Fujitsu Corporation

Fujitsu Semiconductor Limited

Fujitsu Microelectronics Limited

Kazuto Ikeda

Tsunehisa Sakoda

Masaomi Yamaguchi

Hiroshi Minakata

Yuuta Nakaya

Hideki Yamawaki

Takafumi Kimura

Masaru Ihara

Susumu Saga

Yoshihiro Sugita

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A semiconductor device capable of suppressing a threshold shift and a manufacturing method of the semiconductor device. On a high dielectric constant insulating film, a diffusion barrier film for preventing the diffusion of metal elements from the high dielectric constant insulating film to an upper layer is formed. Therefore, the diffusion of the metal elements from the high dielectric constant insulating film to the upper layer can be prevented. As a result, a reaction and bonding between the metal elements and a Si element in a gate electrode can be suppressed near a boundary between an insulating film and the gate electrode.

Semiconductor device and manufacturing method thereof

A permeation preventing film of a silicon nitride filmis inserted between a silicon substrateand a High-k gate insulation filmto thereby prevent the High-k gate insulation filmfrom being deprived of oxygen, while oxygen anneal is performed after a gate electrode layerhas been formed to thereby supplement oxygen. The silicon nitride filmwhich is the permeation preventing film, becomes a silicon oxide nitride filmwithout changing the film thickness, whereby characteristics deterioration of the High-k gate insulation filmdue to the oxygen loss can be prevented without lowering the performance of the transistor. The semiconductor device having the gate insulation film formed of even a high dielectric constant material can be free from the shift of the threshold voltage.

Semiconductor device and method for fabricating the same

Patterning is performed in such a manner that an end portion fabricated of a second gate insulating film partially overlaps an end portion fabricated of a first gate insulating film. Then, a surface recovery treatment is performed in the aforementioned state where the first and second gate insulating films partially overlap each other.

Semiconductor device and manufacturing method of the same

A semiconductor device manufacture method has the steps of: (a) forming an interface layer of SiO or SiON on the surface of an active region of a silicon substrate; (b) forming a high dielectric constant gate insulating film such as HfSiON having a dielectric constant higher than that of silicon oxide, above the interface layer; (c) forming a gate electrode of polysilicon above the high dielectric constant gate insulating film; (d) passivating the substrate surface at least before or after the high dielectric constant gate insulating film is formed; (e) forming an insulated gate electrode structure by patterning at least the gate electrode and the high dielectric constant gate insulating film; and (f) forming source/drain regions in the active region on both sides of the insulated gate electrode structure. The semiconductor device has the high dielectric constant insulating film having a dielectric constant higher than that of silicon oxide.

Semiconductor device having high dielectric constant gate insulating layer and its manufacture method

A method of manufacturing a semiconductor device has the steps of: (a) evacuating a sputtering chamber to a pressure of 1.5&#xd7;10torr to 9&#xd7;10torr and heating a silicon substrate to a temperature of 330&#xb0; C. to 395&#xb0; C.; (b) sputtering Co on the heated silicon substrate; (c) after the step (b), forming a cap layer having a small oxygen transmission performance on the silicon substrate without exposing the silicon substrate in air; (d) after the step (c), performing primary annealing; (e) after the step (d), removing the cap layer and unreacted Co; and (f) after the step (e), performing secondary annealing by heating the silicon substrate to a temperature of 450&#xb0; C. to 750&#xb0; C.

Method of manufacturing semiconductor device having silicide layer

A thin film of a high temperature superconductive oxide of rare earth metal-alkali earth metal-copper-oxygen system or group VA metal-alkali earth metal-copper-oxygen system, which has an excellent crystallinity, particularly a single crystalline structure, is formed on a substrate by a CVD method, in which halides of the metals and an oxygen source gas are separately flowed over a substrate and caused to react with each other over the substrate, to deposit a desired superconducting oxide film.

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Kawasaki, Japan

Kazuto Ikeda