Hitachi, Ltd.

Mitsubishi Heavy Industries Limited

Renesas Technology Corp.

Tsinghua University

Mitsubishi Hitachi Power Systems, Ltd.

Kazutaka Mori

Toshihiko Tanaka

Norio Hasegawa

Ko Miyazaki

Ikuo Okada

Taiji Torigoe

Masahiro Iwamura

Joji Okada

Tatsumi Yamauchi

Masato Hamamoto

Tsuneo Terasawa

Satoru Isomura

Mitsugu Kusunoki

Ichiro Nagano

Michiaki Nakayama

Shigeya Tanaka

Sunao Aoki

Yoshitaka Uemura

Hidetaka Oguma

Kouji Takahashi

Hiroshige Kogayu

Katsumi Namba

Takashi Hotta

Takahide Ikeda

Masatoshi Hasegawa

Hisayuki Higuchi

Shinichiro Mitani

Koji Takahashi

Minoru Ohara

Yasuhiko Tsuru

Ryusuke Sahara

Kosuke Fujiwara

Atsushi Wakahara

Katsunori Akiyama

Masato Shida

Sachio Shimohata

Hideo Maejima

Satoshi Sakai

Yoshiaki Inoue

Atsuo Watanabe

Eisaku Ito

Keiichi Higeta

Hitoshi Morimoto

Masahiko Mega

Keizo Tsukagoshi

Hideaki Kaneko

Yoshifumi Okajima

Yutaka Kawata

Qiang Xu

Hideyuki Takahashi

Wei Pan

Daichi Matsumoto

Ryota Okimoto

Takehiko Hirata

Masaki Kouno

Hidenobu Tamai

Yuya Fujii

Katsuyuki Asaka

Tomofami Hokari

Koji Ishikawa

Tamotsu Miyake

A slurry for forming a mold includes a silica sol as a dispersion medium and niobia-stabilized zirconia dispersed in the silica sol.

Slurry for forming mold, mold and method for producing mold

A method for manufacturing a core (S) includes: a coating step (S) of adding an organic binder to a large particle group composed of silica-containing large particles, and coating surfaces of the large particles with the organic binder; a mixing step (S) of mixing, after the coating step (S), the large particle group and a small particle group composed of silica-containing small particles having a smaller particle size than the large particles; a laminate shaping step (S) of forming, after the mixing step (S), a molding in which a mixture of the large and small particle groups is used; and a sintering step (S) of sintering the molding after the laminate shaping step (S).

Method for manufacturing core, and method for manufacturing turbine member in which core is acquired by said core manufacturing method

A coating layer including solely silicon alkoxide or mixed alkoxide of silicon alkoxide and aluminum alkoxide is formed on a surface of a sintered precision-casting core body mainly including silica particles so as to seal holes formed in the surface. As a result, it is possible to prevent the breakage of the core during casting.

Precision-casting core, precision-casting core manufacturing method, and precision-casting mold

A process for producing a thermal barrier coating having an excellent thermal barrier effect and superior durability to thermal cycling. Also, a turbine member having a thermal barrier coating that has been formed using the production process, and a gas turbine. The process for producing a thermal barrier coating includes: forming a metal bonding layer () on a heat-resistant alloy substrate (), and forming a ceramic layer () on the metal bonding layer () by thermal spraying of thermal spray particles having a particle size distribution in which the 10% cumulative particle size is not less than 30 &#x3bc;m and not more than 100 &#x3bc;m.

Process for producing thermal barrier coating

There are provided a thermal barrier coating material and a thermal barrier coating member that can suppress spalling when used at a high temperature and have a high thermal barrier effect, a method for producing the same, a turbine member coated with a thermal barrier coating, and a gas turbine. The thermal barrier coating member comprises a heat resistant substrate, a bond coat layer formed thereon, and a ceramic layer formed further thereon, wherein the ceramic layer comprises an oxide which consists of an oxide represented by the general formula AZrOdoped with a predetermined amount of CaO or MgO and has 10 volume % or more of a pyrochlore type crystal structure, where A represents any of La, Nd, Sm, Gd, and Dy.

Thermal barrier coating member, method for producing the same, thermal barrier coating material, gas turbine, and sintered body

A method by which physical properties, including the Young's modulus and thermal conductivity of a ceramic layer of a thermal barrier coating formed on a high-temperature member, are quickly and accurately estimated. A method for estimating a physical property of a ceramic includes a step of calculating the Larson-Miller parameter from the time for which and the temperature at which the ceramic is heated; a step of acquiring the porosity of the ceramic corresponding to the calculated Larson-Miller parameter, based on the calculated Larson-Miller parameter and a diagram correlating the Larson-Miller parameter and the porosity obtained from samples having the same composition as the ceramic; and a step of acquiring the physical property of the ceramic corresponding to the acquired porosity, based on the acquired porosity and a diagram correlating the porosity and the physical property obtained from samples having the same composition as the ceramic.

Method for estimating physical property of ceramic, method for estimating physical property of thermal barrier coating, method for estimating remaining lifetime of thermal barrier coating, method for estimating remaining lifetime of high-temperature member, and physical property acquiring apparatus

A silicon resin is applied to the outer wall of the transition piece of a gas turbine subjected to the thermal barrier coating by caulking the cooling holes provided in the inner wall by a resin. Then, the transition piece is heated in an atmosphere furnace in order to burn or decompose the resin. A part of the silicon resin applied to the outer wall of the transition piece is decomposed or evaporated by the heating to be discharged to the atmosphere in the furnace, but a part of the silicon resin remains and protects the outer wall.

Heat treatment method

Provided are a thermal barrier coating material and a member coated with thermal barrier that can suppress the separation when used at a high temperature, and have a high thermal barrier effect; a method for manufacturing the member coated with thermal barrier; a turbine member coated with the thermal barrier coating material; and a gas turbine. More specifically provided are a shield coating member comprising a heat-resistant substrate, a bond coat layer formed on the heat-resistant substrate, and a ceramic layer formed on the bond coat layer, wherein the ceramic layer comprises a ceramic represented by a general formula AZrO, wherein A denotes a rare earth element, and the ceramic layer has (a) a porosity of 1 to 30%, (b) cracks in a thickness direction in pitches of 5 to 100% the total thickness of layers other than the bond coat layer on the heat-resistant substrate, or (c) columnar crystals.

Thermal barrier coating material, thermal barrier member, and member coated with thermal barrier and method for manufacturing the same

A thermal barrier coating material, containing a metal binding layer laminated on a base material and a ceramic layer laminated on the metal binding layer, the ceramic layer comprising partially stabilized ZrOwhich is partially stabilized by additives of DyOand YbO.

Thermal barrier coating material and method for production thereof, gas turbine member using the thermal barrier coating material, and gas turbine

A semiconductor apparatus includes a first transistor having a first emitter electrode, a first base electrode, and a first collector electrode in a region over a first region. Base lead-out polysilicon connecting the first base electrode and a first base region passes over a second region provided out of the first region and a resistor element is added. A writing voltage is reduced in an antifuse using two bipolar transistors.

Semiconductor apparatus

A DAC having a memory mat including a plurality of first memory cells, and a plurality of output lines connected to the plurality of first memory cells. Each of the plurality of memory cells has a first memory portion including bipolar transistors and storing information in non-volatility based on whether a junction of the bipolar transistors is destroyed or not, and a second memory portion connected to the first memory portion and for outputting information to corresponding one of the plurality of output lines. The DAC has a first mode in which information is transferred from the first memory portions to the second memory portions when the information is written into the second memory portions, and a second mode in which the second memory portions are specified externally and information is written into the second memory portions. Thus, the performance of a D/A converter can be improved.

Semiconductor device having D/A conversion portion

Productivity of a semiconductor integrated circuit device is improved. According to how many times the photomask is used, a photomask having an opaque pattern made of metal and a photomask having an opaque pattern made of a resist film are properly used, and thereby an exposure treatment is performed.

Method of fabricating a semiconductor integrated circuit that includes patterning a semiconductor substrate with a first photomask that uses metal for blocking light and patterning the same substrate with a second photomask that uses organic resin for blocking light

A thermal barrier coating enabling to prevent peeling of layer in a high temperature use and still having a high thermal barrier effect, a turbine part coated by this thermal barrier coating and a gas turbine comprising this turbine part are provided. The thermal barrier coating comprises a base materialof high temperature heat resistant alloy and a ceramics layerformed on the base material. The ceramics layercomprises ZrOadded with YbOas stabilizer and is laminated on the base material via a bond coat layerlaminated as a metallic bond layer. A plurality of cracksA are preferably introduced in the ceramics layer. The turbine part is constructed having its surface coated with the above thermal barrier coating.

Thermal barrier coating, manufacturing method thereof, turbine part and gas turbine

A DAC having a memory mat including a plurality of first memory cells, and a plurality of output lines connected to the plurality of first memory cells. Each of the plurality of memory cells has a first memory portion including bipolar transistors and storing information in non-volatility based on whether a junction of the bipolar transistors is destroyed or not, and a second memory portion connected to the first memory portion and for outputting information to corresponding one of the plurality of output lines. The DAC has a first mode in which information is transferred from the first memory portions to the second memory portions when the information is written into the second memory portions, and a second mode in which the second memory portions are specified externally and information is written into the second memory portions.

Semiconductor device having memory cells implemented with bipolar-transistor-antifuses operating in a first and second mode

Growing community of inventors

Kokubunji, Japan

Kazutaka Mori