Jsr Corporation

Hitachi, Ltd.

Renesas Technology Corp.

Other

Kazuto Watanabe

Sukeyoshi Tsunekawa

Miwako Nakahara

Shigeru Ohno

Takashi Yunogami

Toshiyuki Arai

Kenzou Ookita

Sugirou Shimoda

Atsushi Kobayashi

Hirokazu Sakakibara

Keisuke Kuriyama

Tomoyuki Matsumoto

Taichi Matsumoto

Hirokazu Itou

Keisuke Satou

Isao Aritome

A method for producing a plated shaped structure, includes applying a photosensitive resin composition on a substrate to form a photosensitive resin coating film. The photosensitive resin composition includes: (A) a resin whose solubility in alkali is capable of being increased by an action of an acid; (B) a photoacid generator; and (C) a compound which is capable of being decomposed by an action of an acid to form a primary or secondary amine. The photosensitive resin coating film is exposed to light. The photosensitive resin coating film is developed after the exposing to light to form a resist pattern. A plating process is performed using the resist pattern as a mask.

Method for producing plated shaped structure and photosensitive resin composition for production of plated shaped structures

A composition for forming a conductive film includes at least one of a metal salt (A1) and a metal particle (A2) as component (A) that serves as a metal source of the conductive film, and a metalloxane compound (B). The metal salt (A1) and the metal particle (A2) contain one or more metals selected from the group consisting of Ni, Pd, Pt, Cu, Ag, and Au. The metalloxane compound (B) has at least one metal atom selected from the group consisting of Ti, Zr, Sn, Si, and Al in its main chain. Preferably, the metal salt (A1) is a carboxylate containing a metal selected from the group consisting of Cu, Ag, and Ni. Preferably, the metal particle (A2) has an average particle diameter of 5 nm to 100 nm and comprises a metal selected from the group consisting of Cu, Ag, and Ni.

Composition for forming a conductive film, a conductive film, a method for producing a plating film, a plating film, and an electronic device

In a method for forming a three-dimensional interconnection, a contact plug is formed within a through hole provided in a substrate and an upper wire formed on an upper side of the substrate and a lower wire formed on a lower side are electrically connected to one another by the contact plug. A coating film is formed on an upper surface of the substrate and inner surface of the through hole by applying a metal film-forming composition containing at least one salt of and a particle of a metal to the substrate provided with the through hole. A metal film is formed by heating the coating film, and plated by filling up the through hole by depositing a conductor on the metal film by a plating process using the metal film as a seed layer. An excess conductor deposited in the plating is removed by a chemical mechanical polishing process.

Method for forming three-dimensional interconnection, circuit arrangement comprising three-dimensional interconnection, and metal film-forming composition for three-dimensional interconnection

Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their oxides, and the ozone without any damages to wafers and reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.

Process for treating solid surface and substrate surface

A pretreatment in which impurities containing carbon are removed from a conductor film formed on a substrate is performed prior to an etching treatment of the conductor film. In this pretreatment, a gas containing oxygen, nitrogen, or a nitrogen oxide is irradiated with ultraviolet rays or electromagnetic waves, and this gas is supplied to the substrate surface, which has been heated to a temperature of 200&deg; C. or lower. This allows a semiconductor device having at least one type of conductor film selected from among a ruthenium film, a ruthenium oxide film, an osmium film, and an osmium oxide film to be manufactured inexpensively and at a high level of quality.

Method for manufacturing semiconductor device having an etching treatment

Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.

Growing community of inventors

Tokyo, Japan

Kazuto Watanabe