Renesas Technology Corp.

Other

Renesas Electronics Corporation

Kazutoshi Ohmori

Tsuyoshi Tamaru

Hiroyuki Maruyama

Naohumi Ohashi

Kiyohiko Sato

Hideo Aoki

Hiroshi Miyazaki

Takayuki Oshima

Sadayuki Okudaira

Takeshi Saikawa

Tetsuo Saito

Ryohei Maeno

A semiconductor device and a manufacturing method thereof are provided for the improvement of the reliability of copper damascene wiring in which a film between wiring layers and a film between via layers are comprised of an SiOC film with low dielectric constant. A film between wiring layers, a film between wiring layers, and a film between via layers are respectively comprised of an SiOC film, and stopper insulating films and a cap insulating film are comprised of a laminated film of an SiCN film A and an SiC film B. By doing so, it becomes possible to reduce the leakage current of the film between wiring layers, the film between wiring layers, and the film between via layers, and also possible to improve the adhesion of the film between wiring layers, the film between wiring layers, and the film between via layers to the stopper insulating films and the cap insulating film.

Semiconductor device and manufacturing method thereof

An interlayer dielectric film that surrounds via holes for connecting wirings of a second wiring layer and the wirings of third wiring layer is constituted of a dielectric material having a relatively smaller Young's modulus compared with the Young's modulus of a dielectric material constituting a dielectric film that surrounds wiring grooves in dual damascene wirings, which can improve the heat resistance and electromigration resistance of the dual damascene wirings.

Method of forming semiconductor device including silicon oxide with fluorine, embedded wiring layer, via holes, and wiring grooves

Manufacturing method of semiconductor device

Growing community of inventors

Higashihiroshima, Japan

Kazutoshi Ohmori