Sumitomo Electric Industries, Limited

A.l.m.t. Corporation

Kazuya Kamitake

Hirohiko Nakata

Masuhiro Natsuhara

Kazutaka Sasaki

Kouhei Shimoda

Harutoshi Ukegawa

Yoshishige Takano

Yugaku Abe

Akira Fukui

Shin-ichi Yamagata

Kouichi Takashima

Shinichi Yamagata

A configuration for a substrate for a semiconductor device which makes it possible to achieve further stabilization of the voltage for driving a semiconductor element () to be mounted is provided. The substrate for a semiconductor device is provided with a base () and an electrically insulating film () formed on at least a portion of the surface of this base (). The base () is made of one type of material selected from the group consisting of an alloy including copper and tungsten, an alloy including copper and molybdenum, an alloy including copper, tungsten and molybdenum, a composite material including aluminum and silicon carbide, and a composite material including silicon and silicon carbide. The electrically insulating film () includes plural layers made of at least one type of film selected from the group consisting of a diamond-like carbon film, an aluminum oxide film and a silicon oxide film.

Substrate for semiconductor device and semiconductor device

A composite material that consists mainly of ceramic and semi-metal, that is high in thermal conductivity, that is light in weight, and that has high compatibility in coefficient of thermal expansion (CTE) with a semiconductor element and another member comprising ceramic; a member comprising this composite material; and a semiconductor device comprising the member. The composite material has a structure in which the interstices of a three-dimensional network structure comprising ceramic are filled with a semi-metal-containing constituent produced by deposition after melting, has a CTE of 6 ppm/&deg; C. or less, and has a thermal conductivity of 150 W/m&middot;K or more. The semiconductor device comprises the composite material. The composite material can be obtained by filling the pores of a porous body consisting mainly of ceramic with a semi-metal-containing constituent.

Composite material and semiconductor device using the same

Aluminium nitride ceramics and method for preparing the same

Aluminium nitride ceramics improved in heat radiation property used as a substrate for integrated circuits and package material, comprising a sintered article consisting mainly of aluminium nitride and having a thermal conductivity higher than 100.multidot.W/m.multidot.K at room temperature and a surface layer consisting mainly of aluminium nitride or oxide glass deposited on the sintered article. A paste of aluminium nitride powder or oxide glass powder is coated on a surface of the sintered article of aluminium nitride and then is sintered to prepare a dense smooth surface layer.

A material for a semiconductor substrate comprising an aluminum-silicon alloy containing from 50% to 80% by weight of silicon and having a thermal conductivity of 0.28 cal/cm.sec..degree. C. or higher, a coefficient of thermal expansion of 12.times.10.sup.-6 /.degree. C. or smaller and a density of 2.5 g/cm.sup.3 or lower. This material is produced by molding an Al--Si alloy powder, which has been obtained through rapid solidification by atomization, to form a compact and then consolidating the compact by means of forging, sintering, etc. The substrate material may have an Al or Al alloy covering layer at least one surface thereof and, further, as necessary, an insulating or plating layer on the covering layer. The thus obtained substrate material is lightweight and has a suitable coefficient of thermal expansion for a substrate as well as a high thermal conductivity. Therefore, a semiconductor device with high performance and reliability can be obtained using such substrate material.

Semiconductor substate with improved thermal conductivity

Aluminum nitride ceramics and method for preparing the same

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Itami, Japan

Kazuya Kamitake