Hitachi, Ltd.

Renesas Technology Corp.

Hitachi Astemo Ltd.

Hitachi-high-technologies Corporation

Hitachi Ulsi Systems Co., Ltd.

Kazutami Tago

Takafumi Tokunaga

Hideyuki Kazumi

Ken Yoshioka

Sadayuki Okudaira

Tatsumi Mizutani

Atsushi Maekawa

Shuntaro Machida

Kazuo Nojiri

Hiroshi Kanazawa

Takashi Yunogami

Kenji Nakayama

Yuji Tsuji

Shouochi Uno

Takayuki Chikaoka

Tatehito Usui

Masahito Mori

Minoru Yamazaki

Kazue Takahashi

Tetsuo Ono

Motohiko Yoshigai

Tetsunori Kaji

Toshiyuki Yokosuka

Saburo Kanai

Naoki Sakurai

Naoshi Itabashi

Kinya Kobayashi

Wataru Yokoyama

Hiroyuki Enomoto

Satoshi Ito

Ryoji Hamasaki

Ippei Suzuki

Toshiaki Nishida

Itsuki Shimura

A rotary electric machine includes a stator including a coil, and a rotor in an inner peripheral side of the stator. The rotor core comprises a soft magnetic metal and a magnet within a magnet insertion hole, a first magnet stopper on a q axis side of the magnet in the magnet insertion hole, a magnet accommodation between the first magnet stopper on both sides of the magnet insertion hole, a first space portion communicating with the magnet insertion hole, a second space portion whose distance from the magnet is equal to or less than a thickness of the magnet and a radial length of a magnetic pole center is long, the second space portion formed on an inner peripheral side relative to the magnet, and a third space portion that has a convex shape on an inner peripheral side of a q axis of the magnet.

Rotary electric machine and in-vehicle motor system

A cogging torque in a rotary electric machine is sufficiently reduced. The rotor core includes a magnetic pole having the base formed on the outer peripheral side of the storage space. A plurality of magnetic poles are provided in the circumferential direction, and include the first protrusion protruding from the base in one circumferential direction along the outer periphery of the rotor core, and the second protrusion which is provided on the opposite side to with the base interposed and protrudes from the base along the outer periphery of the rotor core in the other circumferential direction. At least one of the first protrusion and the second protrusion is located on the outer peripheral side from the first line segment which is a virtual line connecting the end of the first protrusion and the end of the second protrusion, and is provided such that the space is provided with respect to the first line segment.

Rotor core, rotor of rotary electrical machine, rotary electrical machine, and automotive auxiliary electrical system

A torque ripple in a rotary electric machine is sufficiently reduced. At least two of the plurality of laminated plates in the rotor core include a magnetic pole having the base formed on the outer peripheral side of the storage space, and a bridge part connected to the magnetic pole. A plurality of magnetic poles are provided in the circumferential direction, and the first space is formed between the bases of a pair of magnetic poles adjacent in the circumferential direction. The q-axis outer peripheral portion, which is located between the pair of circumferentially adjacent magnetic poles and is in contact with the first space, is provided on the inner peripheral side of the base. The base includes the side surface portion which is in contact with the first space, and the protrusion which is provided on the outer peripheral side of the side surface portion and protrudes in the circumferential direction with respect to the side surface portion. The bridge are arranged on the inner peripheral side of the side surface portion.

In a calculation method of calculating a switching wave form of an inverter by expressing a wave form obtained by measurement or simulation using a function formula, an intermediate terminal is provided between an upper terminal and a lower terminal of an inverter arm and a power supply of a voltage function formula is provided between the upper terminal and the intermediate terminal or the intermediate terminal and the lower terminal. Further, it may be configured such that a variation impact from peripheral circuits at time of switching is calculated and voltage correction calculation is performed to prevent the calculated switching wave form from changing due to the calculation of the variation impact.

Calculation method of switching waveform of the inverter and circuit simulation model

The present invention has for its object to provide a charged particle beam irradiation method and a charged particle beam apparatus which can suppress unevenness of electrification even when a plurality of different kinds of materials are contained in a pre-dosing area or degrees of density of patterns inside the pre-dosing area differs with positions. To accomplish the above object, a charged particle beam irradiation method and a charged particle beam apparatus are provided according to which the pre-dosing area is divided into a plurality of divisional areas and electrifications are deposited to the plural divisional areas by using a beam under different beam irradiation conditions. With the above construction, the electrifications can be deposited to the pre-dosing area on the basis of such an irradiation condition that the differences in electrification at individual positions inside the pre-dosing area can be suppressed and consequently, an influence an electric field has upon the charged particle beam and electrons given off from the sample can be suppressed.

Electron beam irradiation method and scanning electron microscope

In a process for the manufacture of a semiconductor integrated circuit device having an inlaid interconnect structure by embedding a conductor film in a recess, such as a trench or hole, formed in an organic insulating film which constitutes an interlevel dielectric film and includes an organosiloxane as a main component, the recess, such as a trench or hole, is formed by subjecting the organic insulating film to plasma dry etching in a CF-based gas/N/Ar gas in order to suppress the formation of an abnormal shape on the bottom of the recess, upon formation of a photoresist film over the organic insulating film, followed by formation of the recess therein with the photoresist film as an etching mask.

Method of manufacture of semiconductor integrated circuit device and semiconductor integrated circuit device

An etching technique capable of applying etching at high selectivity to a transition metal element-containing electrode material layer which is formed on or above a dielectric material layer made of a high-dielectric-constant or 'high-k' insulator is provided. To this end, place a workpiece on a lower electrode located within a vacuum processing vessel. The workpiece has a multilayer structure of an electrode material layer which contains therein a transition metal element and a dielectric material layer made of high-k insulator. Then, while introducing a processing gas into the vacuum processing vessel, high-frequency power is applied to inside of the vacuum processing vessel, thereby performing plasma conversion of the introduced processing gas so that the workpiece is etched at its surface. When etching the electrode material layer, an HCl gas is supplied as the processing gas.

Plasma etching method

Method of manufacture of semiconductor integrated circuit

To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other and selectively obtaining desired dissociated species.

Semiconductor integrated circuit arrangement fabrication method

The following defects are suppressed: when an interlayer insulating film including a silicon carbide film and an organic insulating film is dry-etched to form interconnection grooves over underlying Cu interconnections, an insulating reactant adheres to the surface of the underlying Cu interconnections exposed to the bottom of the interconnection grooves, or the silicon carbide film or the organic insulating film exposed to the side walls of the interconnection grooves are side-etched. When a lamination film made of a silicon oxide film, an organic insulating film, a silicon oxide film, an organic insulating film and a silicon carbide film is dry-etched to form interconnection grooves over Cu interconnections, a mixed gas of SF and NH is used as an etching gas for the silicon carbide film to work side walls of the interconnection grooves perpendicularly and further suppress defects that a deposit or a reactant adheres to the surface of the Cu interconnections exposed to the bottom of the interconnection grooves.

Fabrication method of semiconductor integrated circuit device

Plasma processing apparatus and plasma processing method in which a part

To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other, and selectively obtaining desired dissociated species.

Growing community of inventors

Tokyo, Japan

Kazutami Tago