Sumitomo Chemical Company, Limited

Mitsubishi Tanabe Pharma Corporation

Sii Nanotechnology Inc.

Sanofi-aventis

Seiko Instruments Inc

Hitachi Cable, Inc.

Hitachi High-tech Science Corporation

Sanofi

Mitsubishi Pharma Corporation

Sciocs Company Limited

Mitsubishi Chemical Corporation

Hitachi Metals, Ltd.

Sanofi-synthelabo

Kanto Kagaku Kabushiki Kaisha

Nec Corporation

Kazutoshi Watanabe

Kenji Shibata

Fumimasa Horikiri

Kazufumi Suenaga

Akira Nomoto

Fumiaki Uehara

Masatsugu Shigeno

Masaki Noguchi

Kenji Fukunaga

Toshiyuki Kohara

Aya Shoda

Hiroyoshi Yamamoto

Shinsuke Hiki

Daiki Sakai

Masatoshi Yasutake

Masato Iyoki

Ryoichi Ando

Masahiro Okuyama

Yoshiteru Shikakura

Kazuki Nakayama

Yoshihiro Usui

Keiichi Aritomo

Satoshi Yokoshima

Masafumi Watanabe

Kazunori Ando

Kenji Kuroiwa

Atsushi Uemoto

Naoya Watanabe

Jonathan Reid Frost

Osamu Takaoka

Shigeru Wakiyama

Tatsuya Miyatani

Adrien Tak Li

Akira Inoue

Takehiro Yamaoka

Pascal Barneoud

Mitsuru Ooizumi

Jesus Benavides

Jeremy Pratt

Keiichi Arimoto

Takehiro Yoshida

Makoto Kawamura

Akihiro Miyauchi

Mitsuru Hasegawa

Yoshiharu Shirakawabe

Toshihiko Sakuhara

Antonio Almario Garcia

Kazuo Chinone

Masamichi Fujihira

Ken-ichi Saito

Hiroshi Bando

Akihiko Honma

Hiroshi Tokumoto

Itaru Kitajima

Toshio Doi

Fumiki Sakai

Toshiaki Kuroda

Hiroshi Iwamura

Wataru Mizutani

Hiroumi Momota

Noriko Chiba

Masayuki Shimura

Haruki Nakagawa

Takuya Nakaue

Masaki Tsuchihashi

Shigeo Okayama

Shin-ichi Kusaka

Meguro Takeshi

Koichi Yamakoshi

Antonio Almario Carcia

Akihiko Hidaka

Hiroyuki Endo

Rie Kawamoto

Masayuki Iwasa

Suenaga Kazufumi

A piezoelectric stack, including: a substrate; an electrode film; and a piezoelectric film comprising an alkali niobium oxide of a perovskite structure represented by a composition formula of (KNa)NbO(0<x<1), wherein an average light transmittance through the piezoelectric film in a wavelength region of visible light and near-infrared ray is 65% or more.

Piezoelectric stack, piezoelectric element, and method of manufacturing piezoelectric stack

There is provided a laminated substrate having a piezoelectric film, including: a substrate; a first electrode film provided on the substrate; and a piezoelectric film provided on the first electrode film, wherein an oxide film containing an oxide represented by a composition formula of RuOor IrO, is provided on the piezoelectric film.

Laminated substrate having piezoelectric film, element having piezoelectric film and method for manufacturing this laminated substrate

There is provided a piezoelectric stack, including: a substrate; an electrode film; and a piezoelectric film which is comprised of alkali niobium oxide of a perovskite structure represented by a composition formula of (KNa)NbO(0&#x3c;x&#x3c;1), wherein the piezoelectric film comprises crystals having a grain size with a standard deviation of 0.42 &#x3bc;m or less.

There is provided a piezoelectric laminate, including: a substrate; and a piezoelectric film formed on the substrate, wherein the piezoelectric film contains an alkali niobium oxide represented by a composition formula of (KNa)NbO(0&#x3c;x&#x3c;1), having a perovskite structure, and contains a metallic element selected from a group consisting of Cu and Mn at a concentration of more than 0.6 at % and 2.0 at % or less.

Piezoelectric laminate, method of manufacturing piezoelectric laminate and piezoelectric element

There is provided a laminated substrate having a piezoelectric film, including: a substrate; and a piezoelectric film provided on the substrate interposing a base film, wherein the piezoelectric film has an alkali niobium oxide based perovskite structure represented by a composition formula of (KNa)NbO(0&#x3c;x&#x3c;1) and preferentially oriented in (001) plane direction, and a sound speed of the piezoelectric film is 5100 m/s or more.

There is provided a piezoelectric laminate, including: a substrate; and a piezoelectric film formed on the substrate, wherein the piezoelectric film is a film containing an alkali niobium oxide of a perovskite structure represented by a composition formula of (KNa)NbO(0&#x3c;x&#x3c;1), and having Young's modulus of less than 100 GPa.

Piezoelectric laminate, method of manufacturing the piezoelectric laminate and piezoelectric device

There is provided a laminated substrate with a piezoelectric thin film, comprising: a substrate; an electrode film formed on the substrate; and a piezoelectric thin film formed on the electrode film, wherein the piezoelectric thin film is made of an alkali niobium oxide represented by a composition formula of (KNa) NbO(0&#x3c;x&#x3c;1), having a perovskite structure, and oriented preferentially in (001) plane direction, and contains a metallic element selected from a group consisting of Mn and Cu at a concentration of 0.2 at % or more and 0.6 at % or less.

Laminated substrate with piezoelectric thin film, piezoelectric thin film element and method for manufacturing this element

To avoid applying overload on both a probe and a sample surface, and to reduce time for measuring irregular shapes on the sample surface in performing an intermittent measurement method, provided is a scanning probe microscope including: a cantilever having a probe attached thereto, the scanning probe microscope being configured to scan a sample surface by intermittently bringing the probe into contact with the sample surface; and a control device configured to perform a first operation of bringing the probe and the sample surface into contact with each other, and a second operation of separating the probe and the sample surface from each other after the first operation. The control device executes the second operation by thermally deforming the cantilever.

Scanning probe microscope and scanning method using the same

This method for manufacturing a lead-free niobate-system ferroelectric thin film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask pattern formation step of forming an etch mask in a desired pattern on the niobate-system ferroelectric thin film; and a ferroelectric thin film etching step of shaping the niobate-system ferroelectric thin film into a desired fine pattern by wet etching using an etchant comprising: a predetermined chelating agent including at least one selected from EDTMP, NTMP, CyDTA, HEDP, GBMP, DTPMP, and citric acid; an aqueous alkaline solution containing an aqueous ammonia solution; and an aqueous hydrogen peroxide solution.

Method for manufacturing niobate-system ferroelectric thin-film device

There is provided a ferroelectric thin-film laminated substrate, including a substrate, and further including a lower electrode layer, a ferroelectric thin-film layer, an upper electrode intermediate layer, and an upper electrode layer being sequentially stacked on the substrate, in which: the lower electrode layer is made of platinum or a platinum alloy; the ferroelectric thin-film layer is made of a sodium potassium niobate (typical chemical formula of (KNa)NbO, 0.4&#x2264;x&#x2264;0.7); the upper electrode layer is made of aluminum or an aluminum alloy; the upper electrode intermediate layer is made of a metal that has less oxidizability than titanium and can generate an intermetallic compound with Aluminum; and a part of the upper electrode intermediate layer and a part of the upper electrode layer are alloyed.

Ferroelectric thin-film laminated substrate, ferroelectric thin-film device, and manufacturing method of ferroelectric thin-film laminated substrate

A scanning probe microscope has a cantilever having a probe at a tip of the cantilever, a driving unit that performs a separating operation for separating one of the sample and the probe from the other at a speed exceeding a response speed of the cantilever from a state where the probe is in contact with the surface of the sample, a determination unit that determines that the probe is separated from the surface of the sample when vibration of the cantilever at a predetermined amplitude is detected at a resonant frequency of the cantilever during the separating operation, and a driving control unit that stops the separating operation when the determination unit determines that the probe is separated from the surface of the sample and relatively moves the probe and the sample to a position where the probe is located on a next measuring point of the sample.

Scanning probe microscope and scanning method thereof

There is provided a ferroelectric thin-film laminated substrate, including a substrate, and further including a lower electrode layer, a ferroelectric thin-film layer, an upper electrode adhesive layer, and an upper electrode layer being sequentially stacked on the substrate, in which: the lower electrode layer is made of platinum or a platinum alloy; the ferroelectric thin-film layer is made of a sodium potassium niobate (typical chemical formula of (KNa)NbO, 0.4&#x2264;x&#x2264;0.7); the upper electrode layer is made of gold; the upper electrode adhesive layer is made of a metal that has less oxidizability than titanium and can make a solid solution alloy without generating an intermetallic compound with gold; and a part of the upper electrode adhesive layer and a part of the upper electrode layer are alloyed.

Ferroelectric thin-film laminated substrate, ferroelectric thin-film device,and manufacturing method of ferroelectric thin-film laminated substrate

This method for manufacturing a ferroelectric thin film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a ferroelectric thin film made of a sodium potassium niobate on the lower electrode film; an upper electrode film formation step of forming an upper electrode film on the ferroelectric thin film; and an upper electrode film etching step of shaping the upper electrode film into a desired micro-pattern by performing a reactive ion etching process on the upper electrode film. The upper electrode film etching step is a step of calculating a rate of change of sodium emission intensity in an ion plasma generated by the reactive ion etching process and determining that the etching process is completed when the rate of change falls below a predetermined threshold.

Method for manufacturing ferroelectric thin film device

There is provided a method for manufacturing a ferroelectric thin film device including: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a ferroelectric thin film made of a potassium sodium niobate on the lower electrode film; a ferroelectric thin film etching step of shaping the ferroelectric thin film into a desired micro-pattern by etching; and a thin film laminated substrate cleaning step of cleaning the substrate provided the ferroelectric thin film having a desired micro-pattern as a whole with a predetermined cleaning solution after the ferroelectric thin film etching step. The predetermined cleaning solution is a solution mixture containing hydrofluoric acid and ammonium fluoride, the hydrofluoric acid in the solution mixture having a molarity of 0.5 M or more and less than 5 M.

Growing community of inventors

Tokyo, Japan

Kazutoshi Watanabe