Other

Ps4 Luxco S.a.r.l.

Kazuto Mori

Kiyonori Oyu

Kensuke Okonogi

A semiconductor device capable of increasing ON current while reducing channel resistance and allowing transistors to operate independently and stably, having a fin formed to protrude from the bottom of a gate electrode trench, a gate insulating film covering the surfaces of the gate electrode trench and the fin, a gate electrode embedded in a lower part of the gate electrode trench and formed to stride over the fin via the gate insulating film, a first impurity diffusion region arranged on a first side face, and a second impurity diffusion region arranged on a second side face.

Growing community of inventors

Tokyo, Japan

Kazuto Mori