Fuji Xerox Co., Ltd.

Tokyo Institute of Technology

Fujifilm Business Innovation Corp.

Kazutaka Takeda

Takashi Kondo

Hideo Nakayama

Taku Kinoshita

Akemi Murakami

Junichiro Hayakawa

Naoki Jogan

Hideaki Ozawa

Jun Sakurai

Kazuyuki Matsushita

Fumio Koyama

Kohei Yukawa

Sho Kimura

Hamed Dalir

Michiaki Murata

Masahiro Yoshikawa

Masaya Kumei

Saori Nishizaki

Kouhei Yukawa

An optical measurement apparatus for an eyeball includes a light emitter, a light receiver, a detector, and a controller. The light emitter emits light such that the light passes across an eyeball of a subject. The light receiver receives the light that has transmitted through the eyeball. The detector detects a direction of the eyeball. The controller performs control such that the light emitter starts emitting light having an intensity used in measurement or the light emitter increases an intensity of light emitted by the light emitter to the intensity used in measurement in a case where the direction of the eyeball detected by the detector is in a predetermined range.

Optical measurement apparatus for eyeball

An eyeball optical measuring device includes: an optical measuring unit that irradiates an eyeball of a subject with measuring light to perform an optical measurement of the eyeball; and a light irradiation unit that irradiates the eyeball with irradiation light prior to the optical measurement by the optical measuring unit, the irradiation light having a lower energy density than an energy density of the measuring light.

Eyeball optical measuring device and eyeball optical measuring method

An optical measuring instrumentis equipped with an optical systemto be used for measuring a characteristic of the aqueous humor in the anterior chamberof an eyeballof a measurement subject person and a holding unitwhich holds the optical systemetc. The optical systemis equipped with a light emitting systemA and a photodetecting systemB. An optical pathis set so that light emitted from the light emitting systemA passes through (traverses) the anterior chamberand is detected by the photodetecting systemB in a state that the eyeballis turned outward.

Eyeball optical measuring instrument, eyeball optical measuring method, and method for irradiating an eyeball and detecting light coming from eyeball

A surface-emitting semiconductor laser includes a first semiconductor multilayer film reflector, an active region, a second semiconductor multilayer film reflector, and a current confinement layer including an oxidized region formed by selective oxidation. The current confinement layer includes a first semiconductor layer having a relatively high Al content, a second semiconductor layer that is adjacent to the first semiconductor layer on an active-region side of the first semiconductor layer and has a lower Al content than the first semiconductor layer, and a composition-gradient layer adjacent to the first semiconductor layer on a side of the first semiconductor layer which is opposite to the active-region side. A portion of the composition-gradient layer which faces the first semiconductor layer has a lower Al content than the first semiconductor layer.

Surface-emitting semiconductor laser, method for producing the same, surface-emitting semiconductor laser device, optical transmission device, and information processing device

An optical measurement apparatus includes: an emission section that emits light such that the light travels across an anterior chamber of an eyeball of a measurement subject; a light reception section that receives light that is emitted from the emission section and travels across the anterior chamber; and a positioning section that performs positioning of one of the emission section and the light reception section at a position where skin on a periphery of an inner canthus of the eyeball is squeezed into an eye socket accommodating the eyeball.

Optical measurement apparatus and light irradiation/reception method

A concentration calculation system calculates a concentration of the optically active substance based on a formula. The formula includes a first function representing wavelength dependence of an optical rotation of a first optically-active substance, and a second function representing wavelength dependence of an optical rotation of a second optically-active substance. In the first function, concentration of the first optically-active substance has an unknown value, and an inherent value for defining a characteristic of optical rotatory dispersion of the first optically-active substance is a known value or an unknown value within a certain limited range. In the second function, an inherent value for defining a characteristic of optical rotatory dispersion of the second optically-active substance is an unknown value. The concentration of the first optically-active substance is calculated based on the formula and optical rotations of measurement target respectively corresponding to a plurality of wavelengths, by using a least-squares method.

Concentration calculation system of optically active substance, manufacturing method of concentration calculation system of optically active substance, and computer readable medium

A vertical-cavity surface-emitting laser diode includes: a first resonator that has a plurality of semiconductor layers comprising a first current narrowing structure having a first conductive region and a first non-conductor region; a first electrode that supplies electric power to drive the first resonator; a second resonator that has a plurality of semiconductor layers comprising a second current narrowing structure having a second conductive region and a second non-conductive region and that is formed side by side with the first resonator, the second current narrowing structure being formed in same current narrowing layer as the layer where the first current narrowing structure is formed; and a coupling portion as defined herein; and an equivalent refractive index of the coupling portion is smaller than an equivalent refractive index of each of the first resonator and the second resonator.

Vertical-cavity surface-emitting laser diode and optical transmission apparatus

There is provided a surface emitting semiconductor laser including: a substrate; and a semiconductor layer including: a first semiconductor multilayer film having plural sets of specific layers, a second semiconductor multilayer film having plural sets of specific layers, and an active layer provided between them, so as to constitute a resonator.

Surface emitting semiconductor laser device

A method of manufacturing an optical semiconductor element includes: a first step in which a columnar structure of a semiconductor layer formed on a semi-insulating substrate is formed; a second step in which the substrate is exposed in a periphery of the columnar structure; a third step in which a region including exposed surfaces of the first contact layer and the substrate is pretreated; a fourth step in which a first electrode is formed on the exposed surface of the first contact layer; a fifth step in which an interlayer insulating film is formed in a region including a side surface of the columnar structure and the exposed surfaces; a sixth step in which a first electrode wiring is formed on the interlayer insulating film; and a seventh step in which a second electrode wiring is formed on the interlayer insulating film.

Method of manufacturing optical semiconductor element

Provided is a surface-emitting semiconductor laser including a substrate; a first semiconductor multilayer reflector of a first conductivity type formed on the substrate, the first semiconductor multilayer reflector including plural pairs of a low-refractive-index layer and a high-refractive-index layer; a cavity region formed on the first semiconductor multilayer reflector; a second semiconductor multilayer reflector of a second conductivity type formed on the cavity region, the second semiconductor multilayer reflector including plural pairs of a low-refractive-index layer and a high-refractive-index layer; a columnar structure extending from the second semiconductor multilayer reflector to the cavity region; and a current confinement layer formed inside the columnar structure by selective oxidation of a semiconductor layer containing Al. The cavity region includes an active region; and a cavity extension region interposed between the active region and the first semiconductor multilayer reflector.

Surface-emitting semiconductor laser, surface-emitting semiconductor laser device, optical transmission device, and information processing device

A surface-emitting semiconductor laser device includes a substrate and a semiconductor layer disposed on the substrate. The semiconductor layer includes a first semiconductor multilayer film of a first conductivity type, a first spacer layer, an active layer, a second spacer layer, and a second semiconductor multilayer film of a second conductivity type. The first semiconductor multilayer film and the second semiconductor multilayer film form a cavity. A peak of a pattern of a standing wave formed by the cavity and the center of the active layer are located at different positions.

Surface-emitting semiconductor laser device and method for producing the same

Provided is a surface-emitting semiconductor laser device including a substrate; a semiconductor layer formed on the substrate, the semiconductor layer including a first semiconductor multilayer film of a first conductivity type, an active region, and a second semiconductor multilayer film of a second conductivity type, the first semiconductor multilayer film and the second semiconductor multilayer film forming a cavity; and an oxidation-resistant structure including a groove formed along at least a portion of an outer periphery of the semiconductor layer and an oxidation-resistant portion formed on a surface of the groove.

A surface emitting semiconductor laser includes a substrate, a first conductivity-type first semiconductor multilayer reflector, an active layer, a semiconductor layer, a second conductivity-type second semiconductor multilayer reflector that includes a current confinement layer, and a heat dissipating metal member. At least the first semiconductor multilayer reflector, the active layer, the semiconductor layer, and the second semiconductor multilayer reflector are stacked in this order on the substrate. A columnar structure having a top portion, a side surface, and a bottom portion is formed from the second semiconductor multilayer reflector to the semiconductor layer. The heat dissipating metal member is connected to the semiconductor layer exposed at the bottom portion of the columnar structure.

Surface emitting semiconductor laser, surface emitting semiconductor laser array, surface emitting semiconductor laser device, optical transmission device, information processing apparatus, and method of producing surface emitting semiconductor laser

A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflector on the substrate including laminated pairs of a high refractive index layer relatively high in refractive index and a low refractive index layer relatively low in refractive index; an active region on or above the first reflector; a second semiconductor multilayer reflector on or above the active region including laminated pairs of a high refractive index layer relatively high in refractive index and a low refractive index layer relatively low in refractive index; and a cavity extending region formed between the first reflector and the active region or between the second reflector and the active region, having an optical film thickness greater than an oscillation wavelength, extending a cavity length, including a conductive semiconductor material, and including an optical loss causing layer at at least one node of a standing wave of a selected longitudinal mode.

Growing community of inventors

Kanagawa, Japan

Kazutaka Takeda