Kabushiki Kaisha Toshiba

Kazuya Mori

Kenichi Otsuka

Katsuya Okumura

Tohru Watanabe

Mari Otsuka

Tomonori Kitakura

An Al alloy interconnection layer is deposited on a silicon oxide layer, and a first carbon layer is formed on the Al alloy interconnection layer. Then, the first carbon layer and the Al alloy interconnection layer are patterned, thereby forming a first interconnection layer consisting of the Al alloy interconnection layer and the first carbon layer. Sequentially, a second carbon layer is formed on the first interconnection layer and the silicon oxide layer. The second carbon layer is entirely etched by the RIE method, thereby leaving the second carbon layer only on side surfaces of the first interconnection layer. A high temperature layer made of SiO.sub.2 is deposited on the second carbon layer, the first interconnection layer and the silicon oxide layer. Thereafter, the high temperature layer is etched back until the first carbon layer is exposed, thus being flattened. An interlayer insulating layer is deposited on the high temperature layer and the first interconnection layer.

Method of manufacturing a semiconductor device having multi-layered

An inter-level insulation film is formed on a first-level interconnection layer and part of the inter-level insulation film which lies on the first-level interconnection layer is etched to form a contact hole. After a natural oxidation film formed on the surface of part of the first-level interconnection layer which is exposed in the contact hole is removed, the resultant structure is exposed to a gas atmosphere containing halogen to purify the surface of the inter-level insulation film. After this, a contact plug is deposited and formed on the first-level interconnection layer which is exposed in the contact hole by the selective CVD method to fill in the contact hole. A second-level interconnection layer is formed on the inter-level insulation film and the first-level and second-level interconnection layers are electrically connected to each other via the contact plug.

Contact plug forming method

Method of manufacturing a semiconductor device having reliable

A gas purification apparatus has two gas purification units which are alternately operated. A gas purification capacity measuring means includes a means including valves for separating a target gas purification unit from a line, an evacuating means for evacuating the separated gas purification unit at a high vacuum, a means including a supply tank for supplying a predetermined very small amount of an impurity gas to an inlet of the high-vacuum separated gas purification unit, an auxiliary tank (e.g., a pressure reduction tank, a metering tank, and a pressure reduction valve), and a vacuum gauge for measuring a change in pressure at the outlet upon supply of the impurity gas to the inlet. In the gas purification apparatus having gas purification units each incorporating a getter material, the gas purification capacity of each gas purification unit can be more accurately and easily measured.

Gas purification capability measuring method for gas purification

A method and an apparatus for evaluating the gas purifying ability of a gas purifier are described. The method for evaluating the gas purifying ability comprises the steps of sealing the gas purifier while reducing the inner gas pressure of the gas purifier, releasing a desirable impurity gas shut within a tank at a higher inner gas pressure than the inner gas pressure of the gas purifier, to the sealed gas purifier, and measuring the gas releasing ability of the impurity gas to the gas purifier.

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Yokohama, Japan

Kazuya Mori