Seiko Epson Corporation

Seiko Epson Corporaition

Kazushige Umetsu

Jun Amako

Shinichi Yotsuya

Haruki Ito

Daisuke Sawaki

Katsuji Arakawa

Yohei Kurashima

Nobuaki Hashimoto

Terunao Hanaoka

Akihiro Murata

Kazunori Sakurai

Yutaka Yamazaki

Kenji Wada

Fumiaki Matsushima

Kenichi Honda

Eimatsu Sakagami

Yoshinao Miyata

Masato Shimada

Tsukasa Funasaka

Hideo Tanaya

Shuhei Yamada

Kazuto Yoshimura

Katsumi Suzuki

Fumitaka Kitamura

Wataru Takahashi

Itaru Nagai

Hitoshi Nakao

Kazunori Kiwada

A method for dividing a wafer into a plurality of chips is provided. The method includes providing recesses in a surface of the wafer at positions along boundaries between regions to become the individual chips, providing fragile portions having a predetermined width inside the wafer at positions along the boundaries by irradiation of the other surface of the wafer with a laser beam whose condensing point is placed inside the wafer, the fragile portions including connected portions at least at one of the surfaces of the wafer, and dividing the wafer at the fragile portions into the individual chips by applying an external force to the wafer.

Method for dividing wafer, method for manufacturing silicon devices, and method for manufacturing liquid ejecting heads

A mask, which is used to form predetermined patterns on a substrate, includes a pattern forming member that is provided with openings corresponding to the predetermined patterns; and a pattern holding member that overlaps one surface of the pattern forming member.

Mask, mask forming method, pattern forming method, and wiring pattern forming method

A laser processing apparatus is provided including: a laser generator generating a light beam; a branching means for branching out the light beam to a plurality of beams arranged at equal intervals; a shifting means for shifting the plurality of beams at a pitch equal to a multiple of natural number of the arranged intervals relatively over a target; and a control means for controlling the intensity of the beam synchronously with the shifting pitch of the plurality of beams.

Laser processing apparatus and laser processing method

By applying a laser beam that is absorbed into a quartz crystal to an upper right end of a crystal chip, the height of the crystal chip is altered step by step to form a first step, a second step, a third step, and a fourth step, respectively. As such, control of the shape of a quartz crystal resonator is easy even if the quartz crystal resonator is miniaturized, the shape and the performance of a processed quartz crystal resonator are satisfactory, quartz crystal resonators of various shapes can be formed, a quartz crystal resonator can be formed at low cost with a small number of man-hours, a load in driving a quartz crystal resonator is small, and versatile equipment and tools can be used.

Manufacturing method of quartz crystal resonator, apparatus therefor, and quartz crystal resonator manufactured thereby

A method of machining a substrate etches a substrate according to a predetermined length and depth from an intersection between a first predetermined dividing line and a second predetermined dividing line, which cross each other in a T-shaped line, along the second predetermined dividing line of the predetermined dividing lines being used to cut the substrate, and divides the substrate along the predetermined dividing lines which are not etched by laser machining.

Method of machining substrate and method of manufacturing element

An object of the present invention is to provide a method for repairing light point defects in which light points can be converted to black spots through a simple process without affecting surrounding pixels, and the repaired pixels can be maintained without their returning to light points even with the passage of time. The present invention provides a method for repairing light point defect pixels of a liquid crystal display device having a liquid crystal panel which comprises a pair of substrates, a liquid crystal layer interposed between the pair of substrates, and a pair of alignment films each of which is provided between the substrate and the liquid crystal layer restraining the orientation of the liquid crystals of the liquid crystal layer. The defect repair method includes the step of irradiating laser light onto a region of the alignment film corresponding to the light point defect pixels to locally reduce or eliminate the orientation restraining force of the alignment film, wherein the light point defect pixels are repaired by reducing the intensity of the light transmitted through the region where the orientation restraining force is reduced or eliminated when the liquid crystal is illuminated.

Method for repair of liquid crystal display device light point defects using detection of corrective laser light in real time

A method of manufacturing a crystal device includes applying substantially simultaneously a first light that is absorbed by a crystal plate and excites an energy level of a substance constituting the crystal plate from a ground state to a first excited state, and a second light that excites the energy level of the substance constituting the crystal plate from the first excited state to a second excited state to generate an ablation, thereby forming one or more grooves in a predetermined pattern on the crystal plate.

Method for manufacturing a crystal device

A method for manufacturing a piezoelectric resonator is provided including: forming a resonator element having a plate-like base and a plurality of arms extending laterally from the base on a substrate made of crystal; emitting laser light for irradiating one surface and the other surface of the arms with laser light and for removing a region irradiated with the laser light, so as to form a groove having a predetermined cross sectional shape perpendicular to the longitudinal direction of the groove; forming a driving electrode on the resonator element.

Method for manufacturing a piezoelectric resonator

A plurality of penetrating holes are formed in a substrate, each of the penetrating holes connecting a first opening and a second opening larger than the first opening. An etching resistant film is formed on a first surface of the substrate avoiding areas in which the first openings will be formed, part of the second surface in which the penetrating holes are formed being exposed so as to expose areas each of which includes two or more of the second openings. Small holes are formed in the formation regions for each of the penetrating holes. Etching having crystal orientation dependence is performed from both the first and second surfaces of the substrate.

Mask and method of manufacturing the same, electroluminescent device and method of manufacturing the same, and electronic instrument

The present invention provides a technique enabling the amount of time required to evaluate the light fastness of a liquid crystal panel to be shortened. A method of testing the light fastness of a liquid crystal panel comprising a pair of substrates and a liquid crystal layer interposed between the substrates comprises the steps of: irradiating a test subject area of the liquid crystal panel with a laser beam, with at least one of the wavelength, the irradiation energy, and the irradiation duration of the laser beam set as a variable parameter; irradiating the liquid crystal panel with an observation beam and detecting the condition of the observation beam after passing through the liquid crystal panel; and evaluating the light fastness of the liquid crystal panel on the basis of a difference in the condition of the observation beam corresponding to the setting of the variable parameter of the laser beam.

Testing method and testing apparatus for liquid crystal panel

An apparatus for cutting an electrical wiring line includes a laser generator for generating a laser beam, an optical beam branching element for branching a laser beam generated by the laser generator into a plurality of branch beams, and a condenser element for condensing the branch beams branched by the optical beam branching element (the optical beam branching element can also serve as the condenser element). The condenser element may be a condenser lens which is separate from the optical beam branching element. The power and the focal depth of the branch beam may be adjusted. When the substrate has a transparency to the laser beam, the branch beam is directed to the electrical wiring line formed on the substrate from the opposite side to the surface having the electrical wiring line.

Method and apparatus for cutting electrical wiring line on a substrate, and method and apparatus for manufacturing electronic device

A method of laser processing for processing a laminated member where a metal thin film is protruded from an end portion of a silicon substrate at the bottom of the silicon substrate, wherein; a laser beam of which wavelength has the light absorption coefficient of the metal thin film being higher than the light absorption coefficient of the silicon substrate, is irradiated onto an boundary between an end of the silicon substrate and the metal thin film so as to cut the metal thin film.

Method of laser processing and head for ejecting droplet

An optical module comprising: an optical fiber; an optical element having an optical section and with a fixed position relative to the optical fiber; and a semiconductor chip electrically connected to the optical element, and the optical element and semiconductor chip being packaged. A hole is formed in the semiconductor chip, and the optical element is mounted on the semiconductor chip with the optical section facing the hole, and the optical fiber is inserted in the hole and fitted to the semiconductor chip.

Optical module and method of manufacture thereof, semiconductor device, and optical transmission device

A method of manufacturing a semiconductor device comprises a step of forming a through-hole in a semiconductor chip having an electrode and forming a conductive layer on a region comprising an inner side of the through-hole. An intermediate portion of the through-hole is formed to be larger than an edge portion thereof, and the conductive layer is formed by electroless plating.

Semiconductor device and manufacturing method therefor, circuit board, and electronic equipment

A conductive material is provided to an open end of a penetrating hole penetrating through at least a semiconductor element, on the side of a first surface of the semiconductor element. The conductive material is melted to flow into the penetrating hole. The conductive material is made to flow into the penetrating hole in a state that an atmospheric pressure on the side of a second surface of the semiconductor element opposite to the first surface is lower than an atmospheric pressure on the side of the first surface.

Growing community of inventors

Chino, Japan

Kazushige Umetsu