Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

National Institute Of Advanced Industrial Science And Technology

Kazuto Takao

Takashi Shinohe

Tatsuo Shimizu

Ryosuke Iijima

Yusuke Hayashi

Johji Nishio

Kentaro Ikeda

Chiharu Ota

Masahiro Koyama

Teruyuki Ohashi

Hiroshi Kono

Tatsunori Sakano

Masamu Kamaga

Tomoaki Inokuchi

Tadashi Sakai

Masahiko Kuraguchi

Mariko Suzuki

Yusuke Kobayashi

Makoto Mizukami

Satoshi Yoshida

Tatsuya Nishiwaki

Shinya Kyogoku

Hiro Gangi

Takuo Kikuchi

Keiko Ariyoshi

Ryosuke Iljima

Hiromichi Oohashi

Yuusuke Hayashi

An electronic device has a primary loop circuit that includes a main circuit causing a current to flow in a loop shape; and a secondary loop circuit that is disposed to face the primary loop circuit at a predetermined distance, and causes an induced current generated by a magnetic field generated in the primary loop circuit to flow in a loop shape.

Electronic device and power converter

Electronic circuitry includes a resonant circuit to receive a square-wave voltage based on a first DC voltage and generate a first voltage; a first transmission circuit to transmit the first voltage via a transformer including a primary inductor and a secondary inductor; a second transmission circuit to transmit the first voltage via a first capacitor and a second capacitor, the first capacitor being electrically connected to a first end of the primary inductor, the second capacitor being electrically connected to a second end of the primary inductor; a rectifier circuit to rectify the first voltage and generate a second DC voltage, the first voltage being transmitted by the first transmission circuit or the second transmission circuit; a first switch circuit configured to connect the first transmission circuit and the rectifier circuit; and a second switch circuit to connect the second transmission circuit and the rectifier circuit.

Electronic circuit and method

A gate resistance adjustment device has a waveform input unit that inputs waveforms of a drain voltage or a collector voltage and a drain current or a collector current at least one of during which a switching device is turned on and during which the switching device is turned off, an extraction unit that extracts time required for at least one of turning on or off the switching device and a steady-state drain current or a steady-state collector current of the switching device based on the waveforms input by the waveform input unit, a calculator that calculates a gate resistance of the switching device based on the time and the steady-state drain current or the steady-state collector current that are extracted by the extraction unit, and a setting unit that sets a gate resistance calculated by the calculator in the switching device.

Gate resistance adjustment device

A power conversion circuit has an inverter circuit including a first node and a second node that output a voltage according to an input voltage, a resonant circuit connected to the first node and the second node and including a third node and a fourth node that output a resonant voltage; and an output circuit connected to the third node and the fourth node and configured to output a DC voltage, wherein the resonant circuit includes a first inductor having one end connected to the third node, a first capacitor connected between the first node and another end of the first inductor, a second capacitor connectable between the second node and the fourth node, a second inductor connectable between the third node and the fourth node, and a first switch that switches whether or not to connect the second inductor between the third node and the fourth node.

Power conversion circuit and power conversion device

A power switcher includes a first normally-off transistor that switches between interrupting and not interrupting a current path between first and second electrodes according to a drive voltage input to a first control electrode, a second normally-on transistor cascode-connected to the first transistor and including a second control electrode to which the second electrode of the first transistor is connected, a control voltage generator that generates a control voltage in accordance with a voltage between the first and second electrodes of the first transistor, and a drive voltage generator that generates a drive voltage equal to or lower than a withstand voltage of the first transistor in accordance with the control voltage.

Power switcher, power rectifier, and power converter including cascode-connected transistors

According to one embodiment, a semiconductor device includes first, second and third conductive parts, a first semiconductor region, and a first insulating part. A direction from the first conductive part toward the second conductive part is along a first direction. The first semiconductor region includes first, second, and third partial regions. A second direction from the first partial region toward the second partial region crosses the first direction. The third partial region is between the first partial region and the second conductive part in the first direction. The third partial region includes an opposing surface facing the second conductive part. A direction from the opposing surface toward the third conductive part is along the second direction. The first insulating part includes a first insulating region. At least a portion of the first insulating region is between the opposing surface and the third conductive part.

Semiconductor device having multiple conductive parts

A power conversion device includes a first switching element and a first inductor connected in series between a first terminal and a second terminal, the first inductor and a second switching element being connected in series between the second and third terminals, a switching controller that alternately turns on and off the first and second switching elements, a first capacitor connected between the first and second terminals, and a second capacitor connected between the second and third terminals. When a first full-wave rectified voltage is input, switching frequencies of the first switching element and the second switching element, an inductance of the first inductor, a capacitance of the first capacitor, and a capacitance of the second capacitor are set so that a second full-wave rectified voltage having a voltage amplitude and a phase same as the voltage amplitude and the phase of the first full-wave rectified voltage is output.

Power conversion device and power supply device

A semiconductor device according to an embodiment includes: a first transistor having a first electrode, a second electrode, and a first control electrode, the first transistor performing a switching operation; a second transistor having a third electrode electrically connected to the second electrode, a fourth electrode, and a second control electrode, the second transistor performing an analog operation; and a third transistor having a fifth electrode electrically connected to the fourth electrode, a sixth electrode, and a third control electrode.

Semiconductor device, power conversion apparatus, and vehicle

A gate resistance adjustment device has a waveform input unit that inputs waveforms of a drain voltage or a collector voltage and a drain current or a collector current at least one of during a switching device is turned on and during the switching device is turned off, an extraction unit that extracts time required for at least one of turning on or off the switching device and a steady-state drain current or a steady-state collector current of the switching device based on the waveforms input by the waveform input unit, a calculator that calculates a gate resistance of the switching device based on the time and the steady-state drain current or the steady-state collector current that are extracted by the extraction unit, and a setting unit that sets a gate resistance calculated by the calculator in the switching device.

According to one embodiment, a control circuit is connected to an element portion including a first element. The first element includes a first gate, a first collector, and a first emitter. The control circuit performs a first operation and a second operation. In at least a portion of the first operation, the control circuit causes a first current to flow from the first collector toward the first emitter. In at least a portion of the second operation, the control circuit causes a second current to flow from the first emitter toward the first collector. A first time constant of a switching of the first element in the first operation is different from a second time constant of a switching of the first element in the second operation.

Control circuit, semiconductor device, and electrical circuit device

According to one embodiment, a control circuit is connected to an element portion including a first element. The first element is an RC-IGBT. The first element includes a first gate, a first other gate, a first collector, and a first emitter. The control circuit performs a first operation and a second operation. In at least a portion of the first operation, the control circuit causes a first current to flow from the first collector toward the first emitter. In at least a portion of the second operation, the control circuit causes a second current to flow from the first emitter toward the first collector. In the second operation, the control circuit supplies a first pulse to the first gate and supplies a first other pulse to the first other gate. The first pulse has a first start time and a first end time.

According to one embodiment, a semiconductor device includes a first transistor being normally-off, a second transistor being normally-on, and a first conductive member. The first transistor includes a first gate, a first source, a first drain, and a first semiconductor member. The first semiconductor member is provided between the first gate and the first drain and between the first source and the first drain. The second transistor includes a second gate, a second source, a second drain, and a second semiconductor member. An orientation from the first semiconductor member toward the first drain is the same as an orientation from the second semiconductor member toward the second gate, toward the second source, and toward the second drain. The first conductive member electrically connects the first drain and the second source.

Semiconductor device

According to an embodiment, a switching device includes: a switching control unit that connects a first resistor between an input terminal for receiving the switching signal and a gate of a switching transistor during a first period that is an anterior half of a turn-off period of the switching transistor, and connects a second resistor between the input terminal and the gate during a second period that is a posterior half of the turn-off period; a calculating unit that calculates a first gate resistance based on a target voltage rising rate and a first operational expression, and that calculates a second gate resistance based on the permissible maximum voltage value and a second operational expression; and a resistance setting unit that sets resistances of the first resistor and the second resistor based on the first gate resistance and the second gate resistance.

Switching device, power converter device, control apparatus, and computer program product

In a method for fabricating a semiconductor substrate according to an embodiment, an SiC substrate is formed by vapor growth and C (carbon) is introduced into the surface of the SiC substrate to form an n-type SiC layer on the SiC substrate by an epitaxial growth method.

Method for fabricating semiconductor substrate, semiconductor substrate, and semiconductor device

A semiconductor module of an embodiment includes a first switching device, a first gate drive circuit controlling ON/OFF of the first switching device, a second switching device connected with the first switching device in parallel or in series, a second gate drive circuit controlling ON/OFF of the second switching device, and a control circuit controlling timing of transmitting a gate drive signal from the first gate drive circuit and transmitting a gate drive signal from the second gate drive circuit by synchronizing the first gate drive circuit and the second gate drive circuit.

Growing community of inventors

Tsukuba, Japan

Kazuto Takao