Mitsubishi Heavy Industries Limited

Kazuto Yoshida

Ryuichi Matsuda

Masahiko Inoue

Tadashi Shimazu

Hitoshi Sakamoto

Toshihiko Nishimori

Yuichi Kawano

Noriaki Ueda

Provided are a plasma processing apparatus and a plasma processing method, by which plasma damage is reduced during processing. At the time of performing desired plasma processing to a substrate (), a process chamber () is supplied with an inert gas for carrying in and out the substrate (), pressure fluctuation in the process chamber () is adjusted to be within a prescribed range, and plasma () of the inert gas supplied in the process chamber () is generated. The density of the plasma () in the transfer area of the substrate () is reduced by controlling plasma power to be in a prescribed range, and the substrate () is carried in and out to and from a supporting table ().

Plasma processing apparatus and plasma processing method

Provided are a plasma processing apparatus and a plasma processing method wherein particles generated due to the inner potential of an inner cylinder disposed inside of a vacuum container are reduced. The plasma processing apparatus has, inside of a metal vacuum chamber (), the inner cylinder () composed of a surface-alumited aluminum, disposes a substrate in a plasma diffusion region, and performs plasma processing. A plurality of protruding portions () in point-contact with the vacuum chamber () are provided on the lower end portion of the inner cylinder (), the alumite film () on the leading end portion () of each of the protruding portion () is removed, and the inner cylinder and the vacuum chamber () are electrically connected to each other.

A plasma CVD apparatus has a container, and channels composed of introduction grooves and circumferential grooves for different types of gases are formed within the container. The gases introduced through source gas piping, auxiliary gas piping, and cleaning gas piping are equally supplied to a plurality of supply nozzles, a plurality of auxiliary gas supply nozzles, and a plurality of cleaning gas nozzles. The configuration of the container can be simplified without complicating pipings for the gases.

Plasma treatment apparatus

A power supply antenna comprises a plurality of coils disposed concentrically. Power supply portions formed at opposite ends of the respective coils are located in different phases on the same plane such that spacing between the adjacent power supply portions is equal. The power supply antenna can generate a uniform electric field and a uniform magnetic field, although it has the plural coils.

Power supply antenna and power supply method

An electrode pattern of an electrostatic chuck includes linear portions in a radial direction and a plurality of concentric C-shaped portions branching out from the linear portions. The linear portions are disposed opposite to each other in a diametrical direction and are such that they lie on a line that is almost straight. The C-shaped portions are engaged alternately like teeth of a comb.

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Kobe, Japan

Kazuto Yoshida