Matsushita Electric Industrial Co., Ltd.

Osaka University

Nanophoton Corporation

Matsushita Electric Ind., Ltd.

Kazuya Kikuchi

Shuichi Kameyama

Hiroyuki Sakai

Hiroshi Shimomura

Tadao Komeda

Katsumasa Fujita

Satoshi Kawata

Shogo Kawano

Masaoki Kajiyama

Shin Mizukami

Mizuki Segawa

Tsutomu Fujita

Minoru Kobayashi

Yuichirou Hori

Hideki Ueno

The present invention relates to a nonlinear fluorescent molecule that generates a nonlinear fluorescence reaction by incidence of excitation light. This nonlinear fluorescence molecule includes donors and, and an acceptor that is coupled to the donors and. As the donor is excited by the incidence of the excitation light, electric charge moves from the donor to the acceptor. Then, the donor and the acceptor form a charge separated state. In a state in which the charge separated state is maintained, the donor fluoresces when transiting from an excited state to a ground state.

Nonlinear luminescent molecule, fluorescent stain, and observation method

Provided is a nonlinear optical material, an optical recording material, an optical recording method, a photosensitive material, a photopolymerization initiator, and a photosensitizer. One exemplary aspect of the present invention is a photosensitive material used for photolithography for forming a pattern by irradiating a photoresist with excitation light which includes a donor moleculethat is excited by the excitation light, and an acceptor moleculethat is excited by energy transfer or charge transfer from the excited donor

Optical recording material, optical recording method, photosensitive material and method

A method for fabricating a bipolar or field effect-type integrated circuit transistor is provided in which non-crystalline semiconductor films and semiconductive regions formed in a single crystal semiconductor substrate and containing high concentrations of impurities are efficiently connected with improved electric characteristics while suppressing the influence of an increase in connection resistance caused by growth of a natural oxide film. Moreover, when a first non-crystalline semiconductor film is removed from a dielectric oxide film serving as a field film and a second non-crystalline semiconductor film is formed as a ribbon-shaped pattern on the exposed field film, a resistor of high accuracy can be formed. An interconnection system having resistors of a high accuracy and a fine size is also disclosed.

Method for fabricating semiconductor devices

A first semiconductor region is of a first conduction type and forms a transistor collector. A second semiconductor region is of a second conduction type and forms a transistor base. The second semiconductor region extends in the first semiconductor region. A third semiconductor region is of the first conduction type and forms a transistor emitter. The third semiconductor region extends in the second semiconductor region. A fourth semiconductor region is of the first conduction type and has a first portion and a second portion. The first portion extends in a part of the first semiconductor region below an edge of the third semiconductor region, and the second portion extends from the first semiconductor region into a part of the second semiconductor region outward of the edge of the third semiconductor region to limit a width of the transistor base.

Method of fabricating semiconductor device by forming doped regions that

A method for fabricating a bipolar or field effect-type integrated circuit transistor is provided in which non-cyrstalline semiconductor films and semiconductive regions formed in a single crystal semiconductor substrate and containing high concentrations of impurities are efficiently connected with improved electric characteristics while suppressing the influence of an increase in connection resistance caused by growth of a natural oxide film. Moreover, when a first non-crystalline semiconductor film is removed from a dielectric oxide film serving as a field film and a second non-crystalline semiconductor film is formed as a ribbon-shaped pattern on the exposed field film, a resistor of high accuracy can be formed. An interconnection system having resistors of a high accuracy and a fine size is also disclosed.

Method for fabricating bipolar semiconductor devices

A semiconductor device such as a Bi-CMOS having vertical or lateral bipolar transistors and MOS transistors is disclosed. The MOS transistors include a gate electrode made of a first conductive thin film, and sidewall spacers formed on the sides of the gate electrode and consisting of at least one deposition film. The vertical bipolar transistors include an emitter electrode made of a second conductive thin film, and an emitter diffusion window formed in the deposition film which is disposed under the emitter electrode. The lateral bipolar transistors include a base width defining region for defining the base width, and an insulation film formed between the base width defining region and the collector and emitter, and consisting of the deposition film.

Semiconductor device and method of manufacturing the same

A semiconductor integrated circuit device includes first and second grooves extending in a silicon semiconductor substrate, a shallow groove extending between the first and second grooves and contiguous with the first and second grooves, and insulating material occupying the first and second deep grooves and said shallow groove. Accordingly, by forming grooves having two different depths, the deep groove can be filled without increasing the thickness of the insulating layer, and moreoever, an insulating isolation region having a flat upper surface can be obtained.

Semiconductor integrated circuit and its manufacturing method

A method of fabrication of a semiconductor device by forming a thin film pattern in the emitter region, forming a base lead-out electrode self-aligningly by using this thin film pattern, and also forming a fine graft base region and emitter region, and an oxide film for isolating the emitter region and base region, whereby the emitter diffusion layer and active base diffusion layer are formed in a shallow depth of diffusion by heat diffusion from the semiconductor film in which ions are implanted.

Fabrication method of semiconductor device

Method for the production of an LSI circuit device, in which method an organic compound film such as photoresist films is suitably treated to become a heat resistant film and it is used in various production processes as a mask pattern at a temperature of more than 200.degree. C. without deforming the original size of the mask pattern.

Growing community of inventors

Osaka, Japan

Kazuya Kikuchi