Sony Corporation

Dexerials Corporation

Murata Manufacturing Co., Ltd.

Kazutaka Habu

Masayoshi Kanno

Makoto Watanabe

Toshiaki Yokota

Noritaka Sato

Kazushi Yamauchi

Naoko Takeda

Daisuke Ito

Koichi Tatsuki

Noboru Sato

Koichi Aso

Tsutomu Okamoto

Syuuiti Takizawa

Sanae Abe

A negative electrode active material includes a core particle comprising silicon; and at least one metal element selected from the group consisting of: Ge, Sn, Ni, Mo, W, Ag, Pd, Cu, Bi, Fe, Co, Mn, Cr, V, Ga, B, Sb, In, Te, Cd, Rh, Ru, Nb, Ta, Re, Os, Ir, Pt, Pb and P. The negative electrode active material has an elemental composition that varies continuously from a center of the core particle to a surface of the core particle. A negative electrode, a battery, an electric vehicle, an electric storage apparatus, an electronic apparatus and a power storage system each include the negative electrode active material.

Negative electrode active material comprising silicon and at least one metal element, and battery, battery pack, electronic apparatus, electric vehicle, electrical storage apparatus and electricity system using same

To suppress changes in capacitance due to displacement between electrodes opposing each other across a dielectric layer, thereby allowing stable manufacturing of a capacitance device having a desired capacitance. A capacitance device is of a configuration including a dielectric layer, a first electrode formed on a predetermined surface of the dielectric layer, and a second electrode formed on a surface on the opposite side of the dielectric layer from the predetermined surface. The forms of the first and second electrodes are set so that even in the event that the first electrode is relatively displaced regarding position in a predetermined direction as to the second electrode, the area of the opposing-electrode region between the first electrode and to the second electrode is unchanged.

Capacitance device and resonance circuit

A contactless receiver is provided with a receiving section and a rectification section. The receiving section has a resonant circuit including a resonant capacitor having a variable capacitance element formed with a ferroelectric material, a capacitance of the variable capacitance element changing according to a received voltage at a predetermined frequency, and a resonance coil connected to the resonant capacitor. The rectification section converts an alternating current voltage output from the receiving section into a direct current voltage.

Contactless receiver, resonant circuit, and variable capacitance element

To suppress changes in capacitance due to displacement between electrodes opposing each other across a dielectric layer, thereby allowing stable manufacturing of a capacitance device having a desired capacitance. The capacitance device according to the present invention is of a configuration including a dielectric layer (), a first electrode () formed on a predetermined surface () of the dielectric layer (), and a second electrode () formed on a surface () on the opposite side of the dielectric layer () from the predetermined surface (). The forms of the first and second electrodes () are set so that even in the event that the first electrode () is relatively displaced regarding position in a predetermined direction as to the second electrode (), the area of the opposing-electrode region between the first electrode () and to the second electrode () is unchanged.

A variable capacitor and a control method thereof capable of responding to applications of electronic apparatuses including various electronic devices and communication mobile devices. The variable capacitor includes a pair of electrodes formed so as to sandwich a ferroelectric material layer, in which polarization processing higher than a coercive field in hysteresis characteristics of polarization has been performed to the ferroelectric material layer, and the capacitance can be varied in accordance with a control voltage applied to the electrodes.

Variable capacitor, control method thereof, electronic device and communication mobile device

A varactor element, includes: a dielectric layer; a pair of signal electrodes, each disposed on one face of the dielectric layer and facing each other; and a pair of control electrodes, each disposed on another face of the dielectric layer and facing each other parallel to a direction intersecting a direction of the pair of signal electrodes facing each other.

Varactor element and electronic device

Disclosed is a variable capacitor that includes signal electrodes configured to sandwich a dielectric layer so as to generate a signal electric field, and control electrodes configured to sandwich the dielectric layer so as to generate a control electric field in a direction intersecting with the signal electric field generated between the signal electrodes.

Variable capacitor and electronic device

A lead-free solder composition having superior mechanical strength is produced by adding a rare earth element to a Sn&mdash;Ag alloy or a Sn&mdash;Ag&mdash;Bi&mdash;Cu alloy.

Solder alloy composition

A lead-free solder composition having superior mechanical strength is produced by adding a rare earth element to a Sn&mdash;Ag alloy or a Sn&mdash;Ag&mdash;Bi&mdash;Cu alloy. The rare earth element is Sm, Gd, or a mixture of these elements with other rare earth elements.

A method is provided for producing a KTiOPO.sub.4 which is grown at a temperature higher than its Curie temperature using a TSSG method. The grown KTiOPO.sub.4 single crystal is maintained in contact with a melt while the crystal is maintained at a temperature higher than the Curie temperature. A d.c. current is applied in this state across a seed crystal and the melt, while the single crystal is cooled to a temperature lower than the Curie temperature. The value of current density D, defined by the formula D=Ip/(a+b), where Ip is the impressed current and a, b are crystal sizes along a and b axes, respectively, is selected to be 0.01 mA/cm.sup.2 .ltoreq.D.ltoreq.1.0 mA/cm.sup.2. In this manner, the produced KTiOPO.sub.4 is processed into a single domain crystal.

Method for producing KTIOPO4 single crystal

An optomagnetic recording medium utilizing both rare earth metals and transition metals in the optomagnetic recording system. From 15 to 35 atomic % of the recording medium on the nonmagnetic base consists of one of the rare earth metals gadolinium (Gd), terbium (Tb) or dysprosium (Dy) with the balance being an alloyed mixture of iron (Fe), cobalt (Co) and germanium (Ge). The optomagnetic recording material of the present invention has an increased phase transition temperature without a rise in its Curie point, and provides satisfactory recording and erasing under temperature conditions up to near the Curie point.

Growing community of inventors

Tokyo, Japan

Kazutaka Habu