Fujitsu Corporation

Kazutaka Taki

Junichi Kai

Hiroshi Yasuda

Yasushi Takahashi

Atsushi Saito

Kiichi Sakamoto

Kenichi Miyazawa

Mitsuhiro Nakano

A charged particle exposure system uses a method for accurately and efficiently generating a required pattern having an optional angle .theta.. The method uses a reference isosceles right triangle. According to the reference triangle, a plurality of rectangular beams are formed. Each of the rectangular beams is multiplied by tan .theta. of the optional angle .theta., thereby preparing data of beams necessary for forming the required pattern.

Method of forming pattern having optical angle in charged particle

A charged particle beam exposure method is used to draw a pattern on a substrate which is carried on a continuously moving stage by deflecting a charged particle beam. The method includes moving the stage in a direction parallel to an axis of a coordinate system of the substrate; generating first deflection data D.sub.1 in a coordinate system of the stage by obtaining a position coordinate of an reference position of a pattern region including the pattern to be drawn relative to a target position of the stage, and for obtaining second deflection data D.sub.2 in a coordinate system of the substrate describing a position coordinate of the pattern to be drawn from the reference position of the pattern region to which the pattern belongs; carrying out with respect to first deflection data D.sub.1 a first correcting operation including correction of pattern distortion inherent to a charged particle beam exposure apparatus, and for carrying out the first correcting operation and a second correcting operation with respect to second deflection data D.sub.2 after making a coordinate conversion to the coordinate system of the stage, where second correcting operation corrects a rotation error component relative to the stage caused by movement of the substrate; obtaining third deflection data D.sub.3 ' which describes a position coordinate of the pattern to be drawn from the present position of the stage by adding corrected first deflection data D.sub.1 ' and corrected second deflection data D.sub.2 '; and controlling a deflector based on third deflection data D.sub.3 '.

Charged particle beam exposure method and apparatus

A charged particle beam exposure system emits and deflects an electron beam (11a) toward a continuously moving exposure object (18) and draws semiconductor integrated circuit patterns on the object. The system comprises a charged particle beam generating unit (11), first and second deflectors (12 and 13) for deflecting the electron beam (11a), first and second deflector drivers (14 and 15) for controlling outputs of the first and second deflectors (12 and 13), a stage driving and controlling unit (16) for controlling the movement of the object (18), and a controller (17) for controlling the inputs and outputs of the respective components. The second deflector driver (15) comprises at least a data correction unit (15A) for receiving main deflector data (MD1) and stage position data (STD) and providing corrected main deflector data (MD2), a deflection signal output unit (15B) for providing a main deflector set signal (S1) according to the main deflector data (MD2), a first wait time generator (15C) for generating a first pulse signal (PS1) according to the main deflector data (MD2), a second wait time generator (15D) for generating a second pulse signal (PS2) in synchronism with the first pulse signal (PS1), and a comparator (15E) for comparing the first and second pulse signals (PS1 and PS2) with each other and providing a drawing start signal (S3).

Charged particle beam exposure apparatus control system and a method of

A charged particle beam exposure system employs a continuously moving stage technique and a double deflection technique. The system stably deflects charged particle beams and reliably exposes a sample to the beams with no overflow. The system positively moves a major deflector from one subfield to a particular position of another subfield on the sample for period corresponding to a settling time that is usually needed for a subfield-to-subfield jump of the major deflector, and then exposes the sample to the beams.

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Kawasaki, Japan

Kazutaka Taki