Tokyo Electron Limited

Tokyo Electron Kabushiki Kaisha

Tokyo Electron Tohoku Kabushiki Kaisha

Kazutsugu Aoki

Yasushi Yagi

Mitsuru Ushijima

Hironori Yagi

Wataru Okase

Junichi Arami

Wataru Ohkase

Masaaki Hasei

Masamichi Nomura

In an anodization apparatus and an anodization method for electrochemically treating a target substrate by irradiating the target substrate with light, treatment of a large target substrate can be made possible with smaller constituent elements. The electrical contact with the target substrate by a contact member is realized by a plurality of contact members or by the movement of a contact member to change the electrical contact position. The target substrate is manufactured in advance so as to have such a structure that portions thereof to be in contact with the plural contact members are connected to portions of a conductive layer on a treatment part thereof respectively. When the combination of this target substrate and the contact member(s) is used, and the electric current is passed through a part of the contact members, using a changeover switch, or the electric current passed through the contact member is applied to a portion of the conductive layer of the target substrate by the movement of the contact member, it is made possible to reduce the value of the electric current necessary for the treatment to an amount required only for the portion of the treatment part.

Anodization device and anodization method

An anodic oxidation apparatus and an anodic oxidation method are provided that enable uniform photoirradiation of a treatment part of a target substrate, thereby realizing enhancement in uniformity of anodic oxidation in the surface of the target substrate. The anodic oxidation apparatus includes: a lamp that emits light; a target substrate holder provided at a position reached by the emitted light and capable of holding the target substrate; a cathode electrode that is provided on the way of the emitted light to reach the target substrate and that has an opening portion to allow light to pass therethrough and has a conductor section not transmitting light; and a vibrating mechanism to periodically vibrate a spatial position of one of the cathode electrode, the lamp, and the target substrate holder. While the positional relationship among the three of the lamp, the cathode electrode, and the target substrate holder holding the target substrate is roughly maintained, the spatial position of at least one of the three is periodically vibrated, thereby dispersing the shadow of the cathode electrode on the target substrate with time.

Anodic oxidizer, anodic oxidation method

A heat treating apparatus comprises a process chamber within which a wafer is subjected to a heat treatment. A supporting plate for supporting the wafer is arranged within the process chamber. A process gas is supplied from above into the process chamber. A main heating means for heating the wafer is arranged below the process chamber, with a transmitting window interposed therebetween. The main heating means includes a plurality of heating sources for irradiating the supporting plate with heat rays so as to heat the wafer indirectly and a rotatable table having the heating sources arranged on the front surface thereof. The heat treating apparatus also comprises an auxiliary heating means for compensating for an uneven temperature caused on the surface of the wafer by the main heating means. The heating source of the auxiliary heating means is arranged on the surface of the rotatable table together with the heating sources of the main heating means, and the heat output from the heating source of the auxiliary heating means can be controlled independently of the heat output from the heating sources of the main heating means.

Heating apparatus, and processing apparatus

Wafer processing apparatus with a processing vessel, upper and lower

A single wafer heat treatment apparatus in which an object to be treated placed on a susceptor supported on a heat insulating member is heat-treated by indirectly heating the object to be treated by means of heating lamps disposed under the susceptor, characterized in that a gas entry preventive member for preventing process gas from being turned about the back surface of the susceptor is provided on a peripheral edge portion of the back surface of the susceptor. With this, process gas having entered the back surface of the susceptor is consumed by the adherence of a formed film to the surface of the gas entry preventive member.

Single wafer heat treatment apparatus

In conducting a plurality of kinds of surface-treatments on objects to be treated, concentration of produced gases in exhaust gas discharged from a reaction vessel are detected, and data of the detected concentrations are compared with reference data stored in a control unit to continuously control and process the respective surface-treatments. As a result, processing control can be performed suitably for the respective kinds of surface-treatments, and different kinds of surface-treatments can be continuously conducted by one and the same surface-treatment device.

Growing community of inventors

Kanagawa, Japan

Kazutsugu Aoki