Komatsu Corporation

Kazuya Kuriyama

Takayuki Furukoshi

Yoichiro Hanada

Yasuhide Higo

Eichi Manabe

Minoru Yoshimoto

Wataru Kataoka

Toru Kihara

Yoichi Yasue

Youichi Yasue

Disclosed is a counterweight which is filled with a heavy-weight concrete containing, instead of currently used iron ores, a heavy-weight aggregate that scarcely causes the material segregation from cement paste and which can be produced at a low cost and is effectively enhanced in the filling factor of heavy-weight concrete into a case. A counterweightcomprises a caseand heavy-weight concrete filled therein, wherein the heavy-weight concrete contains a heavy-weight fine aggregate containing 20 mass % or more of aggregate particles having particle diameters of less than 0.15 mm and 20 mass % or more of aggregate particles having particle diameters of 2.5 mm to less than 5 mm.

Counterweight

The heat of arc plasma generated in arc welding is used to provide a welding method for a Si-based material. The method of the present invention is capable of welding a Si-based material, which is difficult to weld by conventional methods due to its brittle nature and high electric resistance. In an argon gas atmosphere, a tungsten electrode is used as a cathode. A water cooling copper sheet and plate is used as an anode. An arc is generated between this pair of electrodes. The arc length is gradually extended, and a pair of Si-based materials are near an arc column. Fusion welding of a weld zone is carried out while rotating the Si-based materials around an axis.

Welding method of an Si-based material

A temperature control device with heat conduction properties such as heat homogeneity, responsiveness or the like is fabricated by improving flatness. In a method of fabricating a temperature control device () equipped with a temperature control element () configured by soft soldering a thermionic element () between the opposed electrodes () and () and a pair of heat conduction plates () and () disposed respectively on outside surfaces of respective insulating substrates () and () of the relevant temperature control device as well as electrodes () and () are formed respectively on opposing surfaces of a pair of insulating substrates () and () disposed in opposed positions, the heat conduction plateis disposed on the outside surface of the insulating substrateafter soft soldering of the thermionic elementis performed, the insulating substratehas the flexibility, in the soft soldering of the thermionic element, the soft soldermixed with copper powder which is a layer thickness control member is used, and the soft soldering is carried out while adding the predetermined pressure.

Method of fabricating temperature control device

A welding process for welding a Cu material to a Ti material includes interposing a tertiary component between the Ti material and the Cu material. The tertiary component is of a type of metal that, with Cu, forms a compound which is liquified at a temperature below the eutectic temperature of Ti and Cu. The above materials are heated and welded at temperature of (700 through 887&deg; C.). The temperature selected is below the eutectic temperature of the Ti and Cu. The finished material forms a sputtering backing plate for a sputtering. A target member, bonded to the Cu material side of the backing plate, completes the sputtering target. In one embodiment, the proportion of the tertiary metal is achieved by controlling a thickness of the tertiary metal deposited on the Cu material. In another embodiment, the proportion of the tertiary metal is achieved by controlling the thickness of a layer of powder of the tertiary material deposited between the Cu and Ti materials.

Welding process for Ti material and Cu material, and a backing plate for a sputtering target

A backing plate of Ti for supporting a Ti sputtering target is formed of at least two components welded together. The backing plate is welded by interposing a Cu or Zr foil or powder between faces to be welded, and then heating the assembly to a reaction temperature high enough to melt one of the Ti and Cu or Zr to produce a liquid phase. The heating temperature is retained for a time long enough to permit diffusion of the Cu or Zr into the Ti to produce a liquid phase diffusion weld. By permitting diffusion to occur, a separate metallic compound is not produced at the welding face. In effect welding is accomplished without producing a welding face, whereby no interface exists in the finished weld. The resulting weld has a strength substantially equal to the strength of the Ti material, and very good welding qualities.

Backing plate and its manufacturing process

Two overlapped semiconductor materials are welded by a melt welding under the influence of a heat source of high energy density. The energy output of the heat source is ramped up slowly at the beginning of welding and ramped down slowly at completion of welding. In one embodiment the semiconductor materials are preheated before welding. In another embodiment, the effective position of the heat source on the semiconductor materials is periodically deflected.

Welding method for semiconductor materials

Si material, which has been considered to be very brittle, and hard to bend, is heated to at least its brittle-ductile transition temperature. A bending moment is applied to a heated portion of the Si material so that a slip deformation is generated. Whereby it is possible to perform bending, and to greatly improve a degree of freedom for machining the Si material. The Si material has a brittle-ductile transition temperature which transfers from a brittle to a ductile state at its brittle-ductile transition temperature. At the transition temperature or more, the Si material is in a state that a slip can to be generated between its crystals in response to a bending torque applied thereto. Thus, when a bending moment is applied to the heated portion of the Si material which is heated to the transition temperature or more, a slip is generated between lattices or between crystal grains in the heated portion, so that the Si material is deformed.

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Osaka, Japan

Kazuya Kuriyama