Matsushita Electric Industrial Co., Ltd.

Kazutsune Miyanaga

Akiyoshi Tamura

Keiichi Murayama

Masanobu Nogome

Yoshitaka Kuroishi

A semiconductor device includes a substrate with a via hole. An electrode is formed on a surface of the substrate so that a portion of the electrode extends through the via hole. A photosensitive resin is formed over the surface so as to cover an aperture of the via hole.

Semiconductor device including a photosensitive resin covering at least a portion of a substrate having a via hole

A GaAs substrateis rotated, a photosensitive silicone resistis applied on a surface of the GaAs substrateon which an aperture of a holeto be a via hole, and an inside of the holeto be the via hole is filled in with the photosensitive silicone resistNext, the GaAs substrateis further rotated, changing the number of revolutions (rpm), and the photosensitive silicone resiston the GaAs substrate is flattened. Next, a reverse side of the GaAs substrate is grinded, the holeto be the via hole penetrates the GaAs substratefrom the surface to the reverse side and the via holeis formed. Next, a reverse side electrodeis formed on the reverse side of the GaAs substrateNext, the GaAs sustrateis divided chip by chip and chips are laid on a substrate for assemblyvia an adhesive metal

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Okayama, Japan

Kazutsune Miyanaga