Canon Kabushiki Kaisha

Kazutoshi Torashima

Takahiro Akiyama

Takahisa Kato

Yasuhiro Shimada

Yasushi Nakata

Toshio Tomiyoshi

Ayako Kato

Takehiko Soda

Yukio Furukawa

Shinichiro Shimizu

Masahiro Kobayashi

Atsushi Kandori

Kenichi Nagae

Kazunari Fujii

Suguru Miyagawa

Shinichiro Watanabe

Hideo Kobayashi

Susumu Yasuda

Toshiyuki Ogawa

Yuji Kasanuki

Kenji Hasegawa

Kazuhiko Kato

Masanori Shibata

Hiroo Akabori

Ayako Maruyama

A photoelectric conversion apparatus includes pixels having adjacent first and second pixels. The pixels each include, in a semiconductor layer of a substrate, a photoelectric conversion portion that generates charges, a charge holding portion that holds the charges, and a floating diffusion layer that converts the charges into a voltage. At least parts of the charge holding portion in the first pixel and the floating diffusion layer in the second pixel, parts of the charge holding portion in the first pixel and the charge holding portion in the second pixel, and/or parts of the floating diffusion layer in the first pixel and the floating diffusion layer in the second pixel overlap each other without physically touching each other in a depth direction of the substrate in a state where a region for separating the at least parts of the charge holding portions and the floating diffusion layers is provided therebetween.

Photoelectric conversion apparatus having overlapped parts of charge holding portions, imaging system, and movable body

A first conductive pattern and a third conductive pattern are joined to each other in a junction plane, and a second conductive pattern and a fourth conductive pattern are joined to each other in the junction plane, and an insulation layer is arranged at least in one of spaces between the first conductive pattern and the second conductive pattern and between the third conductive pattern and the fourth conductive pattern.

Semiconducting device, and appliance having the semiconducting device

An imaging device includes a pixel unit having a plurality of pixels forming a plurality of rows and a plurality of columns, and a readout unit that divides the pixel unit into a plurality of pixel blocks based on a division pattern, each pixel block including at least two pixels, and combines signals from the at least two pixels included in one pixel block to generate one signal for each of the pixel blocks. A detection unit detects a change in signal values between a plurality of signals sequentially generated by the readout unit of the one pixel block. A control unit controls the readout unit to output a signal individually from each of the pixels included in at least one pixel block in response to detecting a change in the signal values, and controls the readout unit so that the division patterns are different in at least two frames.

Imaging device, imaging system, and drive method of imaging device

A photoelectric conversion apparatus, including: a semiconductor substrate having a first surface on which light is incident and a second surface; a photoelectric converting unit configured to convert incident light into charge; a charge holding unit configured to hold charge; a light shielding unit provided in a trench of the semiconductor substrate, the trench being formed between the photoelectric converting unit and the charge holding unit; and a transfer gate formed on a second surface side of the semiconductor substrate so as to overlap with the light shielding unit when viewed in a plan view for the second surface of the semiconductor substrate and configured to transfer the charge at the photoelectric converting unit to the charge holding unit, wherein a distance between the light shielding unit and the photoelectric converting unit is shorter than a distance between the light shielding unit and the charge holding unit.

Photoelectric conversion apparatus, imaging system, and moving body

A capacitive micromachined ultrasonic transducer having a wide reception band is provided. The capacitive micromachined ultrasonic transducer includes an element including a first sub-element and a second sub-element each including a cell. The cell includes a vibrating membrane that includes one of two electrodes formed with a spacing therebetween and that is vibratably supported. The capacitive micromachined ultrasonic transducer further includes a first detection circuit, a second detection circuit, and a combining circuit that combines a signal from the first detection circuit and a signal from the second detection circuit. The first sub-element is electrically connected to the first detection circuit, and the second sub-element is electrically connected to the second detection circuit. The first detection circuit and the second detection circuit have different cut-off frequencies.

Capacitive micromachined ultrasonic transducer and information acquisition apparatus including capacitive micromachined ultrasonic transducer

A semiconductor device comprising a plurality of photoelectric conversion elements arrayed on a substrate, a readout unit configured to read out signals from the plurality of photoelectric conversion elements, and a light source unit driver configured to drive a light source unit, wherein the plurality of photoelectric conversion elements include a first element configured to receive incident light and a second element configured to be shielded from the incident light, and the light source unit driver drives the light source based on both a signal from the first element and a signal from the second element read out by the readout unit.

Semiconductor device and optical encoder comprising a light source driver to drive a light source based on signals from an incident light received first element and an incident light shielded second element

A method of producing an electromechanical transducer includes forming an insulating film on a first electrode, forming a sacrificial layer on the insulating film, forming a first membrane on the sacrificial layer, forming a second electrode on the first membrane, forming an etching-hole in the first membrane and removing the sacrificial layer through the etching-hole, and forming a second membrane on the second electrode, and sealing the etching-hole. Forming the second membrane and sealing the etching-hole are performed in one operation.

Electromechanical transducer and method of producing the same

An electrostatic capacitance type transducer includes one or more elements. The one or more elements each include a plurality of cell groupseach including a cellincluding a first electrodeand a second electrodearranged with a gap therebetween, the second electrode being electrically connected to a shared signal extraction electrode. In the cell group, each of the cells has an equal wiring length from the shared signal extraction electrode. The electrostatic capacitance of the plurality of cell groups, the wiring resistance between two adjacent cell groups, the number of cell groups in the element, and the central frequency of the element satisfy a predetermined relationship to increase transmission efficiency or reception sensitivity.

Electrostatic capacitance type transducer

Provided is a capacitive transducer including an element including a plurality of cells supported such that a vibrating membrane including one of a pair of electrodes formed with an gap inbetween is capable of vibration, wherein a distance between a pair of electrodes of a cell in an end portion of the element is greater than that between a pair of electrodes of a cell in a middle portion of the element.

Capacitive transducer and method of manufacturing same

A probe is provided in which penetration of an acoustic medium into a support layer of an optical reflection member through a pinhole or a scratch on an optical reflection layer is suppressed, occurrence of a solvent crack is suppressed, and noise due to photoacoustic waves that occurs on a receiving surface can be suppressed. The probe includes an element having at least one cell in which a vibration film containing one electrode out of two electrodes that are provided so as to interpose a space therebetween is vibratably supported. The probe further includes a support layer disposed on the vibration film, and an optical reflection layer disposed on the support layer. A protection layer against an acoustic medium is formed on the optical reflection layer.

Probe and object information acquisition apparatus using the same

A side lobe in a capacitive transducer is reduced. Provided is a capacitive transducer including an element including a plurality of cells supported such that a vibrating membrane including one of a pair of electrodes formed with an gap between the electrodes is capable of vibration, wherein a distance between cells in an end portion of the element is greater than a distance between cells in a middle portion of the element.

An electromechanical transducer includes a first electrode; a silicon oxide film disposed on the first electrode; and a vibration film including a silicon nitride film disposed on the silicon oxide film with a space therebetween and a second electrode disposed on the silicon nitride film so as to oppose the first electrode.

Growing community of inventors

Yokohama, Japan

Kazutoshi Torashima