Sandisk Technologies Inc.

Kazuto Ohsawa

Yoshitaka Otsu

Kota Funayama

Ryo Kambayashi

Hisaya Sakai

A three dimensional memory device includes: an alternating stack of insulating layers and electrically conductive layers, memory openings vertically extending through the alternating stack, memory opening fill structures located in the memory openings, and a backside trench fill structure that includes a backside trench insulating spacer and a backside contact via structure. The backside contact via structure includes a first metallic nitride liner including a nitride of a first metal, a first metal core fill conductive material portion include a second metal, and a second metallic nitride liner including a nitride of the second metal located between an inner sidewall of the first metallic nitride liner and an outer sidewall of the first metal core fill conductive material portion.

Three-dimensional memory device including composite backside metal fill structures

A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers. Stepped surfaces including vertical sidewalls of the insulating layers are present in a staircase region. Pad stacks are located on the stepped surfaces. Each of the pad stacks includes an insulating pad having a same material composition as the insulating layers, and a dielectric material pad having a different material composition than the insulating layers and having sidewalls that are vertically coincident with sidewalls of the insulating pad. Memory stack structures extend through the alternating stack. Each of the memory stack structures includes a vertical stack of memory elements and a vertical semiconductor channel.

Three-dimensional memory containing a staircase with dummy steps and method of making thereof with step length control

A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, memory stack structures vertically extending through the alternating stack, a finned dielectric moat structure including a dielectric core portion vertically extending through each layer within the alternating stack and a vertical stack of dielectric fin portions laterally extending outward from the dielectric core portion, a vertical stack of insulating plates and dielectric material plates laterally surrounded by the finned dielectric moat structure, and an interconnection via structure vertically extending through the vertical stack and contacting a top surface of an underlying metal interconnect structure.

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Yokkaichi, Japan

Kazuto Ohsawa