Mitsunori Ohata

Zhiying Chen

Koichiro Inazawa

Akinori Kitamura

Itsuko Sakai

Keiichi Nagakubo

Takashi Dokan

Takayuki Ishii

Ryo Nonaka

Toshiki Takahashi

Akiteru Rai

Shu Kusano

Naokazu Furuya

Kazunobu Fujiwara

Katsumi Horiguchi

Joel Blakeney

Hiroki Miyajima

Yoshiyuki Kobayashi

Chishio Koshimizu

Makoto Aoki

Kyoichi Suguro

Tsuyoshi Moriya

Haruo Okano

Nobuo Hayasaka

Jun Hirose

Minoru Honda

Masahiro Ogasawara

Hiroki Yamazaki

Toshihiro Hayami

Yusuke Hirayama

Takashi Fuse

Satoshi Taga

Hitoshi Ito

Takashi Enomoto

Shosuke Endoh

Koichi Murakami

Hiroo Ono

Yoshio Fukasawa

Youichi Araki

Tadashi Onishi

Takaaki Nezu

Satoru Teruuchi

Kiwamu Fujimoto

Tomoyo Yamaguchi

Akiteru Koh

Hiroshi Tsuchiya

Koichi Tateshita

Atsushi Matsuura

Kazunori Nagahata

Noriaki Imai

Takeshi Saito

Isao Kobayashi

Kenji Momose

Shuuji Mochizuki

Riki Tomoyoshi

Shuji Mochizuki

Megan Carruth

Yoshikazu Sugiyasu

Tomoya Kubota

Hiroharu Ito

Kenji Yamamoto

Yahui Huang

Akiko Kamigori

A member to be used in a substrate processing apparatus is provided. The member is formed of aluminum containing silicon, and the silicon has a particle diameter of 1 μm or less.

Member, manufacturing method of member and substrate processing apparatus

A plasma monitoring system includes a monitoring device and a control device. The monitoring device is a device to be placed on a stage in the plasma processing apparatus. The monitoring device includes a plate-shaped base substrate, and a plurality of spectroscopes having optical axes facing upward on the base substrate, and being disposed apart from each other to acquire light emission intensities of the plasma. The control device acquires light emission intensity distribution data of the plasma in the plasma processing apparatus based on the light emission intensity acquired by each of the plurality of spectroscopes.

Plasma monitoring system, plasma monitoring method, and monitoring device

An exhaust device including an exhaust mechanism and an exhaust unit is provided. The exhaust mechanism includes a first blade unit and a second blade unit provided in an exhaust space of a processing vessel including a processing space of a vacuum atmosphere for applying a process to a workpiece. The first blade unit and the second blade unit are arranged coaxially with a periphery of the workpiece, and at least one of the first blade unit and the second blade unit is rotatable. The exhaust unit is provided at a downstream side of the exhaust mechanism and communicates with the exhaust space. The exhaust unit is configured to exhaust gas in the processing vessel.

Exhaust device, processing apparatus, and exhausting method

A stage includes a first member made of a material having a density of 5.0 g/cmor less, and a second member joined to the first member. The second member is made of a material having a linear expansion coefficient of 5.0×10/K or less and a thermal conductivity of 100 W/mK or more. A flow passage for a temperature control medium is formed in at least one of the first member and the second member.

Stage and substrate processing apparatus

A plasma processing apparatus includes a chamber and a substrate support provided in the chamber. A power supply unit is connected to a lower electrode of the substrate support. The power supply unit applies a first DC voltage to the lower electrode during generation of plasma from an etching gas in the chamber. The first DC voltage is a positive DC voltage. The power supply unit applies a second DC voltage to the lower electrode during the generation of plasma from the etching gas in the chamber, to etch the substrate placed on the substrate support. The second DC voltage is a negative DC voltage. The DC voltage output by the power supply unit is continuously switched from the first DC voltage to the second DC voltage.

Plasma processing apparatus and plasma processing method

A part transporting device for transporting a consumable part includes a part housing, a container, a robot arm, and a moving mechanism. The part housing accommodates an unused consumable part and a used consumable part. The container has an opening to be connected to a processing device and a gate valve for opening or closing the opening, the container being configured to accommodate the part housing. The robot arm is provided in the container and has at least one end effector at a tip end thereof, the robot arm transferring the used consumable part from the processing device through the opening to accommodate the used consumable part in the part housing and transferring the unused consumable part from the part housing to load the unused consumable part the processing device through the opening. The moving mechanism has a power source and is configured to move the part transporting device.

Part transporting device and processing system

An etching apparatus includes: a placement table serving as a lower electrode and configured to place a workpiece to be subjected to an etching processing thereon; a DC power supply configured to generate a negative DC voltage applied to the placement table; and a controller configured to: periodically apply a negative DC voltage to the placement table from the DC power supply when the etching processing on the workpiece placed on the placement table is initiated, and decrease a frequency of the negative DC voltage applied to the placement table with an elapse of processing time of the etching processing.

Etching apparatus and etching method

A plasma processing apparatus includes a chamber; a substrate support disposed in the chamber and including a lower electrode; an upper electrode disposed above the substrate support; an RF source that supplies an RF power to the lower electrode or the upper electrode, the RF power having a plurality of power levels during a first sequence in a repeating time period, the plurality of power levels including a first power level during a first state and a second state, and a second power level during a third state and a fourth state; and a DC source that applies a DC voltage to the lower electrode, the DC voltage having a plurality of voltage levels during the first sequence in the repeating time period.

Plasma processing apparatus and system

A disclosed plasma processing method includes generating plasma in a chamber of a plasma processing apparatus by supplying radio frequency power from a radio frequency power source in a first period. The plasma processing method further includes stopping supply of the radio frequency power from the radio frequency power source in a second period following the first period. The plasma processing method further includes applying a negative direct-current voltage from a bias power source to a substrate support in a third period following the second period. In the third period, the radio frequency power is not supplied. In the third period, the negative direct-current voltage is set to generate ions in a chamber by secondary electrons that are emitted by causing ions in the chamber to collide with a substrate.

Plasma processing method and plasma processing apparatus

A forming method of a component used in a plasma processing apparatus includes irradiating an energy beam to a source material of the component while supplying the source material based on a surface state of the component.

Forming method of component and substrate processing system

A forming method of a component for use in a plasma processing apparatus includes irradiating, while supplying a source material of a first ceramic and a source material of a second ceramic different from the first ceramic, an energy beam to the source material of the first ceramic and the source material of the second ceramic.

Forming method of component and plasma processing apparatus

A film forming apparatus is disclosed. The apparatus comprises a chamber; an exhaust unit configured to reduce the pressure in the chamber to a predetermined vacuum level; a holder disposed in the chamber and configured to hold a film forming target member on which a film is to be formed; a supply unit configured to supply a film forming material containing silicon to a surface of the film forming target member; and a heat source configured to perform heating at the predetermined vacuum level to melt the supplied film forming material.

Film forming apparatus and method for manufacturing part having film containing silicon

A plasma processing system includes a chamber, a gas supply unit, a gas exhaust unit, a separating unit, a boost unit and an accumulation unit. The chamber is configured to process a target substrate by plasma of a gaseous mixture of a rare gas and a processing gas. The gas supply unit is configured to supply the rare gas and the processing gas into the chamber. The gas exhaust unit is configured to exhaust a gas containing the rare gas from the chamber. The separating unit is configured to separate the rare gas from the gas exhausted by the gas exhaust unit. The boost unit is configured to boost the rare gas separated by the separating unit. The accumulation unit is configured to accumulate the rare gas boosted by the boost unit and supply the accumulated first rare gas to the gas supply unit.

Plasma processing method

A method includes estimating a replacement time of a consumable part of a processing device, specifying a timing after substrate processing of the processing device is completed in a period before the replacement time as a replaceable timing of the consumable part, estimating a movement time period required for the part transporting device to move to a position of the processing device requiring the replacement, and estimating a preparation time period required for preparation until the part transporting device moved to the position of the processing device requiring the replacement becomes a state in which the consumable part is replaceable. The method further includes transmitting a replacement instruction to the part transporting device at a timing before a timing that is earlier than the replaceable timing by a total time of the movement time period and the preparation time period, and instructing the replacement of the consumable part.

Processing system and method using transporting device facilitating replacement of consumable part

An apparatus includes a plasma processing container; a workpiece placement table disposed in the plasma processing container; a dielectric member having a facing surface that faces the workpiece placement table; an antenna provided on a surface of the dielectric member opposite to the facing surface and configured to introduce an induced electric field for plasma excitation into the plasma processing container via the dielectric member; an electromagnet group disposed along an outer circumference of the plasma processing container and configured to form a magnetic field in the plasma processing container; and a controller configured to control magnitudes of electric currents flowing through respective electromagnets of the electromagnet group differently from each other, to generate a magnetic gradient along a circumferential direction in the magnetic field that exists only in an outer circumferential space in the plasma processing container.

Plasma processing apparatus

Growing community of inventors

Nirasaki, Japan

Kazuya Nagaseki