Disco Corporation

Ebara Corporation

Toyota Jidosha Kabushiki Kaisha

Denso Corporation

Sato Holdings Kabushiki Kaisha

Mirise Technologies Corporation

Absize, Inc.

Disco Corproation

Disco Corporattion

Kazuya Hirata

Yoko Nishino

Kunimitsu Takahashi

Ryohei Yamamoto

Kentaro Iizuka

Hayato Iga

Asahi Nomoto

Takashi Mori

Hiroshi Morikazu

Hiroyuki Kato

Isao Umeda

Motohiko Nohmi

Shunichiro Hirosawa

Shin Tabata

Naoki Omiya

Yutaka Kobayashi

Satoshi Yamanaka

Akira Goto

Tamami Takahashi

Kazuo Watanabe

Toshiyuki Sakai

Yukio Morishige

Noboru Takeda

Hiroshi Kitamura

Yusaku Ito

Masanori Goto

Masatake Nagaya

Hiroshi Masuhara

Yasuyoshi Yubira

Naoki Murazawa

Teruaki Kumazawa

Tsuyoshi Asahi

Yujiro Sudo

Shuichi Torii

Kazuki Mori

Tomoki Yoshino

Teruki Sugiyama

Isamu Oh

Sen-ichi Ryo

Koyo Honoki

Kazuyuki Hinohara

Yuji Nagumo

Karl Heinz Priewasser

Yasushi Kawai

Motomi Kitano

Mato Hattori

Akio Ishiguro

Tetsu Go

Ayumi Kurihara

Hironobu Ozawa

Hideo Iwata

Haruki Matsuo

A water production system includes a filter unit that filters water to produce clear water, an ultraviolet light irradiator that irradiates, with ultraviolet light, the clear water produced by the filter unit, thereby degrading organic matter in the clear water, an ion exchange resin unit that purifies the clear water, in which the organic matter has been degraded by the ultraviolet light irradiator, into pure water, and a deaerated water production unit that deaerates the pure water to produce deaerated water.

Wafer production system and wafer manufacturing method

A processing apparatus includes a chuck table for holding a bonded wafer thereon, a grinding unit for grinding the bonded wafer, a cleaning unit for cleaning the bonded wafer, and a processing unit for removing a beveled portion of an outer circumferential end portion of the bonded wafer before the grinding unit grinds the bonded wafer. The processing unit includes a support for supporting the bonded wafer with a surface thereof being exposed and a laser beam applying unit for emitting a laser beam having a wavelength transmittable through the wafer. The laser beam applying unit applies the laser beam to the wafer supported on the support, from the exposed surface, while positioning a focused spot thereof within the outer circumferential excessive region of the wafer, to form a modified layer in the wafer along which to remove the beveled portion from the wafer.

Wafer processing apparatus

An ingot is processed by applying exciting light, and detecting fluorescence occurring from an upper surface of the ingot. A distribution of the number of photons of the fluorescence on the upper surface of the ingot is stored as two-dimensional data in association with XY coordinate positions, and a Z-coordinate position at which the two-dimensional data is obtained is also stored. A laser beam forms a peeling layer by irradiating the ingot while positioning the condensing point of the laser beam at a depth corresponding to the thickness of a wafer from the upper surface of the ingot. A wafer is separated from the ingot with the peeling layer as a starting point, and three-dimensional data is generated representing the distribution of the number of photons of the fluorescence in the whole of the ingot on the basis of two-dimensional data at each Z-coordinate position of the ingot.

Processing method and processing apparatus for ingot

A first peel-off layer extending along a side surface of a truncated cone that has a first bottom surface positioned near a face side of a wafer and a second bottom surface positioned within the wafer and smaller in diameter than the first bottom surface, and a second peel-off layer extending along the second bottom surface of the truncated cone are formed in the wafer. Then, external forces are exerted on the wafer thicknesswise of the wafer, thereby dividing the wafer along the first peel-off layer and the second peel-off layer that function as division initiating points.

Method of processing wafer

A monocrystalline silicon wafer fabricated such that a particular crystal plane, e.g., a crystal plane (100), included in crystal planes {100} is exposed on each of face and reverse sides of the monocrystalline silicon wafer is irradiated with a laser beam along a first direction parallel to the particular crystal plane and inclined to a particular crystal orientation, e.g., a crystal orientation [010], included in crystal orientations <100> at an angle of 5° or less, thereby forming a peel-off layer that functions as separation initiating points between a part of the monocrystalline silicon wafer that belongs to the face side thereof and a part of the monocrystalline silicon wafer that belongs to the reverse side thereof.

Method of processing monocrystalline silicon wafer

After separation layers are formed inside a single-crystal silicon ingot, a single-crystal silicon substrate is split off from the single-crystal silicon ingot with use of these separation layers as the point of origin. This can improve the productivity of the single-crystal silicon substrate compared with the case of manufacturing the single-crystal silicon substrate from the single-crystal silicon ingot by a wire saw.

Manufacturing method of single-crystal silicon substrate

A store system includes a position information acquisition unit that acquires position information of an RFID medium attached to an item and position information of a visitor terminal carried by a visitor, an event detection unit that detects an event that the RFID medium or the visitor terminal enters or leaves a predetermined area in a store space based on the acquired position information, an event information storage unit that stores event information including an ID that identifies the RFID medium or the visitor terminal, information about the predetermined area based on the position information, and a detection time of the event, and a status determination unit that determines a status, which is a state of the item or is an action content of the visitor, based on the event information.

Store system, status determination method, and non-transitory computer-readable medium

A peeling layer is formed by applying a laser beam only to a central region of a workpiece other than a peripheral region extending inward from the peripheral edge of the workpiece by a predetermined distance. In this case, the application of the laser beam does not form the peeling layer in the peripheral region of the workpiece, and the formation of an ablation trace on the outer peripheral surface of the workpiece is prevented. As a result, it is possible to reduce a probability of occurrence of chipping in the peripheral region of a wafer peeled off from the workpiece when the wafer is subjected to a post-process.

Wafer producing method

Irradiation conditions for a laser beam to respective ones of a plurality of regions included in the upper surface of an ingot are set according to the numbers of photons of fluorescence occurring when excitation light is irradiated to the respective regions. Here, it is to be understood that the number of the photons of the fluorescence occurring from a region of an ingot depends on the concentration of an impurity doped in the ingot. A separation layer can therefore be formed at a uniform depth from the upper surface of the ingot even if regions of different impurity concentrations are included in the ingot. It is hence possible to reduce a kerf loss when wafers are sliced from an ingot.

Laser processing apparatus and laser processing method

A method of processing a SiC ingot includes a resistance value measuring step of measuring an electric resistance value of an end face of the SiC ingot, a laser beam output adjusting step of adjusting the output of a laser beam according to the electric resistance value measured in the resistance value measuring step, and a peeling belt forming step in which, while a laser beam of such a wavelength as to be transmitted through the SiC ingot is being applied to the SiC ingot with a focal point of the laser beam positioned at a depth corresponding to the thickness of a wafer to be formed, the SiC ingot and the focal point are put into relative processing feeding in an X-axis direction to form a belt-shaped peeling belt in the inside of the SiC ingot.

SiC ingot processing method and laser processing apparatus

A wafer having a first surface, an opposite second surface, and an outer circumferential surface that includes a curved part curved outward in a protruding manner is separated into two wafers. Part of the wafer is removed along the curved part, and a separation origin is formed inside the wafer by positioning the focal point of a laser beam with a wavelength having transmissibility with respect to the wafer inside the wafer and executing irradiation with the laser beam while the focal point and the wafer are relatively moved in such a manner that the focal point is kept inside the wafer. The wafer is separated into two wafers by an external force.

Separation method of wafer

A method of manufacturing a chip formation wafer includes: forming an epitaxial film on a first main surface of a silicon carbide wafer to provide a processed wafer having one side adjacent to the epitaxial film and the other side; irradiating a laser beam into the processed wafer from the other side of the processed wafer so as to form an altered layer along a surface direction of the processed wafer; and separating the processed wafer with the altered layer as a boundary into a chip formation wafer having the one side of the processed wafer and a recycle wafer having the other side of the processed wafer. The processed wafer has a beveling portion at an outer edge portion of the processed wafer, and an area of the other side is larger than an area of the one side in the beveling portion.

Processed wafer and method of manufacturing chip formation wafer

A processing method for processing an SiC ingot includes a peel-off zone forming step of applying a processing pulsed laser beam having a wavelength transmittable through the ingot to the ingot while positioning a focused spot of the processing pulsed laser beam at a depth corresponding to a thickness of a wafer to be peeled off from the ingot, to form belt-shaped peel-off zones each including cracks in the ingot, a reflected beam detecting step of applying an inspecting laser beam having a wavelength transmittable through the ingot and reflectable from cracks of the peel-off zones and detecting an intensity of a beam reflected by the cracks, and a processing laser beam output power adjusting step of adjusting an output power of the processing pulsed laser beam to keep the intensity of the reflected beam detected in the reflected beam detecting step within a predetermined range.

Processing method and laser processing apparatus including imaging detector for SiC ingot

A wafer producing apparatus detects a facet area from an upper surface of an SiC ingot, sets X and Y coordinates of plural points lying on a boundary between the facet area and a nonfacet area in an XY plane, and sets a focal point of a laser beam having a transmission wavelength to SiC inside the SiC ingot at a predetermined depth from the upper surface of the SiC ingot. The predetermined depth corresponds to the thickness of the SiC wafer to be produced. A control unit increases the energy of the laser beam and raises a position of the focal point in applying the laser beam to the facet area as compared with the energy of the laser beam and a position of the focal point in applying the laser beam to the nonfacet area, according to the X and Y coordinates.

Wafer producing method and laser processing apparatus

An SiC ingot forming method includes: a holding step of holding by a chuck table a cut section of a primitive SiC ingot cut from an SiC ingot growth base; a planarization step of grinding an end surface of the primitive SiC ingot held by the chuck table, to planarize the end surface; a c-plane detection step of detecting a c-plane of the primitive SiC ingot from the planarized end surface; a first end surface forming step of grinding the planarized end surface, to form a first end surface inclined at an off angle relative to the c-plane; and a second end surface forming step of holding the first end surface by the chuck table and grinding the cut section of the primitive SiC ingot in parallel to the first end surface, to form a second end surface.

SiC ingot forming method

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Tokyo, Japan

Kazuya Hirata