Kabushiki Kaisha Toshiba

Kazutaka Akiyama

Yukihiro Ushiku

Junji Sugamoto

Masahiro Sekiguchi

Shoichi Harakawa

Chiaki Takubo

Kazumasa Tanida

Mie Matsuo

Ikuko Inoue

Tsutomu Tanaka

Hitoshi Sugiyama

Itsuko Sakai

Atsuko Kawasaki

Tatsumi Maeda

Atsuko Yamashita

Susumu Harada

Minoru Hashimoto

Masayuki Dohi

Takaya Matsushita

Kenichiro Hagiwara

Akihiro Hori

Takuto Inoue

Yoshiteru Koseki

Masahiro Fukasawa

Kazuhiko Nakadate

Koushi Tozuka

Hiroki Neko

According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the first main surface, a through electrode in the through hole, and a connection structure including a connection portion to directly connect the pad and the through electrode, and another connection portion to indirectly connect the pad and the through electrode. The method includes forming an isolation region in the first main surface, the isolation region being in a region where the through electrode is to be formed and being in a region other than the region where the through hole is to be formed, forming the pad, and forming the through hole by processing the substrate to expose a part of the pad.

Semiconductor device and manufacturing method thereof

A semiconductor device according to one embodiment includes: a semiconductor substrate; an element isolation insulating film embedded in the vicinity of a front surface of the semiconductor substrate; a through plug penetrating the semiconductor substrate from a back surface to the front surface so as to penetrate through the element isolation insulating film, and having a multi-stage structure comprising an upper stage portion and a lower stage portion, the upper stage portion having a region surrounded by the element isolation insulating film in the semiconductor substrate, the lower stage portion having a diameter larger than that of the upper stage portion; and a contact plug connected to an end portion of the through plug on the frond surface side of the semiconductor substrate for connecting a conductive member formed above the front surface side of the semiconductor substrate to the through plug.

Semiconductor device and method of fabricating the same

Disclosed is a semiconductor device that includes: a semiconductor substrate; a first insulating film formed above the semiconductor substrate and having a relative dielectric constant of 3.8 or less; a conductor which covers a side face of the first insulating film at least near four corners of the semiconductor substrate, and at least an outer side face of which has a conductive barrier layer; and a second insulating film covering the outer side face of the conductor and having a relative dielectric constant of over 3.8. Also disclosed is a semiconductor device that includes: a conductor covering a side face of the first insulating film at least near four corners of the semiconductor substrate; and a corrosion resistant conductor formed at least near the four corners of the semiconductor substrate to extend from directly under the second insulating film to directly under the conductor.

Semiconductor device and semiconductor device manufacturing method

A semiconductor device is provided with a conductor wire and a fuse wire formed in an insulating film over a semiconductor substrate, a first under-pad-wire insulating film formed above the insulating film, a second under-pad-wire insulating film formed on the first under-pad-wire insulating film, a pad wire formed in an area above the conductive wire, in the first and second under-pad-wire insulating films and an opening formed by leaving a part of the first under-pad-wire insulating film in an area above the fuse wire, in the first and second under-pad-wire insulating films, wherein the second under-pad-wire insulating film comprises an element different from that of the first under-pad-wire insulating film.

Semiconductor device and method of manufacturing the semiconductor device

The present invention provides a semiconductor device having a low-k film including an interconnect layer and a highly-reliable through-substrate contact plug. The semiconductor device includes:

Semiconductor device and method for manufacturing the same

A solid state imaging device includes: an imaging device substrate with an imaging device section formed on a first major surface side thereof; a backside interconnect electrode provided on a second major surface side of the imaging device substrate and electrically connected to the imaging device section, the second major surface being on the opposite side of the first major surface; a circuit substrate provided with a circuit substrate electrode opposed to the second major surface; a connecting portion electrically connecting the backside interconnect electrode to the circuit substrate electrode; and a light shielding layer provided coplanar with the backside interconnect electrode or on the circuit substrate side of the backside interconnect electrode.

Solid state imaging device and method for manufacturing same, and solid state imaging module

A process control system includes a client computer which prepares a correlation between a reference monitored value of apparatus information and a feature quantity, a manufacturing execution system which prepares a processing recipe describing, as a first setting value in an actual manufacturing process, a value of the control parameter, an apparatus information collection section which collects an objective monitored value of the apparatus information in operation of the actual manufacturing process with the first setting value, a feature quantity calculation section which calculates a value of a feature quantity corresponding to the objective monitored value based on the correlation, a parameter calculation section which calculates a second setting value in the actual manufacturing process on the basis of the value of the feature quantity, and an apparatus control unit which changes the processing recipe with the second setting value being as a setting value of the second step.

Process control system, process control method, and method of manufacturing electronic apparatus

A first conductive layer and a second conductive layer are formed on an upper surface of a semiconductor substrate. The second conductive layer formed at a higher location than the first conductive layer. An insulating film is formed over the semiconductor substrate to cover the first conductive layer and the second conductive layer. An interlayer insulator has a structure of at least two layers including a first layered film composed of an organic insulating material and a second layered film composed of an inorganic insulating material and formed on the first layered film. The interlayer insulator is formed covering the first conductive layer and the second conductive layer.

Semiconductor device and method of manufacturing thereof

An insulation film is formed on a semiconductor substrate. A stopper film, which has a large etching selectivity relative to the insulation film and has a first film thickness, is formed on the insulation film. A first mask material, which has a second film thickness that is less than the first film thickness, is formed on the stopper film. A first mask is formed by patterning the first mask material. An opening portion is formed by etching the stopper film using the first mask. The opening portion is filled with a second mask material. A second mask of the second mask material is formed by removing the stopper film. The insulation film is etched using the second mask.

Fine patterning method for semiconductor device

A semiconductor device includes: a semiconductor substrate; a first wiring formed above the semiconductor substrate with a first insulating film interposed therebetween; an MIM capacitor formed above the first insulating film; a second insulating film formed to cover the MIM capacitor; a second wiring formed on the second insulating film; and a guard ring buried in the second insulating film to surround the MIM capacitor.

Semiconductor device including a MIM capacitor

There is disclosed a semiconductor device comprising a first wire and a pad portion thereof provided in a portion from an upper surface to an inner portion of a first insulation film provided above a substrate, a second insulation film provided on the first insulation film and the first wire, a second wire provided to be exposed from an upper surface of the second insulation film in an upper portion of the pad portion of the first wire, and a contact plug provided to reach an inner portion of the pad portion of the first wire from an undersurface of the second wire.

A semiconductor device includes a semiconductor substrate, an insulative film formed above the semiconductor substrate, the film having a first groove and a second groove greater in width than the first groove, a wiring lead buried in the first groove of the insulative film to have a substantially flat surface, and a capacitor buried in the second groove of the insulative film to have a substantially flat surface, the capacitor having a multilayer structure including a first conductive film identical in material to the lead, a capacitor dielectric film, and a second conductive film.

Semiconductor device having a buried wiring lead structure

A magnetic recording medium is disclosed, which has a magnetic layer containing a hexagonal ferrite powder dispersed in a resin binder, the magnetic layer being formed on a nonmagnetic supporting substrate, wherein the hexagonal ferrite powder is a compound represented by the following chemical formula

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Matsudo, Japan

Kazutaka Akiyama