Hitachi, Ltd.

Ngk Spark Plug Company, Limited

Babcock-Hitachi Kabushiki Kaisha

International Superconductivity Technology Center

Renesas Technology Corp.

The Tokyo Electric Power Company, Incorporated

Kazutoshi Higashiyama

Tomoichi Kamo

Takaaki Suzuki

Toshiyuki Kobayashi

Kenji Yamaga

Toshihide Nabatame

Toru Koyama

Tetsuo Fujiwara

Shinpei Matsuda

Izumi Hirabayashi

Tohru Koyama

Toshiya Doi

Takahisa Ushida

Takesi Ozawa

Yutaka Yoshida

Shoji Tanaka

Shigeru Azuhata

Hironobu Kobayashi

Kunihiro Maeda

Toyotaka Yuasa

Akira Yoshinari

Kiyoshi Narato

Masahiro Komachiya

Tomoji Oishi

Norio Arashi

Yoshitaka Takahashi

Seizi Takeuchi

Tadayoshi Murakami

Kenichi Sohma

Hideyo Kodama

Tooru Inada

Susumu Yoshioka

Hiroyuki Kaku

Keizou Ohtsuka

Yoshimi Yanai

Akira Okayama

Tadahisa Masai

Teruo Kumagai

Atsuko Soeta

Tsuneyuki Kanai

Fumio Koda

Kiyoshi Hiyama

Noriyuki Imada

Masakiyo Tanikawa

Kei Kawano

Tetsurou Okano

A solid polymer electrolyte is made up of a polymer compound having a hydrocarbon aromatic group in the backbone thereof and including a side chain expressed by FORMULA 1: wherein 'n' is 1, 2, 3, 4, 5, or 6. The solid polymer electrolyte may be incorporated into a membrane and may be used in a solution for covering an electrode catalyst.

Solid polymer electrolyte, a membrane using thereof, a solution for coating electrode catalyst, a membrane/electrode assembly, and a fuel cell

A solid polymer electrolyte is made up of a polymer compound having a hydrocarbon aromatic group in the backbone thereof and including a side chain expressed by FORMULA 1:CHSOH&#x2003;&#x2003;FORMULA 1wherein 'n' is 1, 2, 3, 4, 5, or 6. The solid polymer electrolyte may be incorporated into a membrane and may be used in a solution for covering an electrode catalyst.

An object of the present invention is to provide a highly durable solid polymer electrolyte that has a deterioration resistance equal to or higher than that of the fluorine-containing solid polymer electrolytes or a deterioration resistance sufficient for practical purposes, and can be produced at a low cost. According to the present invention, there is provided a solid polymer electrolyte comprising a polyether ether sulfone that is used as an electrolyte and has sulfoalkyl groups bonded to its aromatic rings and represented by the general formula &#x2014;(CH)&#x2014;SOH.

Solid polyelectrolyte, assembly of membrane and electrodes, amd fuel cell

A semiconductor device containing a dielectric capacitor having an excellent step coverage for a device structure of high aspect ratio corresponding to high integration degree, as well as a manufacturing method therefor are provided. A dielectric capacitor of high integration degree is manufactured by forming a bottom electrodeand a top-electrodecomprising a homogeneous thin Ru film with 100% step coverage while putting a dielectrictherebetween on substrateshaving a three-dimensional structure with an aspect ratio of 3 or more by a MOCVD process using a cyclopentadienyl complex within a temperature range from 180&#xb0; C. or higher to 250&#xb0; C. or lower.

Method of forming capacitor with ruthenium top and bottom electrodes by MOCVD

A solid polymer electrolyte is made up of a polymer compound having a hydrocarbon aromatic group in the backbone thereof and including a side chain expressed by FORMULA 1:wherein 'n' is 1, 2, 3, 4, 5, or 6. The solid polymer electrolyte may be incorporated into a membrane and may be used in a solution for covering an electrode catalyst.

A ferroelectric capacitor of the type having a top electrode, a ferroelectric thin film, and a bottom electrode, is characterized in that said ferroelectric thin film is a perovskite-type oxide containing Pb and said upper and bottom electrodes contain an intermetallic compound composed of Pt and Pb. An electronic device is provided with said ferroelectric capacitor. This construction is designed to solve the following problems. In a non-volatile ferroelectric memory (FeRAM), a degraded layer occurs near the interface between the PZT and the electrode due to hydrogen evolved during processing or due to diffusion of Pb from the PZT into the electrode. A stress due to a difference in lattice constant occurs in the interface between the electrode and the ferroelectric thin film. The degraded layer and the interfacial stress deteriorate the initial polarizing characteristics of the ferroelectric capacitor and also greatly deteriorate the polarizing characteristics after switching cycles.

Ferroelectric capacitor and semiconductor device

An object of the present invention is to provide a highly durable solid polymer electrolyte that has a deterioration resistance equal to or higher than that of the fluorine-containing solid polymer electrolytes or a deterioration resistance sufficient for practical purposes, and can be produced at a low cost. According to the present invention, there is provided a solid polymer electrolyte comprising a polyether ether sulfone that is used as a electrolyte and has sulfoalkyl groups bonded to its aromatic rings and represented by the general formula &#x2014;(CH)&#x2014;SOH.

Solid polyelectrolyte, assembly of membrane and electrodes, and fuel cell

For the stabilization of the reaction, especially, for maintaining reaction temperature, the feedback control by the feedback unit is performed for to the supply of air (, oxygen, or oxidizing agent), whereas other materials are supplied by the open-loop control according to the instruction of the flow selection unit which indicates a preset value depending on the required hydrogen production volume. In addition, the continuous flow setting unit capable of changing the flow continuously is employed for the supply system of the air, whereas the flow control of the other materials is performed by use of the discrete flow setting units each of which provides the discretized flow by use of the on-off combination of two or more on-off valves.

Hydrogen producing apparatus and power generating system using it

A semiconductor device containing a dielectric capacitor having an excellent step coverage for a device structure of high aspect ratio corresponding to high integration degree, as well as a manufacturing method therefor are provided. A dielectric capacitor of high integration degree is manufactured by forming a bottom electrode and a top-electrode comprising a homogeneous thin Ru film with 100% step coverage while putting a dielectric therebetween on substrates having a three-dimensional structure with an aspect ratio of 3 or more by a MOCVD process using a cyclopentadienyl complex within a temperature range from 180&deg; C. or higher to 250&deg; C. or lower.

Semiconductor device and method for manufacturing the same

A ferroelectric element having a high Pr and a low Ec and having a good withstand voltage, which is in the form of a thin film using a ferroelectric layer containing insulating particles, is provided. The ferroelectric layer containing the insulating particles is effective to suppress leakage current caused through grain boundaries of crystals, and hence to exhibit a high Pr and a low Ec and a good withstand voltage. The ferroelectric element has a structure in which such a ferroelectric layer in the form of a thin film is sandwiched between electrodes. By incorporating the ferroelectric element in a field effect transistor structure, it is possible to realize a highly integrated semiconductor device for detecting reading or writing.

Dielectric element and manufacturing method therefor

The temperature at which an oxide dielectric thin film is formed can be made lower than conventional by reducing the concentration of oxygen in an atmosphere for forming the thin film. As a result, there can be formed an oxide dielectric thin film which has a crystal structure preferentially oriented at a crystal plane allowing a polarization axis to be directed in the vertical direction, which eliminates any reaction with an electrode material, and controls the growth of crystal grains. The use of such an oxide dielectric thin film can provide an oxide dielectric element having a high spontaneous polarization and a small coercive field. Consequently, it is possible to achieve a dielectric element having a high density of integration for detecting reading and writing operations, and a semiconductor device using the same.

Method of producing oxide dielectric element, and memory and semiconductor device using the element

The present invention provides superconductors capable of being used at temperatures to which the superconductor can be cooled in liquid nitrogen and of carrying current in a high critical current density in a magnetic field, and superconducting apparatuses employing the superconductors and more advantageous in costs than the conventional superconducting apparatuses. A superconducting wire is formed by combining a metallic body of a cubic aggregate structure and an oxide superconducting substance. The present invention provides superconductors, superconducting wires, superconducting magnets and applied superconducting apparatuses having a high superconducting critical current density. The applied super conducting apparatuses employing the superconductors or the superconducting wires in accordance with the present invention are able to operate when cooled in liquid nitrogen-and can be manufactured at costs lower than those of the conventional superconducting apparatuses.

Oxide superconducting wire and method of manufacturing the same

An oxide-based superconductor ccmprising Tl, Pb, Sr, Ca and Cu or Tl, Pb, Ba, Sr, Ca and Cu, prepared by subjecting a low melting point composition comprising the superconductor-constituting elements and a solid composition comprising the superconductor-constituting elements, prepared in advance, to reaction under melting conditions for the low melting point composition, has distinguished current pass characteristics in a high magnetic field due to improvement of electric contact among grains through reduction of non-superconductor phase, increase in crystal grain sizes (reduction of crystal boundaries), orientation of crystal and cleaning of crystal boundaries.

Oxide-based superconductor, a process for preparing the same and a wire

A method of producing a high-temperature oxide superconducting material, which comprises the steps of (a) preparing a material corresponding to an oxide superconductor of the perovskite type structure consisting essentially of a first member selected from the group consisting yttrium, lanthanoids, thallium and bismuth; at least one alkaline earth metal; copper; and oxygen and (b) heating the material in the presence of an alkali metal selected from the group consisting of potassium, sodium, rubidium and cesium to a temperature around the melting point of the alkali metal or to a higher temperature for a time sufficient to effect grain growth in the superconductor material, thereby to produce the superconductor containing the alkali metal in an amount not larger than 4 mole % based on the first member.

Oxide high-temperature superconducting material, method of preparing

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Naka, Japan

Kazutoshi Higashiyama