Shin-Etsu Chemical Co., Ltd.

National Institute of Advanced Industrial Science and Technology

Kazutoshi Nagata

Shoji Akiyama

Yoshihiro Kubota

Makoto Kawai

Yuji Tobisaka

Masayuki Tanno

Shigeru Konishi

Makoto Fujimaki

Koji Kato

Provided is a method of manufacturing a composite substrate equipped with a piezoelectric single-crystal film having good film-thickness uniformity and not causing deterioration in properties even if ion implantation is performed. The method of manufacturing a composite substrateequipped with a piezoelectric single-crystal filmaccording to the present invention includes the steps of: (a) subjecting a piezoelectric single-crystal substratemade of lithium tantalate or lithium niobate to ion implantation treatment to form an ion implantation layer, (c) bonding the surface of the piezoelectric single-crystal substratehaving the ion implantation layerthereon to a temporary bonding substrate, (d) separating the piezoelectric single-crystal substrateinto the ion implantation layerand the remaining portion of the substrate to form a piezoelectric single-crystal filmon the temporary bonding substrate, (f) bonding a supporting substrateto the surface of the piezoelectric single-crystal filmopposite to a bonded surface of the temporary bonding substrate, and (g) separating the temporary bonding substrate from the piezoelectric single-crystal film

Method for manufacturing composite substrate provided with piezoelectric single crystal film

The present invention relates to a method for producing a group III compound substrate, including: a base substrate forming step for forming a group III nitride base substrate by a vapor phase synthesis method; a seed substrate forming step for forming a seed substrate on the base substrate; and a group III compound crystal forming step for forming a group III compound crystal on the seed substrate by a hydride vapor phase epitaxy method. The group III compound substrate of the present invention is produced by the method for producing a group III compound substrate of the present invention. According to the present invention, a large-sized and high-quality group III compound substrate can be obtained at a low cost while taking advantage of the high film formation rate characteristic of the hydride vapor phase epitaxy method.

Method for producing a group III compound crystal by hydride vapor phase epitaxy on a seed substrate formed on a group III nitride base substrate

The present invention includes: transferring a C-plane sapphire thin filmhaving an off-angle of 0.5-5&#xb0; onto a handle substrate composed of a ceramic material having a coefficient of thermal expansion at 800 K that is greater than that of silicon and less than that of C-plane sapphire; performing high-temperature nitriding treatment on the GaN epitaxial growth substrateand covering the surface of the C-plane sapphire thin filmwith a surface treatment layermade of AlN; having GaN grow epitaxially on the surface treatment layer; ion-implanting a GaN film; pasting and bonding together the GaN film-side surface of the ion-implanted GaN film carrier and a support substrate; performing peeling at an ion implantation regionin the GaN filmand transferring a GaN thin filmonto the support substrate; and obtaining a GaN laminate substrate

Method for producing GaN laminate substrate having front surface which is Ga polarity surface

A sapphire composite base material including: an inorganic glass substrate, a polyvinyl butyral or silica intermediate film on the inorganic glass substrate, and a single crystal sapphire film on the intermediate film. There is also provided a method for producing a sapphire composite base material, including steps of: forming an ion-implanted layer inside the single crystal sapphire substrate; forming a polyvinyl butyral or silica intermediate film on at least one surface selected from the surface of the single crystal sapphire substrate before or after the ion implantation, and a surface of an inorganic glass substrate; bonding the ion-implanted surface of the single crystal sapphire substrate to the surface of the inorganic glass substrate via the intermediate film to obtain a bonded body; and transferring a single crystal sapphire film to the inorganic glass substrate via the intermediate film.

Sapphire composite base material and method for producing the same

An object of the present invention is to provide a method of manufacturing a composite substrate including a piezoelectric layer with less Li amount variation and a support substrate. A method of manufacturing a composite substrate of the present invention includes a step of performing ion implantation into a piezoelectric substrate, a step of bonding the piezoelectric substrate and the support substrate, a step of separating the bonded substrate, at an ion-implanted portion of the piezoelectric substrate, into the piezoelectric layer bonded to the support substrate and the remaining piezoelectric substrate after the step of bonding the piezoelectric substrate and the support substrate, and a step of diffusing Li into the piezoelectric layer after the separating step.

Composite substrate and method of manufacturing composite substrate

A thermally oxidized heterogeneous composite substrate provided with a single crystal silicon film on a handle substrate, said heterogeneous composite substrate being obtained by, prior to a thermal oxidization treatment at a temperature exceeding 850&#xb0; C., conducting an intermediate heat treatment at 650-850&#xb0; C. and then conducting the thermal oxidization treatment at a temperature exceeding 850&#xb0; C. According to the present invention, a thermally oxidized heterogeneous composite substrate with a reduced number of defects after thermal oxidization can be obtained.

Thermally oxidized heterogeneous composite substrate and method for manufacturing same

A hybrid substrate has an SOI structure having a good silicon active layer, without defects such as partial separation of the silicon active layer is obtained without trimming the outer periphery of the substrate. An SOI substrate is obtained by sequentially laminating a first silicon oxide film and a silicon active layer in this order on a silicon substrate. A terrace portion that does not have the silicon active layer is formed in the outer peripheral portion of the silicon substrate surface. A second silicon oxide film is formed on the silicon active layer surface of the SOI substrate The bonding surfaces of the SOI substrate and a supporting substrate that has a thermal expansion coefficient different from that of the SOI substrate is subjected to an activation treatment. The SOI substrate and the supporting substrate are bonded with the second silicon oxide film being interposed therebetween.

Method for producing hybrid substrate, and hybrid substrate

A method for producing SOS substrates which can be incorporated into a semiconductor production line, and is capable of producing SOS substrates which have few defects and no variation in defects, and in a highly reproducible manner, or in other words, a method for producing SOS substrates by: forming an ion-injection region () by injecting ions from the surface of a silicon substrate (); adhering the ion-injection surface of the silicon substrate () and the surface of a sapphire substrate () to one another directly or with an insulating film () interposed therebetween; and then obtaining an SOS substrate () having a silicon layer () on the sapphire substrate (), by detaching the silicon substrate in the ion-injection region (). This method is characterized in that the orientation of the sapphire substrate () is a C-plane having an off-angle of 1 degree or less.

Method for producing SOS substrates, and SOS substrate

This invention provides a method for manufacturing composite wafers in which at least two composite wafers can be obtained from one donor wafer, and in which the chamfering step can be omitted. Provided is a method for manufacturing composite wafers comprising: bonding surfaces of at least two handle wafers and a surface of a donor wafer which has a diameter greater than or equal to a sum of diameters of the at least two handle wafers and which has a hydrogen ion implantation layer formed inside thereof by implanting hydrogen ions from the surface of the donor wafer, to obtain a bonded wafer; heating the bonded wafer at 200&#xb0; C. to 400&#xb0; C.; and detaching a film from the donor wafer along the hydrogen ion implantation layer of the heated bonded wafer, to obtain the composite wafers having the film transferred onto the at least two handle wafers.

Method for manufacturing composite wafers

A detection device is disclosed which includes: a detection plate in which a silicon layer and a silicon oxide layer are arranged in this order on a silica glass substrate; and optical prism which is optically adhered to a surface of the silica glass substrate of the detection plate, where the surface is not provided with the silicon layer and the silicon oxide layer; a light-irradiation unit configured to irradiate light to the detection plate through the optical prism and arranged so that light is incident on the optical prism with a fixed incident angle; and a light-detection unit configured to detect intensity of reflected light reflected from the detection plate, wherein the detection device detects a change in dielectric constant by detecting a change in property of the reflected light.

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Annaka, Japan

Kazutoshi Nagata