Mitsubishi Electric Corporation

Japan Tobacco Inc.

Kazuya Ishibashi

Takuya Shiraishi

Yuichi Furudono

Atsushi Narazaki

Yasuhiro Kagawa

Katsutoshi Sugawara

Kensuke Taguchi

A semiconductor device has a cell region, a dividing region dividing the cell region in an expanding direction of a stacking fault band, and a termination region, and includes in a dividing region, a semiconductor layer including a drift region of a first conductivity type and a second well region of a second conductivity type provided in an upper portion of the drift region, a second interlayer insulating film provided on the semiconductor layer, and a source electrode provided on the second interlayer insulating film. The second interlayer insulating film has two second contact holes aligned in an expanding direction of stacking fault band and electrically connecting the source electrode to the second well region. The second well region is formed as one region continuous in the expanding direction of stacking fault band in the region interposed between the two second contact holes in top view.

Semiconductor device and power conversion apparatus

A flavor aspirator includes: a weight-concentrated part that is provided at a position off the mouthpiece end and closer to the mouthpiece end side than to a midpoint position between the mouthpiece end and the distal end, and that accounts for at least approximately half of a total weight of the flavor aspirator. A value of (a length from the mouthpiece end to the center of gravity)/(a total length defined by a length from the mouthpiece end to the distal end) is in a range of 0.20 to 0.45.

Weight-balanced flavor aspirators

Flavor aspirator

A drift layer contains first conductivity type impurities. A well region contains second conductivity type impurities. A source region is provided on the well region and contains the first conductivity type impurities. A well contact region is in contact with the well region, contains the second conductivity type impurities, and has an impurity concentration on the second surface higher than the impurity concentration on the second surface in the well region. A gate electrode is provided on a gate insulating film. A Schottky electrode is in contact with the drift layer. A source ohmic electrode is in contact with the source region. A resistor is in contact with the well contact region and has higher resistance per unit area than the source ohmic electrode.

Silicon carbide semiconductor device and power conversion apparatus

Growing community of inventors

Tokyo, Japan

Kazuya Ishibashi