Nichia Corporation

Osaka University

Tokai National Higher Education and Research System

Nagoya University

Kazutaka Wajima

Tsukasa Torimoto

Susumu Kuwabata

Tatsuya Kameyama

Daisuke Oyamatsu

Taro Uematsu

Kenta Niki

A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M, M, and Z. Mis at least one element selected from the group consisting of Ag, Cu, and Au. Mis at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.

Semiconductor nanoparticles and method of producing semiconductor nanoparticles

Provided are core-shell semiconductor nanoparticles, each including a core and a shell disposed on a surface of the core, and emitting light when irradiated with light. The core contains a semiconductor containing M, M, and Z, Mcontaining at least one selected from the group consisting of Ag, Cu, and Au, Mcontaining at least one selected from the group consisting of Al, Ga, In, and Tl, and Z containing at least one selected from the group consisting of S, Se, and Te. The shell contains a semiconductor containing a Group 13 element and a Group 16 element, and having a greater band-gap energy than the core. The shell has a compound containing a Group 15 element disposed on a surface of the shell, and the Group 15 element containing at least P with a negative oxidation number.

Core-shell semiconductor nanoparticles, production method thereof, and light-emitting device

Provided is a method of producing semiconductor nanoparticles that exhibit a band-edge emission, and are superior in quantum yield. The method includes raising the temperature of a first mixture containing a silver (Ag) salt, a salt containing at least one of indium (In) and gallium (Ga), a solid compound that serves as a supply source of sulfur (S), and an organic solvent to a temperature in a range of from 125 □C to 175 □C, and heat-treating, subsequent to the raising of the temperature, the first mixture at a temperature in a range of from 125 □C to 175 □C for three seconds or more to obtain a solution containing semiconductor nanoparticles, and decreasing the temperature of the solution containing semiconductor nanoparticles. The solid compound that serves as a supply source of S contains thiourea.

Semiconductor nanoparticles, production method thereof, and light-emitting device

Provided is a method of producing semiconductor nanoparticles that exhibit a band-edge emission, and are superior in quantum yield. The method includes raising the temperature of a first mixture containing a silver (Ag) salt, a salt containing at least one of indium (In) and gallium (Ga), a solid compound that serves as a supply source of sulfur (S), and an organic solvent to a temperature in a range of from 125&#xb0; C. to 175&#xb0; C., and heat-treating, subsequent to the raising of the temperature, the first mixture at a temperature in a range of from 125&#xb0; C. to 175&#xb0; C. for three seconds or more to obtain a solution containing semiconductor nanoparticles, and decreasing the temperature of the solution containing semiconductor nanoparticles. The solid compound that serves as a supply source of S contains thiourea.

Growing community of inventors

Toyonaka, Japan

Kazutaka Wajima