Agc Inc.

Asahi Glass Company, Limited

Kazutaka Ono

Shuhei Nomura

Hirofumi Tokunaga

Shigeki Sawamura

Shusaku Akiba

Yu Hanawa

Nobuhiko Takeshita

Tetsuya Nakashima

Yusuke Kobayashi

Hiroyuki Ohkawa

Keisuke Hanashima

Seiki Ohara

Jun Akiyama

Yasumasa Kato

Suguru Murayama

Seiji Inaba

Takahiro Sakagami

Nobutaka Kidera

Motoyuki Hirose

Yusaku Matsuo

Hiroyuki Hijiya

Jun Endo

Masaya Kunigita

Yuichi Kuroki

Junko Miyasaka

Kiyoshi Tamai

Daisuke Kobayashi

Yusuke Arai

Akio Koike

Yoshiharu Ooi

Hiroki Hotaka

Hirofumi Yamamoto

Izuru Kashima

Qing Li

Atsuyoshi Takenaka

Kenichi Ebata

Reo Usui

Kosho Akatsuka

Yuha Kobayashi

Shunji Inoue

Takatoshi Yaoita

Hitomi Furuta

Manuel Reyes Diaz

Yoshitaka Maeyanagi

Yasunari Saito

Tetsushi Takiguchi

Taketoshi Taniguchi

An alkali-free glass includes, as represented by mole percentage based on oxides, SiO: 57 to 70%, AlO: 5 to 15%, BO: 15 to 24%, MgO: 0.2 to 10%, CaO: 0.1 to 7%, SrO: 0.1 to 2.5%, BaO: 0 to 10%, and ZnO: 0 to 0.1%, or includes, as represented by mole percentage based on oxides, SiO: 57 to 70%, AlO: 5 to 15%, BO: 15 to 24%, MgO: 0.1 to 10%, CaO: 0.1 to 10%, SrO: 0.1 to 10%, BaO: 0.1 to 10%, and ZnO: 0 to 0.1%. Formula (A) is [AlO]/[BO], and a value of the formula (A) is larger than 0.35 and 1.4 or smaller.

Alkali-free glass and glass plate

An alkali-free glass includes, in mol % in terms of oxides: SiO: 63-69%; AlO: 8-13%; BO: 0.5-4%; MgO: 8-15%; CaO: 4-12%; SrO: 0-4.5%; and BaO: 0-1%. [MgO]/[CaO] is 0.67 to 3.75. A value of Formula (A) is 84 or larger. A value of Formula (B) is 715 or smaller. A value of Formula (C) is 200 or smaller. A value of Formula (D) is 15 or smaller.

Alkali-free glass

An alkali-free glass includes, in mol % in terms of oxides: SiO: 63-75%; AlO:10-16%; BO: larger than 0.5% and 5% or smaller; MgO: 0.1-15%; CaO: 0.1-12%; SrO: 0-8%; and BaO: 0-6%. [MgO]/[CaO] is larger than 1.5. A value of Formula (A) is 82.5 or larger. A value of Formula (B) is 690 or larger and 800 or smaller. A value of Formula (C) is 100 or smaller. A value of Formula (D) is 20 or smaller. The alkali-free glass has a Young's modulus of 83 GPa or larger and a surface devitrification viscosity ηof 10dPa·s or higher.

A glass sheet, containing, in mass % on an oxide basis: 45-70% of SiO, 1-15% of AlO, 10-25% of LiO, 0-10% of NaO, 0-5% of KO, and 0-15% of ZrO. KO/RO is 0.10 or less and ZrO/RO is 0.30 or more, where RO is a total content of LiO, NaO, and KO. The glass sheet has an average thermal expansion coefficient at 50° C.-350° C. of 90×10/° C.-140×10/° C. and a Young's modulus of 85 GPa or more.

Glass ceramics, chemically strengthened glass, and semiconductor substrate

A glass substrate for high-frequency devices includes, in terms of molar percentage based on oxides: one or more alkaline-earth metal oxides in a total amount of 0.1 to 13%; AlOand BOin a total amount of 1 to 40%, in which a molar ratio of the contents represented by AlO/(AlO+BO) is 0 to 0.45; at least one oxide selected from the group consisting of ScO, TiO, ZnO, GaO, GeO, YO, ZrO, NbO, InO, TeO, HfO, TaO, WO, BiO, LaO, GdO, YbO, and LuO, in a total amount of 0.1 to 1.0%; and SiOas a main component. The glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

Glass substrate for high frequency device, liquid crystal antenna and high frequency device

A glass substrate has a compaction of 0.1 to 100 ppm. An absolute value |Δα| of a difference between an average coefficient of thermal expansion αof the glass substrate and an average coefficient of thermal expansion of single-crystal silicon at 50° C. to 100° C., an absolute value |Δα| of a difference between an average coefficient of thermal expansion αof the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 100° C. to 200° C., and an absolute value |Δα| of a difference between an average coefficient of thermal expansion αof the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 200° C. to 300° C. are 0.16 ppm/° C. or less.

Glass substrate, semiconductor device, and display device

A supporting glass substrate includes a compression stress layer on a surface thereof, and has an average thermal expansion coefficient at 50° C. to 200° C. that is 7 ppm/° C. to 15 ppm/° C., an internal tensile stress that is 5 MPa to 55 MPa, and a depth of the compression stress layer that is 10 μm to 60 μm.

Supporting glass substrate and laminated body

Provided is a glass substrate with which it is possible to reduce dielectric loss in high-frequency signals, and which also has excellent thermal shock resistance. This invention satisfies the relation {Young's modulus (GPa)×average thermal expansion coefficient (ppm/° C.) at 50-350° C.}≤300 (GPa·ppm/° C.), wherein the relative dielectric constant at 20° C. and 35 GHz does not exceed 10, and the dielectric dissipation factor at 20° C. and 35 GHz does not exceed 0.006.

Glass substrate, liquid crystal antenna and high-frequency device

A glass has a density of 2.60 g/cmor lower, a Young's modulus of 88 GPa or more, a strain point of 650 to 720° C., a temperature Tat which a glass viscosity reaches 10dPa·s of 1,320° C. or lower, a glass surface devitrification temperature (T) of T+20° C. or lower, and an average coefficient of thermal expansion of 30×10to 43×10/° C. at 50 to 350° C. The glass contains, as represented by mol % based on oxides, 50 to 80% of SiO, 8 to 20% of AlO, 0 to 0.5% in total of at least one kind of alkali metal oxide selected from the group consisting of LiO, NaO and KO, and 0 to 1% of PO.

Glass

The present invention relates to a glass substrate including a pair of main surfaces and an end surface, and having a surface layer diffusion Sn atom concentration of 2.0×10atomic/cmor more and 1.4×10atomic/cmor less in at least one of the main surfaces, the surface layer diffusion Sn atom concentration being obtained by subtracting an Sn atom concentration of an inside of the glass substrate from an Sn atom concentration of a surface layer of the glass substrate, in which the Sn atom concentration of a surface layer of the glass substrate is defined as an Sn atom concentration at a depth of 0.1 to 0.3 μm from the main surface and the Sn atom concentration of an inside of the glass substrate is defined as an Sn atom concentration at a depth of 9.0 to 9.2 μm from the main surface.

Glass substrate, black matrix substrate, and display panel

The present invention relates to a substrate having a dielectric loss tangent (A) as measured at 20° C. and 10 GHz of 0.1 or less, a dielectric loss tangent (B) as measured at 20° C. and 35 GHz of 0.1 or less, and a ratio [a dielectric loss tangent (C) as measured at an arbitrary temperature in a range of −40 to 150° C. and at 10 GHz]/[the dielectric loss tangent (A)] of 0.90-1.10, or a substrate having a relative permittivity (a) as measured at 20° C. and 10 GHz of 4 or more and 10 or less, a relative permittivity (b) as measured at 20° C. and 35 GHz of 4 or more and 10 or less, and a ratio [a relative permittivity (c) as measured at an arbitrary temperature in a range of −40 to 150° C. and at 10 GHz]/[the relative permittivity (a)] of 0.993-1.007.

Substrate, liquid crystal antenna and high-frequency device

A glass substrate for a high-frequency device, which contains, in terms of mole percent on the basis of oxides: 40 to 75% of SiO; 0 to 15% of AlO; 13 to 23% of BO; 2.5 to 11% of MgO; and 0 to 13% of CaO, and having a total content of alkali metal oxides in the range of 0.001-5%, where at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

Glass substrate for high-frequency device and circuit board for high-frequency device

An alkali-free glass has a strain point of 650° C. or more, an average coefficient of thermal expansion at 50 to 350° C. of from 30×10to 45×10/° C., and a temperature Tat which a glass viscosity reaches 10dPa·s of from 1,500 to 1,800° C. The alkali-free glass contains, as represented by mol % based on oxides, SiO: from 62 to 70%, AlO: from 9 to 16% BO: from 0 to 12%, MgO: from 3 to 10%, CaO: from 4 to 12%, SrO: from 0 to 6%, and FeO: from 0.001 to 0.04%, provided that MgO+CaO+SrO+BaO is from 12 to 25%. The alkali-free glass has a β-OH value of from 0.35 to 0.85/mm.

An alkali free glass has an average coefficient of thermal expansion at 50 to 350° C. of 30×10to 43×10/° C., a Young's modulus of 88 GPa or more, a strain point of 650 to 725° C., a temperature Tat which a viscosity reaches 10dPa·s of 1,290° C. or lower, a glass surface devitrification temperature (T) of T+20° C. or lower, and a temperature Tat which the viscosity reaches 10dPa·s of 1,680° C. or lower. The alkali free glass contains, as represented by mol % based on oxides, 62 to 67% of SiO, 12.5 to 16.5% of AlO, 0 to 3% of BO, 8 to 13% of MgO, 6 to 12% of CaO, 0.5 to 4% of SrO, and 0 to 0.5% of BaO. MgO+CaO+SrO+BaO is 18 to 22%, and MgO/CaO is 0.8 to 1.33.

A glass substrate contains, as a glass matrix composition as represented by mole percentage based on oxides, SiO: 58-75%, AlO: 4.5-16%, BO: 0-6%, MgO: 0-6%, CaO: 0-6%, SrO: 5-20%, BaO: 5-20%, and MgO+CaO+SrO+BaO:15-40%. The glass substrate has an alkali metal oxide content of 0-0.1% as represented by mole percentage based on oxides. The glass substrate has an average coefficient of thermal expansion &#x3b1; of 56-90 (&#xd7;10/&#xb0; C.) at 50&#xb0; C.-350&#xb0; C.

Glass substrate, laminated substrate, and laminate

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Tokyo, Japan

Kazutaka Ono