Tokyo Electron Limited

Kazuya Kitamura

Satoshi Takagi

Mitsuhiro Okada

Tatsuya Yamaguchi

Koji Yoshii

Hiroyuki Hayashi

Toshihiko Takahashi

Hsiulin Tsai

Masafumi Shoji

There is provided a film forming method including: adsorbing fluorine onto a substrate on which a region in which a nitride film is exposed and a region in which an oxide film is exposed are provided adjacent to each other by supplying a fluorine-containing gas to the substrate, and forming a stepped surface on a side surface of the oxide film by selectively etching the nitride film, among the nitride film and the oxide film, so as to cause a surface of the nitride film to be more deeply recessed than a surface of the oxide film; and after the adsorbing the fluorine onto the substrate and forming the stepped surface, selectively forming a semiconductor film on the nitride film, among the nitride film and the oxide film, by supplying a raw material gas including a semiconductor material to the substrate.

Film forming method and film forming apparatus

Provided is a heat insulation structure used for a vertical heat treatment apparatus that performs a heat treatment on a substrate. The vertical heat treatment apparatus includes: a processing container having a double tube structure including an inner tube and an outer tube closed upward, the processing container having an opening at a lower end thereof; a gas supply section and exhaust section provided on a lower side of the processing container; a lid configured to introduce or discharge the substrate into or from the opening and to open/close the opening; and a heating section provided to cover the processing container from an outside. The heat insulation structure is provided between the inner tube and the outer tube.

Heat insulation structure at lower end of vertical heat treatment apparatus and vertical heat treatment apparatus including heat insulation structure thereof

Growing community of inventors

Yamanashi, Japan

Kazuya Kitamura