Canon Kabushiki Kaisha

Other

Fujitsu Corporation

Kazuya Masu

Kazuo Tsubouchi

Nobuo Mikoshiba

Tadahiro Ohmi

Nobumasa Suzuki

Yoshio Satoh

Tomohiko Shibata

Fumio Yamagishi

Seiichi Hata

Akira Shimokohbe

Tadashiro Ohmi

Yohei Hiura

Hideki Matsuhashi

A variable inductor includes an insulating substrate (), a thermally softenable spiral coil () provided on the insulating substrate (), and a pair of input/output terminals () each connected electrically to a respective end of the coil (). Preferably, the coil () is made from a non-crystalline thin film metallic glass which softens in a supercooled liquid phase.

Variable inductor and method for adjusting inductance of same

In a code division multiple communication system which prevents the dropout of a whole packet and does not require the generation of a carrier from a received signal, under bad communication path, by generating an orthogonal code with chip synchronization from a correlation peak of a synchronization code sequence output from a surface acoustic wave matched filter, a preamble division of a spectrum spread signal is composed of plural synchronization burst. Each synchronization burst is composed of a synchronization packet division having the Barker code of 11 chips and a dummy division. The period of one synchronization burst (T) is set equally to the period of one symbol in a data division (T) which is modulated by the orthogonal sequential code of 64 chips. When the correlation peak of at least one from among plural synchronization code sequences is detected, the orthogonal code can be generated in accordance with the start timing of the first symbol in the data division.

Code division multiple access communication system

Process for forming amorphous titanium silicon nitride on substrate

A process and apparatus for forming an Al film of good quality according to the CVD method utilizing the reaction between alkyl aluminum hydride and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of Al. Pressure in a deposition chamber is maintained from 10.sup.-3 to 760 Torr. Alkyl aluminum hydride and hydrogen gas are introduced at a partial pressure from 1.5.times.10.sup.-5 to 1.3.times.10.sup.-3 of the pressure in the chamber. Aluminum is deposited on a substrate in the chamber by heating the substrate sufficiently to decompose the alkyl aluminum hydride.

Process for forming deposited film by use of alkyl aluminum hydride

A process for forming a deposited film on a substrate according to the chemical vapor deposition method comprises previously forming excited species of a gas phase compound containing atoms which become constituents constituting said deposited film, supplying the excited species onto the surface of said substrate and effecting photoirradiation on said substrate surface, thereby forming the deposited film through the surface reaction.

Chemical vapor deposition apparatus

A gas-feeding device for feeding a starting gas for deposition-film-formation by the chemical vapor deposition method, comprising a container having a space for discharging the starting gas containing an organometallic compound by introduction of a carrier gas; a gas-introducing means connected to the container for introducing a carrier gas is described. A plurality of openings for introducing the organometallic compound into the container is also provided, wherein each opening is part of an atomizer employing a piezoelectric element to eject the organometallic compound in a mist state into the container where the carrier gas passes through the space, and a container is provided for storing the organometallic compound.

Gas feeding device for controlled vaporization of an organanometallic

A chemical vapor deposition process is disclosed comprising the steps of forming liquid droplets of a liquid raw material; injecting the liquid droplets through a plate member opening placed opposite to the surface of the substrate to vaporize the liquid droplets; and supplying a reaction gas that reacts with the vaporized raw material; and depositing a thin film on the substrate.

Process for chemical vapor deposition of a liquid raw material

A gas-feeding device for feeding a starting gas for forming a deposited film by the chemical vapor deposition method, comprising a storage area for an organometallic compound having a high viscosity, wherein the storage area has a space for discharging a starting gas containing the organometallic compound by introducing a carrier gas into the storage area. The carrier gas is introduced into the organometallic gas via a gas-introducing member having a number of openings. An ultrasonic oscillator is provided in the storage area to generate cavitation in the organometallic compound. A deposited-film forming apparatus incorporating the gas-feeding device is also described.

Gas feeding device for controlled vaporization of an organometallic

Process for forming deposited film

A process for thin film formation comprises selectively irradiating with an energy ray a substrate to the surface of which a surface treatment for providing hydrogen atoms is applied to thereby form an irradiated region and a non-irradiated region on the surface of the substrate, and forming a thin film selectively on the non-irradiated region.

Process for thin film formation

A semiconductor circuit device wiring is provided in which the wiring connected to a semiconductor element is composed of a crystalline material. The crystal axis direction along which nearest neighboring atoms in a single crystal constituting the crystalline material are arranged and the electric current direction through the wiring are crossed with each other at an angle of 22.5.degree. or less.

Semiconductor circuit device wiring with F.C.C. structure, plane

A gas feeding device for feeding to a reaction vessel a starting gas for film formation by chemical vapor deposition. The gas feeding device is connected to a container which contains an organometallic compound, and has a plurality of gas introducing openings for introducing a carrier gas into the container for carrying vaporized organometallic compound into the reaction vessel. The gas feeding device includes an accelerating device which selects a carrier gas introducing route into the container through at least one of the plurality of gas introducing openings for accelerating the generation of the starting gas.

An apparatus for vaporizing a liquid raw material comprises a nozzle with an open tip end for ejecting a liquid raw material into a heated gas atmosphere as liquid droplets and a heated plate with a small opening disposed in front of the nozzle, a space opposite to that occupied by the nozzle with respect to the plate being evacuated.

Apparatus for vaporizing liquid raw material and apparatus for forming

By providing a deposited film formation method in which aluminum or a metal composed mainly of aluminum of good quality is selectively deposited according to the CVD method utilizing an alkyl aluminum hydride and hydrogen, and then pure aluminum or a metal composed mainly of aluminum is non-selectively deposited, it becomes possible to form an electroconductive film of good quality within fine openings or on an insulating layer.

Deposited film formation method utilizing selective deposition by use of

A process for forming a deposition film comprising aluminum comprises the steps of: treating chemically a surface of a substrate having an electron-donative surface and a non-electron-donative surface so as to terminate the electron-donative surface with hydrogen atoms, and thereafter placing the substrate in a space for deposition film formation; introducing gas comprising alkylaluminum hydride and hydrogen gas into the space for deposition film formation; and forming an aluminum film selectively on the electron-donative surface by maintaining the substrate at a temperature in the range of from not lower than the decomposition temperature of the alkylaluminum hydride to not higher than 450.degree. C.

Growing community of inventors

Sendai, Japan

Kazuya Masu