Nichia Corporation

Kazutaka Tsukayama

Shingo Masui

A nitride semiconductor laser element, comprises a substrate and a nitride semiconductor layer in which a first semiconductor layer, an active layer, and a second semiconductor layer are laminated in this order on the substrate, wherein recessed and raised portions are formed in the first semiconductor layer and/or the second semiconductor layer, a semiconductor layer that embeds the recessed and raised portions are formed on the semiconductor layer in which said recessed and raised portions are formed, the semiconductor layer in which the recessed and raised portions are formed is equipped with a side face having a first region extending downward and a second region extending farther downward continuously from the first region, and the second region has a greater slope with respect to the normal direction of the substrate than the first region.

Nitride semiconductor laser element

A nitride semiconductor laser element includes a substrate and a nitride semiconductor layer in which a first semiconductor layer, an active layer, and a second semiconductor layer are laminated in this order on the substrate. At least one of the first semiconductor layer and the second semiconductor layer includes a first section forming recessed and raised portions and a second section embedding the recessed and raised portions of the first section. A region with a higher aluminum mixed crystal ratio than the second section that embeds the recessed and raised portions is disposed on top faces of the raised portions. The nitride semiconductor layer defines resonant planes, and the recessed and raised portions are formed in a shape of stripes that extend substantially parallel to the resonant planes.

Growing community of inventors

Tokushima, Japan

Kazutaka Tsukayama