Tokyo Electron Limited

Gas-phase Growth Ltd.

Kazutoshi Iwai

Takashi Tanaka

Yuichiro Inatomi

Nobutaka Mizutani

Mitsuaki Iwashita

Koichi Yatsuda

Takeshi Nagao

Yumiko Kawano

Yusuke Saito

Keiichi Fujita

Hideaki Machida

Masato Ishikawa

Hiroshi Sudoh

A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatusincludes a substrate holding unitconfigured to hold a substrate W; a plating liquid supply unitconfigured to supply a plating liquid Mto the substrate W; and a solvent supply unitconfigured to supply a solvent Nhaving a different temperature from a temperature of the plating liquid Mto the substrate W. The solvent Nis supplied to a preset position on the substrate W from the solvent supply unitafter the plating liquid Mis supplied to the substrate W from the plating liquid supply unit

Plating method and recording medium

A substrate W having a non-plateable material portionand a plateable material portionformed on a surface thereof is prepared, and then, a catalyst is selectively imparted to the plateable material portionby performing a catalyst imparting processing on the substrate W. Thereafter, a plating layeris selectively formed on the plateable material portionby supplying a plating liquid Monto the substrate W. The plating liquid Mcontains an inhibitor which suppresses the plating layerfrom being precipitated on the non-plateable material portion

Plating method, plating apparatus and recording medium

A substrate W having a non-plateable material portionand a plateable material portionformed on a surface thereof is prepared, and then, a catalyst is selectively imparted to the plateable material portionby performing a catalyst imparting processing on the substrate W. Thereafter, a plating layeris selectively formed on the plateable material portionby performing a plating processing on the substrate W. Before the imparting of the catalyst, an organic filmis formed on the substrate W by supplying an organic liquid Lonto the substrate W.

A catalyst is imparted selectively to a plateable material portionby performing a catalyst imparting processing on a substrate W having a non-plateable material portionand the plateable material portionformed on a surface thereof. Then, a hard mask layeris formed selectively on the plateable material portionby performing a plating processing on the substrate W. The non-plateable material portionis made of SiOas a main component, and the plateable material portionis made of a material including, as a main component, a material containing at least one of a OCHgroup and a NHgroup, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.

Forming method of hard mask

A substrate W having a non-plateable material portionand a plateable material portionformed on a surface thereof is prepared, and then, a catalyst is imparted selectively to the plateable material portionby supplying a catalyst solution Nonto the substrate W. Thereafter, a plating layeris selectively formed on the plateable material portionby supplying a plating liquid Monto the substrate W. A pH of the catalyst solution Nis previously adjusted such that the plating layeris suppressed from being precipitated on the non-plateable material portionwhile being facilitated to be precipitated on the plateable material portion

A metal wiring layer can be formed within a recess of a substrate and an unnecessary plating layer is not left on a surface of the substrate. A metal wiring layer forming method includes forming a first plating layeras a protection layer at least on a tungsten or tungsten alloyformed on a bottom surfaceof a recessof a substrate; removing an unnecessary plating layerformed on a surfaceof the substrate; and forming a second plating layeron the first plating layerwithin the recess

Metal wiring layer forming method, metal wiring layer forming apparatus and recording medium

Plating apparatus, plating method, and recording medium

Forming method of hard mask, forming apparatus of hard mask and recording medium

A catalyst adsorbed on a surface of a substrate is bound to the substrate without leaving residues within a recess of the substrate. A catalyst layer forming method includes forming a catalyst layerby supplying a catalyst solutiononto a substratehaving a recessto adsorb the catalystA onto a surface of the substrate and onto an inner surface of the recess; rinsing the surface of the substrateand an inside of the recessby supplying a rinse liquid; drying the surface of the substrateand the inside of the recess. Further, by supplying a binder solutioncontaining a binderB onto the substrate, the catalystA on the surface of the substrateis bound to the substrateby the binderB.

Catalyst layer forming method, catalyst layer forming system and recording medium

A pre-treatment method of plating and a plating system can perform a uniform plating process in which sufficient adhesivity on a surface of a substrate is obtained. The pre-treatment method of plating includes a coupling layer forming process of forming a titanium-based coupling layeron the surface of the substrate with a titanium coupling agent; and a coupling layer modification process of modifying a surface of the titanium-based coupling layerwith a modifying liquid after the coupling layer forming process.

Pre-treatment method of plating, storage medium, and plating system

A pre-treatment method for plating can form a plating layer having sufficient adhesivity on an inner surface of a recess and on a surface of a substrate at an outside of the recess even when the recess has a high aspect ratio. The pre-treatment method for plating includes a preparation process of preparing the substrate having the recess; a first coupling layer forming process of forming a first coupling layerat least on the inner surface of the recess of the substrate by using a first coupling agent; and a second coupling layer forming process of forming a second coupling layerat least on the surface of the substrate at the outside of the recess by using a second coupling agent after the first coupling layer forming process.

Pre-treatment method for plating and storage medium

A present invention provide a technique for easily forming a high-quality cobalt base film, which have a small specific resistance. The present invention comprises a transportation process of a Co[i-C3H7NC(C2H5)N-i-C3H7]2, and a film formation process by decomposition of the Co[i-C3H7NC(C2H5)N-i-C3H7]2. The film formation process comprises at least a first film formation process and a second film formation process. In the first film formation process, a film formation chamber is supplied with at least NH3 and/or NH3 product compound, and is not virtually supplied with H2. In the second film formation process, the film formation chamber is supplied with at least NH3 and/or NH3 product compound, and H2. An internal pressure of the film formation chamber in the first film formation process is higher than an internal pressure of the film formation chamber in the second film formation process.

Growing community of inventors

Kumamoto, Japan

Kazutoshi Iwai