National Institute of Advanced Industrial Science and Technology

Central Research Institute of Electric Power Industry

Showa Denko K.k.

Toyota Jidosha Kabushiki Kaisha

Denso Corporation

Fuji Electric Co., Ltd.

Kazutoshi Kojima

Hidekazu Tsuchida

Tomohisa Kato

Hajime Okumura

Isaho Kamata

Kenji Momose

Michiya Odawara

Tetsuya Miyazawa

Keiichi Matsuzawa

Yuuki Ishida

Keiko Masumoto

Satoshi Kuroda

Shinsuke Harada

Kenji Fukuda

Koji Nakayama

Takeshi Tawara

Ayumu Adachi

Toshiyuki Ohno

Yoshiyuki Yonezawa

Koichi Nishikawa

Fusao Hirose

Junji Senzaki

Katsunori Asano

Jun Kojima

Kentaro Tamura

Akihiro Otsuki

Ryouji Kosugi

Shiyang Ji

Satoshi Segawa

Tetsuro Hemmi

A silicon carbide epitaxial wafer () of the present invention is a silicon carbide epitaxial wafer including: a silicon carbide substrate () and a silicon carbide layer () provided on a first principal plane (A) of the silicon carbide substrate () and having a film thickness of 100 &#x3bc;m or more, wherein a warpage amount of the silicon carbide epitaxial wafer is &#x2212;20 &#x3bc;m or more and 20 &#x3bc;m or less.

Silicon carbide epitaxial wafer having a thick silicon carbide layer with small wrapage and manufacturing method thereof

A method for manufacturing an epitaxial wafer comprising a silicon carbide substrate and a silicon carbide voltage-blocking-layer, the method includes: epitaxially growing a buffer layer on the substrate, doping a main dopant for determining a conductivity type of the buffer layer and doping an auxiliary dopant for capturing minority carriers in the buffer layer at a doping concentration less than the doping concentration of the main dopant, so that the buffer layer enhances capturing and extinction of the minority carriers, the minority carriers flowing in a direction from the voltage-blocking-layer to the substrate, so that the buffer layer has a lower resistivity than the voltage-blocking-layer, and so that the buffer layer includes silicon carbide as a main component; and epitaxially growing the voltage-blocking-layer on the buffer layer.

Epitaxial wafer manufacturing method, epitaxial wafer, semiconductor device manufacturing method, and semiconductor device

To provide silicon carbide epitaxial wafer in which occurrence of giant step bunchings (GSBs) caused by basal plane dislocations (BPDs) that occur during hydrogen etching is suppressed on low off-angle silicon carbide substrate to decrease surface defect density of epitaxially grown layer to allow formation of silicon carbide semiconductor device having high reliability, method for manufacturing the wafer, and apparatus for manufacturing the wafer, and silicon carbide semiconductor device having the wafer. A silicon carbide epitaxial wafer of the present invention is such that epitaxially grown layer is disposed on silicon carbide substrate which has &#x3b1;-type crystal structure and in which (0001) Si face is tilted at greater than 0&#xb0; and less than 5&#xb0;, wherein surface defect density of the epitaxially grown layer based on giant step bunching caused by basal plane dislocation on substrate surface of the silicon carbide substrate is &#x2266;20/cm.

Silicon carbide epitaxial wafer, method for manufacturing silicon carbide epitaxial wafer, device for manufacturing silicon carbide epitaxial wafer, and silicon carbide semiconductor element

The present invention provides a semiconductor structure which includes at least a p-type silicon carbide single crystal layer having an &#x3b1;-type crystal structure, containing aluminum at impurity concentration of 1&#xd7;10cmor higher, and having thickness of 50 &#x3bc;m or greater. Further provided is a method for producing the semiconductor structure of the present invention which method includes at least epitaxial growth step of introducing silicon carbide source and aluminum source and epitaxially growing p-type silicon carbide single crystal layer over a base layer made of silicon carbide single crystal having &#x3b1;-type crystal structure, wherein the epitaxial growth step is performed at temperature conditions of from 1,500&#xb0; C. to 1,700&#xb0; C., and pressure conditions of from 5&#xd7;10Pa to 25&#xd7;10Pa.

Semiconductor structure, semiconductor device, and method for producing semiconductor structure

A silicon carbide single crystal includes nitrogen as a dopant and aluminum as a dopant. A nitrogen concentration is 2&#xd7;10cmor higher and a ratio of an aluminum concentration to the nitrogen concentration is within a range of 5% to 40%.

Silicon carbide single crystal and manufacturing method of the same

An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c-plane or a surface that inclines a c-plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of threading edge dislocation arrays that are formed in the SiC epitaxial film is 10 arrays/cmor less.

Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrate

Provided is a silicon carbide epitaxial wafer which is formed on a substrate that is less than 1&#xb0; off from the {0001} surface of silicon carbide having an &#x3b1;-type crystal structure, wherein the crystal defects in the SiC epitaxial wafer are reduced while the flatness of the surface thereof is improved.

Silicon carbide epitaxial wafer, method for producing such wafer, and semiconductor device formed on such wafer

A semiconductor device formed on a silicon carbide semiconductor substrate comprises an epitaxial layer formed on a surface sloping (or inclining) by 0 to less than 1 degree from a (000-1) face of the silicon carbide semiconductor substrate, wherein at least one of a P type semiconductor area or an N type semiconductor area is selectively formed in the epitaxial layer by ion implantation, a metal electrode is formed so as to contact a surface layer of the P type semiconductor area or the N type semiconductor area, a rectification function is shown between the metal electrode and the P type semiconductor area or the N type semiconductor area, and the semiconductor device is formed on the silicon carbide semiconductor substrate of a Schottky barrier diode or a PN type diode.

Semiconductor device

Growing community of inventors

Tsukuba, Japan

Kazutoshi Kojima