Kabushiki Kaisha Toshiba

Research Development Corporation of Japan

Other

Agency of Industrial Science and Technology

Toshiba Ceramics Co., Ltd.

Ministry of International Trade & Industry

Komatsu Electronic Metals Co., Ltd.

Mitsubishi Materials Silicon Corporation

Solartes Lab, Ltd.

Kagaku Gijutsu Sinkou Jigyo Dan

Canon Kabushiki Kaisha

Showa Denko K.k.

Japan Science and Technology Agency

Showa Denko Kabushiki Kaisha

Japan Science and Technology Corporation

Kazutaka Terashima

Suzuka Nishimura

Hideo Nakanishi

Tsuguo Fukuda

Shigeyuki Kimura

Keisei Abe

Hitoshi Sasaki

Susumu Maeda

Takashi Udagawa

Genichi Hatakoshi

Masayuki Watanabe

Yutaka Uematsu

Masaru Kawachi

Takuji Tsuzaki

Eiji Tokizaki

Muneyuki Hirai

Yutaka Shiraishi

Akira Nagashima

Johji Nishio

Hiroaki Yoshida

Shunichi Suzuki

Masaki Okajima

Yoshihisa Abe

Jun Komiyama

Katsuyoshi Fukuda

Akinobu Kasami

Syoichi Washizuka

Koji Izunome

Yasunao Oyama

Hiroaki Nakajima

Tooru Katsumata

Xin Ming Huang

Kouji Izunome

Xingming Huang

A structure of a high luminance LED and a high luminance LD is provided. The present invention provides a light emitting device containing, on a zinc blend-type BP layer formed on an Si substrate, an AlInGaN (y&#x2267;0, x&#x3e;0) crystal as a mother crystal maintaining the zinc blend-type crystal structure and In dots having an In concentration higher than that of the AlInGaN (y&#x2267;0, x&#x3e;0) crystal as the mother crystal.

Active region containing nanodots (also referred to as 'quantum dots') in mother crystal formed of zinc blende-type (also referred to as 'cubic crystal-type') AlyInxGal-y-xN Crystal (y[[&#x25a1;]][&#x2267;] 0, x &#x3e; 0) grown on Si substrate, and light emitting device using the same (LED and LD)

A method for producing a GaN-based crystal includes forming a Zinc-blend type BP crystal layer on a Si substrate; forming an In-containing layer, on the BP crystal layer, with such a thickness as to keep the Zinc-blend type structure; and forming a Zinc-blend type GaN-based crystal layer on the In-containing layer. The In-containing layer is a metallic In layer having a thickness of 4 atom layers or less, an InGaN layer having a thickness of 2 nm or less, an InAl mixture layer having a thickness of 4 atom layers or less and containing Al at 10% or less, or an AlInGaN layer having a thickness of 2 nm or less and containing Al at 10% or less.

Method for producing GaN-based crystal and semiconductor device

A crystallization method includes the steps of melting a crystallized material in a crucible by heating, and growing a crystal by cooling and coagulating the melted material, wherein said melting step includes introducing a predetermined gas into the melted material.

Crystallization method and crystallization apparatus

A short-wavelength light-emitting element such as an ultraviolet light-emitting element or blue light-emitting element is arranged in a container which has a window with a window board formed of calcium fluoride crystals. Fluoride crystals are ones which contain either metal or metal halide, or both of them. In a production method of fluoride crystals in which the cavity of a crucible is filled with raw material powder and this crucible is heated in a vertical Bridgman furnace, a production method of fluoride crystals of the present invention is the one in which the shortest diameter of a cross section of the cavity of the crucible is small. In a crucible, whose cavity is filled with raw material powder, heated in a vertical Bridgman furnace to produce fluoride crystals, a crucible is the one in which the shortest diameter of a section of the cavity is small.

Short-wavelength light-emitting element arranged in a container with a window having a window board formed of a calcium fluoride crystals

A method of epitaxially growing a SiC film on a Si substrate, including: (a) supplying a raw material gas containing a gas having P (phosphorus) element and a gas having B (boron) element on a Si substrate, and thereby synthesizing an amorphous BP thin film having a thickness of 5 nm or more and 100 nm or less on the Si substrate; (b) further supplying a raw material gas containing a gas having P element and a gas having B element on the Si substrate, and thereby synthesizing a cubic boron phosphide single crystal film having a thickness of 5 nm or more and 1000 nm or less on the Si substrate; and (c) supplying a gas having carbon element and a gas having silicon element on the Si substrate thereon the BP single crystal film is formed, and thereby synthesizing a beta-SiC single crystal film or an amorphous SiC film having a thickness of 1 nm or more and several hundreds nanometers or less on the cubic boron phosphide single crystal film on the Si substrate.

Semiconductor wafer and its manufacturing method

A method of growing a group III nitride semiconductor crystal layer includes a step of growing a first buffer layer composed of boron phosphide on a silicon single crystal substrate by a vapor phase growth method at a temperature of not lower than 200&deg; C. and not higher than 700&deg; C., a step of growing a second buffer layer composed of boron phosphide on the first buffer layer by a vapor phase growth method at a temperature of not lower than 750&deg; C. and not higher than 1200&deg; C., and a step of growing a crystal layer composed of group III nitride semiconductor crystal represented by general formula Al,Ga,In,N (where 0&lE;p&lE;1, 0&lE;q&lE;1, 0&lE;r&lE;1, p&plus;q&plus;r&equals;1) on the second buffer layer by a vapor phase growth method. A semiconductor device incorporating the group III nitride semiconductor crystal layer is provided.

Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer

A germanium layer 19 is melted on top of a starting polycrystalline silicon ingot 18, at a temperature below the melting point of pure silicon. Silicon is dissolved at the interface and floats to the top of the germanium melt to form a silicon melt layer 11, from which a crystal 20 can be drawn. The process permits the production of large diameter crystal with low oxygen content and no more than one percent germanium.

Silicon crystal, and device and method for manufacturing same

A method of growing a group III nitride semiconductor crystal layer includes a step of growing a first buffer layer composed of boron phosphide on a silicon single crystal substrate by a vapor phase growth method at a temperature of not lower than 200.degree. C. and not higher than 700.degree. C., a step of growing a second buffer layer composed of boron phosphide on the first buffer layer by a vapor phase growth method at a temperature of not lower than 750.degree. C. and not higher than 1200.degree. C., and a step of growing a crystal layer composed of group III nitride semiconductor crystal represented by general formula Al.sub.p Ga.sub.q In.sub.r N (where 0.ltoreq.p.ltoreq.1, 0.ltoreq.q.ltoreq.1, 0.ltoreq.r.ltoreq.1, p+q+r=1) on the second buffer layer by a vapor phase growth method. A semiconductor device incorporating the group III nitride semiconductor crystal layer is provided.

Method of growing group III nitride semiconductor crystal layer and

A temperature sensor 42 is provided in a furnace 11, measuring temperature above a molten liquid 24 put in a crucible 12 to check proceedings of evaporation of oxygen vaporized from a free surface 44 of the molten liquid 24. From the data, and considering the relation with the oxygen dissolved into the crucible 12, the oxygen concentration in the molten liquid 24 can be found and the amount of oxygen taken into a single silicon crystal 40 pulled up from the molten liquid 24 can be figured out.

Detecting method of impurity concentration in crystal, method for

The amount of Group-V element included in a melt 6 has the close relationship with the oxygen concentration of the melt 6. This relationship is utilized for controlling the oxygen concentration of a single crystal 8 at a high level. The content of Group-V element is calculated from the weight of the melt 6 gauged by a gravimeter 11 and compared with a preset value in a control unit 12. When the calculated content is smaller than the preset value, the control signal to additionally supply Group-V element to the melt 6 is outputted from the control unit 12 to a feeder 14. When the calculated content is larger than the preset value, the control signal to supply a raw material to the melt 6 is outputted to another feeder 13.

Control of oxygen concentration in single crystal pulled up from melt

A Si material mixed with Group-V element is melted in a crucible, and then held in a chamber filled with a rare gas at atmospheric pressure of 100 torr. or higher. A rare gas, e.g. Ar, Kr, Xe or Rn, having a large mass or the mixture of Ar with Kr, Xe or Rn may be used as atmospheric gas. The high-pressure atmosphere suppress the evaporation of oxides of Group-V elements from the Si melt, so that the Si melt can be maintained at a high oxygen concentration under a stable condition until the start of pulling operation.

Preparation of silicon melt for use in pull method of manufacturing

The density of a melt precisely represents the stability of the melt, so that the initiation of pulling-up operation can be determined on the basis of the changing rate of the density. The pulling-up operation may be started when the density becomes constant, or when the changing rate of the density with respect to the temperature becomes smaller. Since the melt or clusters do not include different minute structures, an obtained single crystal is of high quality free from minute faults or dislocations.

Pull method for growth of single crystal using density detector and

A plurality of shield blades 31 for defining an opening 25 surrounding a single crystal 15 are provided between a melt 14 received in a crucible 10 and a screen 30. The shield blades 21 are carried by operation rods 23 so as to make the gap between the inner edges of the shield blades 23 and the surface of the single crystal 15 constant. Since crystal growth continues under the same condition from the beginning to the end, an obtained single crystal 15 is free from defects such as dislocations and excellent in homogenieity.

Single crystal pulling apparatus having slidable shield plate to control

The measuring device has bobs 10, 17 suspended from a weight 12 with wires 11, 16. The hook 13 of the weight 12 is hung from a suspensor thread 15 extending downwards from a balance 14. The weight 12 may be omitted by using the upper bob 10 for dead weight. The bobs 10, 17 and the wires 11, 16 may be coated with a coating layer unreactive to the melt 19 whose density is to be measured. The weights of the measuring device is measured by the balance 14 under the first condition that the lower bob 17 is immersed in the liquid 19 and the second condition that the bobs 10, 17 are both immersed in the liquid 19. The density of the liquid 19 is calculated from the two measured values without the influence of the surface tension of the liquid 19 applied to the wires 11, 16.

Measuring device for density of liquid or high-temperature melt without

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Ebina, Japan

Kazutaka Terashima